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Silicon Powder

High Purity Si Powder
CAS 7440-21-3


Product Product Code Request Quote
(2N) 99% Silicon Powder SI-M-02-P Request Quote
(3N) 99.9% Silicon Powder SI-M-03-P Request Quote
(4N) 99.99% Silicon Powder SI-M-04-P Request Quote
(5N) 99.999% Silicon Powder SI-M-05-P Request Quote

CHEMICAL
IDENTIFIER
Formula CAS No. PubChem SID PubChem CID MDL No. EC No Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
Si 7440-21-3 24882537 5461123 MFCD00085311 231-130-8 N/A [SiH4] InChI=1S/Si XUIMIQQOPSSXEZ-UHFFFAOYSA-N

PROPERTIES Mol. Wt. Appearance Density Tensile Strength Melting Point Boiling Point Thermal Conductivity Electrical Resistivity Eletronegativity Specific Heat Heat of Vaporization Heat of Fusion MSDS
28.08 Silvery 2330 kg/m³ N/A 1414 °C 2900 °C 1.49 W/cm/K @ 298.2 K 3-4 microhm-cm @ 0°C 1.8 Paulings 0.168 Cal/g/K @ 25°C 40.6 K-Cal/gm atom at 2355 °C 9.47 Cal/gm mole Safety Data Sheet

Ultra High Purity Metal PowdersAmerican Elements specializes in producing high purity Silicon Powder with the smallest possible average grain sizes for use in preparation of pressed and bonded sputtering targets and in Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Powders are also useful in any application where high surface areas are desired such as water treatment and in fuel cell and solar applications. Nanoparticles () also produce very high surface areas. Our standard Powder particle sizes average in the range of - 325 mesh, - 100 mesh, 10-50 microns and submicron (< 1 micron). We can also provide many materials in the nanoscale range. See safety data and research below and pricing/lead time above. We also produce Silicon as rod, ingot, pieces, pellets, disc, granules, wire, and in compound forms, such as oxide. Other shapes are available by request.

Silicon (Si) atomic and molecular weight, atomic number and elemental symbolSilicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Elemental Silicon Silica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone. For more information on silicon, including properties, safety data, research, and American Elements' catalog of silicon products, visit the Silicon element page.


HEALTH, SAFETY & TRANSPORTATION INFORMATION
Material Safety Data Sheet MSDS
Signal Word Warning
Hazard Statements H228
Hazard Codes F
Risk Codes 11
Safety Precautions 16-33-36
RTECS Number VW0400000
Transport Information UN 1346 4.1/PG 3
WGK Germany 2
Globally Harmonized System of
Classification and Labelling (GHS)
Flame-Flammables        

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Show Me MORE Forms of Silicon

PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


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Request an MSDS or Certificate of Analysis

Recent Research & Development for Silicon

  • 3D hierarchical assembly of ultrathin MnO2 nanoflakes on silicon nanowires for high performance micro-supercapacitors in Li- doped ionic liquid.. Dubal DP, Aradilla D, Bidan G, Gentile P, Schubert TJ, Wimberg J, Sadki S, Gomez-Romero P.. Sci Rep. 2015 May 18
  • Stabilization of elusive silicon oxides.. Wang Y, Chen M, Xie Y, Wei P, Schaefer HF 3rd, Schleyer Pv, Robinson GH.. Nat Chem. 2015 Jun
  • Main group chemistry: Small silicon oxides isolated.. Apeloig Y.. Nat Chem. 2015 May 20
  • Phonon Engineering in Isotopically Disordered Silicon Nanowires.. Mukherjee S, Givan U, Senz S, Bergeron A, Francoeur S, de la Mata M, Arbiol J, Sekiguchi T, Itoh KM, Isheim D, Seidman DN, Moutanabbir O.. Nano Lett. 2015 May 20.
  • Lithiation of Silicon Nanoparticles Confined in Carbon Nanotubes. Yu WJ, Liu C, Hou PX, Zhang L, Shan XY, Li F, Cheng HM. ACS Nano. 2015 Apr 13. : ACS Nano
  • Origins of conductivity improvement in fluoride-enhanced silicon doping of ZnO films. Rashidi N, Vai AT, Kuznetsov VL, Dilworth JR, Edwards PP. Chem Commun (Camb). 2015 Apr 16. : Chem Commun (Camb)
  • The photodynamic antibacterial effects of silicon phthalocyanine (pc) 4. Dimaano ML, Rozario C, Nerandzic MM, Donskey CJ, Lam M, Baron ED. Int J Mol Sci. 2015 Apr 8: Int J Mol Sci
  • Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition. Jia E, Zhou C, Wang W. Nanoscale Res Lett. 2015 Mar 13: Nanoscale Res Lett
  • High-Speed GaN/GaInN nanowire array LED on Silicon (111). Köster R, Sager D, Quitsch WA, Pfingsten O, Poloczek A, Blumenthal S, Keller G, Prost W, Bacher G, Tegude FJ. Nano Lett. 2015 Mar 10.
  • Carbon p Electron Ferromagnetism in Silicon Carbide. Wang Y, Liu Y, Wang G, Anwand W, Jenkins CA, Arenholz E, Munnik F, Gordan OD, Salvan G, Zahn DR, Chen X, Gemming S, Helm M, Zhou S. Sci Rep. 2015 Mar 11
  • Complete magnesiothermic reduction reaction of vertically aligned mesoporous silica channels to form pure silicon nanoparticles. Kim KH, Lee DJ, Cho KM, Kim SJ, Park JK, Jung HT. Sci Rep. 2015 Mar 11