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Gallium (By Crystallization)
Gallium Antimonide (By Crystallization)
Gallium Arsenide (By Crystallization)
Gallium Chloride
Gallium Fluoride
Gallium Indium Antimonide (By Crystallization)
Gallium Indium Arsenide (By Crystallization)
Gallium Nitrate
Gallium Phosphide (By Crystallization)
Gallium Selenide Single Crystal
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Gallium(II) Selenide
Gallium Selenide Sputtering Target
Gallium Sulfate
Gallium Telluride
Gallium(III) Telluride (By Crystallization)
Gallium Tube
Gallium
Gallium information, including Technical Data, Safety Data and its high purity properties, research, applications and other useful facts are discussed below. Scientific facts such as the atomic structure, ionization energy, abundance on Earth, conductivity and thermal properties are included.

Gallium is one of three elements that naturally occur as a liquid at room temperature. The other two are mercury and cesium. The application of gallium that has received the most attention is the production of semiconducting compounds. Of these, the most important are the compounds of gallium with antimony, arsenic or phosphor . Nowadays gallium arsenide (Ga-As) is undoubtedly the most used. This compound is used in the production of several electronic parts such as diodes and transistors, made for voltage rectification, signal amplification, etc. Other gallium arsenide applications are the semiconductor "lasing" and microwave generation and also in sensors to measure temperature, light or magnetic field. Gallium is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder.

Gallium facts, including appearance, CAS #, and molecular formula and safety data, research and properties are

 

  Hydrogen                                 Helium
  Lithium Beryllium                     Boron Carbon Nitrogen Oxygen Fluorine Neon
  Sodium Magnesium                     Aluminum Silicon Phosphorus Sulfur Chlorine Argon
  Potassium Calcium Scandium Titanium Vanadium Chromium Manganese Iron Cobalt Hydrogen Copper Zinc Gallium Germanium Arsenic Selenium Bromine Krypton
  Rubidium Strontium Yttrium Zirconium Niobium Molybdenum Technetium Ruthenium Rhodium Palladium Silver Cadmium Indium Tin Antimony Tellurium Iodine Xenon
  Cesium Barium Cerium Hafnium Tantalum Tungsten Rhenium Osmium Iridium Platinum Gold Mercury Thallium Lead Bismuth Polonium Astatine Radon
                                     
      Cerium Praseodymium Neodymium Promethium Samarium Europium Gadolinium Terbium Dysprosium Holmium Erbium Thulium Ytterbium Lutetium    
      Thorium Protactinium Uranium Neptunium Plutonium Americium Curium Berkelium Californium Einsteinium Fermium Mendelevium Nobelium Lawerencium    


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available for many specific states, forms and shapes on the product pages listed to the left. Elemental or metallic forms include pellets, rod, wire and granules for evaporation source material purposes. Nanoparticles and nanopowders provide ultra high surface area which nanotechnology research and recent experiments demonstrate function to create new and unique properties and benefits.

Oxides are available in forms including powders and dense pellets for such uses as optical coating and thin film applications. Oxides tend to be insoluble. Fluorides are another insoluble form for uses in which oxygen is undesirable such as metallurgy, chemical and physical vapor deposition and in some optical coatings. Gallium is available in soluble forms including chlorides, nitrates and acetates. These compounds are also manufactured as solutions at specified stoichiometries.

Gallium is a Block P, Group 13, Period 4 element. The electronic configuration is [Ar] 3d10 4s2 4p1. In its elemental form gallium's CAS number is 7440-55-3. The gallium atom has a radius of 122.1.pm and it's Van der Waals radius is 187.pm.

All elemental metals, compounds and solutions may be synthesized in ultra high purity (e.g. 99.999%) for laboratory standards, advanced electronic, metallurgy and optical materials and other high technology advantages. Information is provided for stable (non-radioactive) isotopes. Organo-Metallic Gallium compounds are soluble in organic or non-aqueous solvents. See Analytical Services for information on available certified chemical and physical analysis techniques including MS-ICP, X-Ray Diffraction, PSD and Surface Area (BET) analysis.

Gallium was first discovered by Hans Christian Oersted in 1825.

French Gallium German Gallium Italian Gallio Portuguese Gálio Spanish Galio Swedish Gallium

Abundance. The following table shows the abundance of gallium and each of its naturally occurring isotopes on Earth along with the atomic mass for each isotope.

Isotope
Atomic Mass
% Abundance on Earth
Ga-69
68.925581
60.11
Ga-71
70.924705
39.89

Safety Data. The safety data for gallium metal, nanoparticles and its compounds can vary widely depending on the form. For potential hazard information, toxicity, and road, sea and air transportation limitations, such as DOT Hazard Class, DOT Number, EU Number, NFPA Health rating and RTECS Class, please see the specific material or compound referenced in the left margin.

Ionization Energy. The ionization energy for gallium (the least required energy to release a single electron from the atom in it's ground state in the gas phase) is stated in the following table:

1st Ionization Energy
578.85 kJ mol-1
2nd Ionization Energy
1979.33 kJ mol-1
3rd Ionization Energy
2963.09 kJ mol-1

Conductivity. As to gallium's electrical and thermal conductivity, the electrical conductivity measured as to electrical resistivity @ 20 ºC is 17.4 μΩcm and its electronegativities (or its ability to draw electrons relative to other elements) is 1.81. The thermal conductivity of gallium is 40.6 W m-1 K-1.

Thermal Properties. The melting point and boiling point for gallium are stated below. The following chart sets forth the heat of fusion, heat of vaporization and heat of atomization.

Heat of Fusion
5.59 kJ mol-1
Heat of Vaporization
270.3 kJ mol-1
Heat of Atomization
276 kJ mol-1

 
Formula Atomic Number Molecular Weight Electronegativity (Pauling) Density Melting Point
Boiling Point
Vanderwaals radius
Ionic radius Energy of first ionization
Ga 31 69.72 g.mol -1 unknown 5.1 g.cm-3 at 20 °C 29.8 °C 2204 °C 187.pm 0.083 nm (+3) 578.85 kJ.mol-1

PRODUCT CATALOG U.S. Operations Submicron & Nanopowder Tolling Ultra High Purity Sputtering Target Crystal Growth Rod, Plate, Powder, etc. Foil
 
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Recent Research & Development for Gallium

  • Convenient Synthesis of Aluminum and Gallium Phosphonate Cages. Inorg Chem. 2008 Mar 26; [Epub ahead of print]

  • Base free lithium-organoaluminate and the gallium congener: potential precursors to heterometallic assemblies. Chem Commun (Camb). 2007 Dec 14;(46):4934-6.

  • Formation of High-Mass Cluster Ions from Compound Semiconductors Using Time-of-Flight Secondary Ion Mass Spectrometry with Cluster Primary Ions. Anal Chem. 2008 Mar 22; [Epub ahead of print]

  • Detection of an Infected Abdominal Aortic Aneurysm With Three-Phase Bone Scan and Gallium-67 Scan. Clin Nucl Med. 2008 Apr;33(4):305-307.

  • Rapid formation of metal-organic nano-capsules gives new insight into the self-assembly process. Chem Commun (Camb). 2008 Apr 7;(13):1539-41. Epub 2008 Feb 27.

  • Off-axis refractive mass-transported gallium-phosphide microlens array for the reduction of distortion in an optical interconnect system. Appl Opt. 2000 Nov 10;39(32):6028-33.

  • Facile one-pot synthesis of 5-substituted hydantoins. Org Biomol Chem. 2008 Mar 21;6(6):988-91. Epub 2008 Feb 14.

  • Investigation on damage of DNA molecules under irradiation of low frequency ultrasound in the presence of hematoporphyrin-gallium (HP-Ga) complex. Ultrason Sonochem. 2008 Feb 5; [Epub ahead of print]

  • Radionuclide imaging of musculoskeletal infection: conventional agents. Semin Musculoskelet Radiol. 2007 Dec;11(4):335-52.

  • Synthesis and characterization of ZnO and ZnO:Ga films and their application in dye-sensitized solar cells. Dalton Trans. 2008 Mar 21;(11):1487-91. Epub 2008 Feb 12.

  • Spatial-mode control of vertical-cavity lasers with micromirrors fabricated and replicated in semiconductor materials. Appl Opt. 1999 May 10;38(14):3030-8.

  • Mass-transport fabrication of off-axis and prismatic gallium phosphide optics. Appl Opt. 1999 May 10;38(14):2979-85.

  • Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardment.

  • Resistance of planktonic and biofilm-grown Burkholderia cepacia complex isolates to the transition metal gallium. J Antimicrob Chemother. 2008 Feb 26; [Epub ahead of print]

  • Low-level laser therapy modulates cyclo-oxygenase-2 expression during bone repair in rats. Lasers Med Sci. 2008 Feb 29; [Epub ahead of print]

  • Mid-Infrared (5-12-mum) and Limited (5.5-8.5-mum) Single-Knob Tuning Generated by Difference-Frequency Mixing in Single-Crystal AgGaS(2). Appl Opt. 1999 Mar 20;38(9):1798-801.

  • Primary malignant fibrous histiocytoma of the thyroid: review of the literature with two new cases. Thyroid. 2008 Jan;18(1):51-5.

  • [Atypical peritoneal tuberculosis. Use of laparoscopy in the diagnosis] Rev Esp Enferm Dig. 2007 Dec;99(12):725-8. Spanish.

  • Medical treatment of malignancy-associated hypercalcemia. Curr Med Chem. 2008;15(4):415-21.

  • Finite-Element Analysis of Lossy TE-TM modes in Metal-Clad Optical Waveguides. Appl Opt. 1998 Aug 20;37(24):5747-54.

 

 

 

 

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