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Titanium Silicon Sputtering Target

Linear Formula:

Ti-Si

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ORDER

PRODUCT	Product Code	ORDER	SAFETY DATA	TECHNICAL DATA
(2N) 99% Titanium Silicon Sputtering Target	TI-SI-02-ST	Pricing >	SDS >	Data Sheet >
(2N5) 99.5% Titanium Silicon Sputtering Target	TI-SI-025-ST	Pricing >	SDS >	Data Sheet >
(3N) 99.9% Titanium Silicon Sputtering Target	TI-SI-03-ST	Pricing >	SDS >	Data Sheet >
(3N5) 99.95% Titanium Silicon Sputtering Target	TI-SI-035-ST	Pricing >	SDS >	Data Sheet >
(4N) 99.99% Titanium Silicon Sputtering Target	TI-SI-04-ST	Pricing >	SDS >	Data Sheet >
(5N) 99.999% Titanium Silicon Sputtering Target	TI-SI-05-ST	Pricing >	SDS >	Data Sheet >

Question? Ask an American Elements Materials Science Engineer

Titanium Silicon Sputtering Target Properties (Theoretical)

Appearance	Target
Melting Point	N/A
Boiling Point	N/A
Density	N/A
Solubility in H2O	N/A

Titanium Silicon Sputtering Target Health & Safety Information

Signal Word	N/A
Hazard Statements	N/A
Hazard Codes	N/A
RTECS Number	N/A
Transport Information	N/A
MSDS / SDS	Request MSDS / SDS

About Titanium Silicon Sputtering Target

American Elements specializes in producing high purity Titanium Silicon Sputtering targets with the highest possible density

High Purity (99.99%) Metallic Sputtering Target

and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. We offer all shapes and configurations of targets compatible with all standard guns including circular, rectangular, annular, oval, "dog-bone," rotatable (rotary), multi-tiled and others in standard, custom, and research sized dimensions. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar, or plate form, as well as other machined shapes. We also produce Titanium as rods, powder and plates. Other shapes are available by request.

Titanium Silicon Sputtering Target Synonyms

N/A

Chemical Identifiers

Linear Formula	Ti-Si
MDL Number	N/A
EC No.	N/A

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Manganese Silicon Vanadium Sputtering Target	Ruthenium Silicon Alloy Sputtering Target	Titanium Silicon Carbide Sputtering Target

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Payment Methods

American Elements accepts checks, wire transfers, ACH, most major credit and debit cards (Visa, MasterCard, AMEX, Discover) and Paypal.

For the convenience of our international customers, American Elements offers the following additional payment methods:

SOFORT bank tranfer payment for Austria, Belgium, Germany and SwitzerlandJCB cards for Japan and WorldwideBoleto Bancario for BraziliDeal payments for the Netherlands, Germany, Austria, Belgium, Italy, Poland, Spain, Switzerland, and the United KingdomGiroPay for GermanyDankort cards for DenmarkElo cards for BrazileNETS for SingaporeCartaSi for ItalyCarte-Bleue cards for FranceChina UnionPayHipercard cards for BrazilTROY cards for TurkeyBC cards for South KoreaRuPay for India

Related Elements

Titanium

22 Ti 47.867000000 Titanium

See more Titanium products. Titanium (atomic symbol: Ti, atomic number: 22) is a Block D, Group 4, Period 4 element with an atomic weight of 47.867. The number of electrons in each of Titanium's shells is [2, 8, 10, 2] and its electron configuration is [Ar] 3d² 4s². Titanium Bohr Model The titanium atom has a radius of 147 pm and a Van der Waals radius of 187 pm. Titanium was discovered by William Gregor in 1791 and first isolated by Jöns Jakob Berzelius in 1825. In its elemental form, titanium has a silvery grey-white metallic appearance. Titanium's properties are chemically and physically similar to zirconium, both of which have the same number of valence electrons and are in the same group in the periodic table. Elemental Titanium Titanium has five naturally occurring isotopes: ⁴⁶Ti through ⁵⁰Ti, with ⁴⁸Ti being the most abundant (73.8%). Titanium is found in igneous rocks and the sediments derived from them. It is named after the word Titanos, which is Greek for Titans.

Silicon

14 Si 28.085500000 Silicon

See more Silicon products. Silicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr Molecule The number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s² 3p². The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Elemental Silicon Silica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone.