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Silicon Telluride Sputtering Target

CAS #: 12067-53-7
Linear Formula:
SiTe
MDL Number
N/A
EC No.:
N/A

ORDER

Product Product Code ORDER SAFETY DATA Technical data
(2N) 99% Silicon Telluride Sputtering Target SI-TE-02-ST SDS > Data Sheet >
(2N5) 99.5% Silicon Telluride Sputtering Target SI-TE-025-ST SDS > Data Sheet >
(3N) 99.9% Silicon Telluride Sputtering Target SI-TE-03-ST SDS > Data Sheet >
(3N5) 99.95% Silicon Telluride Sputtering Target SI-TE-035-ST SDS > Data Sheet >
(4N) 99.99% Silicon Telluride Sputtering Target SI-TE-04-ST SDS > Data Sheet >
(5N) 99.999% Silicon Telluride Sputtering Target SI-TE-05-ST SDS > Data Sheet >
WHOLESALE/SKU 0000-742-5142

Silicon Telluride Sputtering Target Properties (Theoretical)

Compound Formula SiTe
Molecular Weight 155.68
Appearance solid
Melting Point N/A
Boiling Point N/A
Density N/A
Solubility in H2O N/A
Exact Mass 161.914 g/mol
Monoisotopic Mass 161.914 g/mol

Silicon Telluride Sputtering Target Health & Safety Information

Signal Word N/A
Hazard Statements N/A
Hazard Codes N/A
Risk Codes N/A
Safety Statements N/A
Transport Information N/A

About Silicon Telluride Sputtering Target

Telluride IonAmerican Elements specializes in producing high purity Silicon Telluride Sputtering targets with the highest possible density High Purity (99.99%) Metallic Sputtering Targetand smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. We offer all shapes and configurations of targets compatible with all standard guns including circular, rectangular, annular, oval, "dog-bone," rotatable (rotary), multi-tiled and others in standard, custom, and research sized dimensions. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar, or plate form, as well as other machined shapes. We also produce Silicon as disc, granules, ingot, pellets, pieces, powder, and rod. Other shapes are available by request.

Chemical Identifiers

Linear Formula SiTe
Pubchem CID 139229
MDL Number N/A
EC No. N/A
IUPAC Name Tellanylsilane
Beilstein/Reaxys No. N/A
SMILES [SiH3][TeH]
InchI Identifier InChI=1S/H4SiTe/c1-2/h2H,1H3
InchI Key DCDONASXPYTWRS-UHFFFAOYSA-N
Chemical Formula
Molecular Weight
Standard InchI
Appearance
Melting Point
Boiling Point
Density

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Related Elements

See more Silicon products. Silicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Elemental SiliconSilica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone.

See more Tellurium products. Tellurium (atomic symbol: Te, atomic number: 52) is a Block P, Group 16, Period 5 element with an atomic radius of 127.60. Tellurium Bohr ModelThe number of electrons in each of tellurium's shells is 2, 8, 18, 18, 6 and its electron configuration is [Kr] 4d10 5s2 5p4. Tellurium was discovered by Franz Muller von Reichenstein in 1782 and first isolated by Martin Heinrich Klaproth in 1798. In its elemental form, tellurium has a silvery lustrous gray appearance. The tellurium atom has a radius of 140 pm and a Van der Waals radius of 206 pm. Elemental TelluriumTellurium is most commonly sourced from the anode sludges produced as a byproduct of copper refining. The name Tellurium originates from the Greek word Tellus, meaning Earth.