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Tetraethylorthosilicate

CAS #:

Linear Formula:

S(OC2H5)4

MDL Number:

MFCD00009062

EC No.:

201-083-8

ORDER

PRODUCT Product Code ORDER SAFETY DATA TECHNICAL DATA
(2N) 99% Tetraethylorthosilicate
SI-OMX-02
Pricing > SDS > Data Sheet >
(2N5) 99.5% Tetraethylorthosilicate
SI-OMX-025
Pricing > SDS > Data Sheet >
(3N) 99.9% Tetraethylorthosilicate
SI-OMX-03
Pricing > SDS > Data Sheet >
(3N5) 99.95% Tetraethylorthosilicate
SI-OMX-035
Pricing > SDS > Data Sheet >
(4N) 99.99% Tetraethylorthosilicate
SI-OMX-04
Pricing > SDS > Data Sheet >
(5N) 99.999% Tetraethylorthosilicate
SI-OMX-05
Pricing > SDS > Data Sheet >
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Tetraethylorthosilicate Properties

Compound Formula

C8H20O4Si

Molecular Weight

208.33

Appearance

Colorless Liquid

Melting Point

N/A

Boiling Point

168 °C

Density (Theoretical)

0.933 g/mL at 20 °C

Exact Mass

N/A

Monoisotopic Mass

208.113083

Charge

N/A

Tetraethylorthosilicate Health & Safety Information

Signal Word Warning
Hazard Statements H226-H319-H332-H335
Hazard Codes Xn
Risk Codes 10-20-36/37
Safety Statements N/A
RTECS Number VV9450000
Transport Information UN 1292 3/PG 3
WGK Germany 1
MSDS / SDS

About Tetraethylorthosilicate

Tetraethylorthosilicate is one of numerous organo-metallic compounds sold by American Elements under the trade name AE Organo-Metallics™ for uses requiring non-aqueous solubility such as recent solar energy and water treatment applications. Similar results can sometimes also be achieved with Nanoparticles and by thin film deposition. Note American Elements additionally supplies many materials as solutions. Tetraethylorthosilicate is generally immediately available in most volumes. High purity, submicron and nanopowder forms may be considered. Additional technical, research and safety information is available.

Tetraethylorthosilicate Synonyms

Tetraethyl orthosilicate, Tetraethyl silicate, Silicon ethoxide, TEOS, ETHYL SILICATE, Dynasil A, Silicic acid (H4SiO4), tetraethyl ester

Tetraethylorthosilicate Chemical Identifiers

Linear Formula

S(OC2H5)4

Pubchem CID

6517

MDL Number

MFCD00009062

EC No.

201-083-8

Beilstein Registry No.

1422225

IUPAC Name

tetraethylsilicate

SMILES

CCO[Si](OCC)(OCC)OCC

InchI Identifier

InChI=1S/C8H20O4Si/c1-5-9-13(10-6-2,11-7-3)12-8-4/h5-8H2,1-4H3

InchI Key

BOTDANWDWHJENH-UHFFFAOYSA-N

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Related Elements

See more Silicon products. Silicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Elemental SiliconSilica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone.

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November 21, 2017
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