About Arsenides

Arsenide structure

Arsenides are compounds of one or more metallic elements with arsenic. While many these compounds feature bonds with more covalent than ionic character, the arsenic in these compounds is typically considered to be an anion species, usually assigned the formal charge -3.

Many elements in group II and group III on the periodic table combine with arsenic to produce arsenide semiconductors. Gallium arsenide is the most common of these, and is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells, and optical windows.

Cadmium arsenide can be prepared as amorphous semiconductive glass, used in infrared detectors using Nernst effect, and in thin-film dynamic pressure sensors. It can be also used to make magnetoresistors and in photodetectors. Cadmium arsenide can also be used as a dopant for the semiconductor HgCdTe.

Indium arsenide is used for construction of photodiode infrared detectors and diode lasers.

Recent Research & Development for Arsenides

Significantly enhanced thermal conductivity of indium arsenide nanowires via sulfur passivation., Xiong, Yucheng, Tang Hao, Wang Xiaomeng, Zhao Yang, Fu Qiang, Yang Juekuan, and Xu Dongyan , Sci Rep, 2017 Oct 16, Volume 7, Issue 1, p.13252, (2017)

Delayed Triplet-State Formation through Hybrid Charge Transfer Exciton at Copper Phthalocyanine/GaAs Heterojunction., Lim, Heeseon, Kwon Hyuksang, Kim Sang Kyu, and Kim Jeong Won , J Phys Chem Lett, 2017 Oct 05, Volume 8, Issue 19, p.4763-4768, (2017)

Near-infrared photoluminescence biosensing platform with gold nanorods-over-gallium arsenide nanohorn array., Zhang, Yiming, Jiang Tao, and Tang Longhua , Biosens Bioelectron, 2017 Nov 15, Volume 97, p.278-284, (2017)

Local Orthorhombicity in the Magnetic C_{4} Phase of the Hole-Doped Iron-Arsenide Superconductor Sr_{1-x}Na_{x}Fe_{2}As_{2}., Frandsen, Benjamin A., Taddei Keith M., Yi Ming, Frano Alex, Guguchia Zurab, Yu Rong, Si Qimiao, Bugaris Daniel E., Stadel Ryan, Osborn Raymond, et al. , Phys Rev Lett, 2017 Nov 03, Volume 119, Issue 18, p.187001, (2017)

Electrically-Pumped Wavelength-Tunable GaAs Quantum Dots Interfaced with Rubidium Atoms., Huang, Huiying, Trotta Rinaldo, Huo Yongheng, Lettner Thomas, Wildmann Johannes S., Martín-Sánchez Javier, Huber Daniel, Reindl Marcus, Zhang Jiaxiang, Zallo Eugenio, et al. , ACS Photonics, 2017 Mar 15, Volume 4, Issue 4, p.868-872, (2017)

Triamidoamine thorium-arsenic complexes with parent arsenide, arsinidiide and arsenido structural motifs., Wildman, Elizabeth P., Balázs Gábor, Wooles Ashley J., Scheer Manfred, and Liddle Stephen T. , Nat Commun, 2017 Mar 09, Volume 8, p.14769, (2017)

Low energy bands and transport properties of chromium arsenide., Autieri, Carmine, Cuono Giuseppe, Forte Filomena, and Noce Canio , J Phys Condens Matter, 2017 Jun 07, Volume 29, Issue 22, p.224004, (2017)

Quasilinear quantum magnetoresistance in pressure-induced nonsymmorphic superconductor chromium arsenide., Niu, Q, Yu W C., Yip K Y., Lim Z L., Kotegawa H, Matsuoka E, Sugawara H, Tou H, Yanase Y, and Goh Swee K. , Nat Commun, 2017 Jun 05, Volume 8, p.15358, (2017)

Phonon-Plasmon Coupling and Active Cu Dopants in Indium Arsenide Nanocrystals Studied by Resonance Raman Spectroscopy., Faust, Adam, Amit Yorai, and Banin Uri , J Phys Chem Lett, 2017 Jun 01, Volume 8, Issue 11, p.2519-2525, (2017)

Temperature effects on gallium arsenide 63Ni betavoltaic cell., Butera, S, Lioliou G, and Barnett A M. , Appl Radiat Isot, 2017 Jul, Volume 125, p.42-47, (2017)

Direct Electrical Probing of Periodic Modulation of Zinc-Dopant Distributions in Planar Gallium Arsenide Nanowires., Choi, Wonsik, Seabron Eric, Mohseni Parsian K., Kim Jeong Dong, Gokus Tobias, Cernescu Adrian, Pochet Pascal, Johnson Harley T., Wilson William L., and Li Xiuling , ACS Nano, 2017 Feb 28, Volume 11, Issue 2, p.1530-1539, (2017)

Pro-Inflammatory and Pro-Fibrogenic Effects of Ionic and Particulate Arsenide and Indium-Containing Semiconductor Materials in the Murine Lung., Jiang, Wen, Wang Xiang, Osborne Olivia J., Du Yingjie, Chang Chong Hyun, Liao Yu-Pei, Sun Bingbing, Jiang Jinhong, Ji Zhaoxia, Li Ruibin, et al. , ACS Nano, 2017 Feb 28, Volume 11, Issue 2, p.1869-1883, (2017)

Covalent Surface Modification of Gallium Arsenide Photocathodes for Water Splitting in Highly Acidic Electrolyte., Garner, Logan E., K Steirer Xerxes, Young James L., Anderson Nicholas C., Miller Elisa M., Tinkham Jonathan S., Deutsch Todd G., Sellinger Alan, Turner John A., and Neale Nathan R. , ChemSusChem, 2017 Feb 22, Volume 10, Issue 4, p.767-773, (2017)

The formation of amplitude spectra in X-ray pixel detectors made of gallium arsenide., Ayzenshtat, Gennadiy, Prokopiev Dmitriy, Baidali Sergey, Tolbanov Oleg, and Dorzheeva Larisa , J Xray Sci Technol, 2017 Feb 21, (2017)

Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy., Chen, Bin, Fu Xuewen, Tang Jau, Lysevych Mykhaylo, Tan Hark Hoe, Jagadish Chennupati, and Zewail Ahmed H. , Proc Natl Acad Sci U S A, 2017 Dec 05, Volume 114, Issue 49, p.12876-12881, (2017)