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Silicon Sulfide Sputtering Target

CAS #: 13759-10-9
Linear Formula:
SiS2
MDL Number
N/A
EC No.:
237-344-8

ORDER

Product Product Code ORDER SAFETY DATA Technical data
(2N) 99% Silicon Sulfide SI-S-02 SDS > Data Sheet >
(3N) 99.9% Silicon Sulfide SI-S-03 SDS > Data Sheet >
(4N) 99.99% Silicon Sulfide SI-S-04 SDS > Data Sheet >
(5N) 99.999% Silicon Sulfide SI-S-05 SDS > Data Sheet >
WHOLESALE/SKU 0000-742-{{nid}}

Silicon Sulfide Sputtering Target Properties (Theoretical)

Compound Formula SiS2
Molecular Weight 92.22
Appearance White Target
Melting Point 1,090° C (1,994° F)
Boiling Point N/A
Density 1.85 g/cm3
Solubility in H2O N/A
Exact Mass 91.921068
Monoisotopic Mass 91.921066 Da

Silicon Sulfide Sputtering Target Health & Safety Information

Signal Word N/A
Hazard Statements N/A
Hazard Codes N/A
Risk Codes N/A
Safety Statements N/A
Transport Information N/A
GHS Pictogram
Image
Flammable - GHS02
,
Image
Skull and Crossbones - GHS06

About Silicon Sulfide Sputtering Target

American Elements specializes in producing high purity Silicon Sulfide Sputtering Targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devises as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. We can also provide targets outside this range in addition to just about any size rectangular, annular, or oval target. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. Typical and custom packaging is available. Other shapes are available by request.

Synonyms

Silicon disulfide, dithioxosilane, bis(sulfanylidene)silane, Silicon disulphide, dithioxo-$l6-silane, Silicon sulfide (SiS2), silane, dithioxo-

Chemical Identifiers

Linear Formula SiS2
Pubchem CID 83705
MDL Number N/A
EC No. 237-344-8
IUPAC Name bis(sulfanylidene)silane
Beilstein/Reaxys No. N/A
SMILES S=[Si]=S
InchI Identifier S=[Si]=S
InchI Key KHDSWONFYIAAPE-UHFFFAOYSA-N
Chemical Formula
Molecular Weight
Standard InchI
Appearance
Melting Point
Boiling Point
Density

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Related Elements

See more Silicon products. Silicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Elemental SiliconSilica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone.

See more Sulfur products. Sulfur (or Sulphur) (atomic symbol: S, atomic number: 16) is a Block P, Group 16, Period 3 element with an atomic radius of 32.066. Sulfur Bohr ModelThe number of electrons in each of Sulfur's shells is 2, 8, 6 and its electron configuration is [Ne] 3s2 3p4. In its elemental form, sulfur has a light yellow appearance. The sulfur atom has a covalent radius of 105 pm and a Van der Waals radius of 180 pm. In nature, sulfur can be found in hot springs, meteorites, volcanoes, and as galena, gypsum, and epsom salts. Sulfur has been known since ancient times but was not accepted as an element until 1777, when Antoine Lavoisier helped to convince the scientific community that it was an element and not a compound.