Tungsten Silicide Sputtering Target

CAS #:

Linear Formula:

W5Si3

MDL Number:

N/A

EC No.:

234-912-7

ORDER

PRODUCT Product Code ORDER SAFETY DATA TECHNICAL DATA
(2N) 99% Tungsten Silicide W5Si3 Sputtering Target
W-SID-02-ST
Pricing > SDS > Data Sheet >
(2N5) 99.5% Tungsten Silicide W5Si3 Sputtering Target
W-SID-025-ST
Pricing > SDS > Data Sheet >
(3N) 99.9% Tungsten Silicide W5Si3 Sputtering Target
W-SID-03-ST
Pricing > SDS > Data Sheet >
(3N5) 99.95% Tungsten Silicide W5Si3 Sputtering Target
W-SID-035-ST
Pricing > SDS > Data Sheet >
(4N) 99.99% Tungsten Silicide W5Si3 Sputtering Target
W-SID-04-ST
Pricing > SDS > Data Sheet >
(5N) 99.999% Tungsten Silicide W5Si3 Sputtering Target
W-SID-05-ST
Pricing > SDS > Data Sheet >

Tungsten Silicide Sputtering Target Properties (Theoretical)

Compound Formula Si3W5
Molecular Weight 1003.46
Appearance Gray crystalline solid
Melting Point N/A
Boiling Point N/A
Density N/A
Solubility in H2O N/A
Exact Mass 1002.685437
Monoisotopic Mass 1003.685443

Tungsten Silicide Sputtering Target Health & Safety Information

Signal Word N/A
Hazard Statements N/A
Hazard Codes N/A
RTECS Number N/A
Transport Information N/A
MSDS / SDS

About Tungsten Silicide Sputtering Target

American Elements specializes in producing high purity Tungsten Silicide Sputtering Targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devises as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. We can also provide targets outside this range in addition to just about any size rectangular, annular, or oval target. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. Typical and custom packaging is available. Other shapes are available by request.

Tungsten Silicide Sputtering Target Synonyms

Pentatungsten trisilicide

Chemical Identifiers

Linear Formula W5Si3
MDL Number N/A
EC No. 234-912-7
Beilstein/Reaxys No. N/A
Pubchem CID 6336893
IUPAC Name silicon; tungsten
SMILES [Si].[Si].[Si].[W].[W].[W].[W].[W]
InchI Identifier InChI=1S/3Si.5W
InchI Key HXBCHXQSHJCYFO-UHFFFAOYSA-N

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Payment Methods

American Elements accepts checks, wire transfers, ACH, most major credit and debit cards (Visa, MasterCard, AMEX, Discover) and Paypal.

For the convenience of our international customers, American Elements offers the following additional payment methods:

SOFORT bank tranfer payment for Austria, Belgium, Germany and SwitzerlandJCB cards for Japan and WorldwideBoleto Bancario for BraziliDeal payments for the Netherlands, Germany, Austria, Belgium, Italy, Poland, Spain, Switzerland, and the United KingdomGiroPay for GermanyDankort cards for DenmarkElo cards for BrazileNETS for SingaporeCartaSi for ItalyCarte-Bleue cards for FranceChina UnionPayHipercard cards for BrazilTROY cards for TurkeyBC cards for South KoreaRuPay for India

Related Elements

Silicon

See more Silicon products. Silicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Elemental SiliconSilica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone.

Tungsten

See more Tungsten products. Tungsten (atomic symbol: W, atomic number: 74) is a Block D, Group 6, Period 6 element with an atomic weight of 183.84. The number of electrons in each of tungsten's shells is [2, 8, 18, 32, 12, 2] and its electron configuration is [Xe] 4f14 5d4 6s2. Tungsten Bohr ModelThe tungsten atom has a radius of 139 pm and a Van der Waals radius of 210 pm. Tungsten was discovered by Torbern Bergman in 1781 and first isolated by Juan José Elhuyar and Fausto Elhuyar in 1783. In its elemental form, tungsten has a grayish white, lustrous appearance. Elemental TungstenTungsten has the highest melting point of all the metallic elements and a density comparable to that or uranium or gold and about 1.7 times that of lead. Tungsten alloys are often used to make filaments and targets of x-ray tubes. It is found in the minerals scheelite (CaWO4) and wolframite [(Fe,Mn)WO4]. In reference to its density, Tungsten gets its name from the Swedish words tung and sten, meaning heavy stone.

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