About Arsenides

Arsenide structure

Arsenides are compounds of one or more metallic elements with arsenic. While many these compounds feature bonds with more covalent than ionic character, the arsenic in these compounds is typically considered to be an anion species, usually assigned the formal charge -3.

Many elements in group II and group III on the periodic table combine with arsenic to produce arsenide semiconductors. Gallium arsenide is the most common of these, and is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells, and optical windows.

Cadmium arsenide can be prepared as amorphous semiconductive glass, used in infrared detectors using Nernst effect, and in thin-film dynamic pressure sensors. It can be also used to make magnetoresistors and in photodetectors. Cadmium arsenide can also be used as a dopant for the semiconductor HgCdTe.

Indium arsenide is used for construction of photodiode infrared detectors and diode lasers.

American Elements manufactures multiple forms of arsenide compounds including solutions, nanopowders, submicron, and -325 mesh powders, and high surface area materials with particle distribution and particle size controlled and certified. We also produce larger -40 mesh, -100 mesh, -200 mesh range sizes and <0.5 mm, 2 mm, 5 mm and other sizes of shot, granules, lump, flake and pieces. Purities include 99%, 99.9%, 99.99%, 99.999% and 99.9999% (2N, 3N, 4N, 5N and 6N).

American Elements maintains industrial scale production for all its arsenide products and will execute Non-Disclosure or Confidentiality Agreements to protect customer know-how.

Arsenides Products

Aluminum Arsenide Aluminum Gallium Arsenide Antimony Arsenide
Barium Arsenide Boron Arsenide Cadmium Arsenide
Cadmium(IV) Arsenide Calcium Arsenide Chromium Arsenide
Cobalt Diarsenide Cobalt Triarsenide Cobalt(III) Arsenide
Copper Arsenide Dysprosium Arsenide Erbium Arsenide
Europium Arsenide Gadolinium Arsenide Gallium Aluminum Arsenide Granule
Gallium Aluminum Arsenide Lump Gallium Aluminum Arsenide Powder Gallium Arsenide
Gallium Arsenide Phosphide Gallium Arsenide Single Crystal Substrate Gallium Arsenide Wafer
Gallium Arsenide Windows Gallium Indium Arsenide Germanium Arsenide
Holmium Arsenide Indium Aluminum Arsenide Indium Aluminum Arsenide Granule
Indium Aluminum Arsenide Lump Indium Aluminum Arsenide Powder Indium Arsenide
Indium Arsenide Wafer Indium Gallium Arsenide Granule Indium Gallium Arsenide Lump
Indium Gallium Arsenide Phosphide Granule Indium Gallium Arsenide Phosphide Lump Indium Gallium Arsenide Phosphide Powder
Indium Gallium Arsenide Powder Indium Phosphide Arsenide InGaAlAs
InGaAsP Iron Diarsenide Iron(II) Arsenide
Iron(III) Arsenide Lanthanum Arsenide Lead Arsenide
Lead Tin Arsenic Granule Lead Tin Arsenic Lump Lead Tin Arsenic Powder
Lithium Arsenide Lutetium Arsenide Magnesium Arsenide
Manganese Arsenide Neodymium Arsenide Nickel Arsenide
Nickel Arsenide(II) Niobium Arsenide Potassium Arsenide
Praseodymium Arsenide Samarium Arsenide Silicon Arsenide
Silver Arsenide Sodium Arsenide Strontium Arsenide
Terbium Arsenide Thallium Arsenide Thulium Arsenide
Tin Arsenide Ytterbium Arsenide Yttrium Arsenide
Zinc Arsenide Zn3As Zinc Arsenide ZnAs2 Zirconium Arsenide

Recent Research & Development for Arsenides

Near-infrared photoluminescence biosensing platform with gold nanorods-over-gallium arsenide nanohorn array., Zhang, Yiming, Jiang Tao, and Tang Longhua , Biosens Bioelectron, 2017 Nov 15, Volume 97, p.278-284, (2017)

Electrically-Pumped Wavelength-Tunable GaAs Quantum Dots Interfaced with Rubidium Atoms., Huang, Huiying, Trotta Rinaldo, Huo Yongheng, Lettner Thomas, Wildmann Johannes S., Martín-Sánchez Javier, Huber Daniel, Reindl Marcus, Zhang Jiaxiang, Zallo Eugenio, et al. , ACS Photonics, 2017 Mar 15, Volume 4, Issue 4, p.868-872, (2017)

Low energy bands and transport properties of chromium arsenide., Autieri, Carmine, Cuono Giuseppe, Forte Filomena, and Noce Canio , J Phys Condens Matter, 2017 Jun 07, Volume 29, Issue 22, p.224004, (2017)

Quasilinear quantum magnetoresistance in pressure-induced nonsymmorphic superconductor chromium arsenide., Niu, Q, Yu W C., Yip K Y., Lim Z L., Kotegawa H, Matsuoka E, Sugawara H, Tou H, Yanase Y, and Goh Swee K. , Nat Commun, 2017 Jun 05, Volume 8, p.15358, (2017)

Phonon-Plasmon Coupling and Active Cu Dopants in Indium Arsenide Nanocrystals Studied by Resonance Raman Spectroscopy., Faust, Adam, Amit Yorai, and Banin Uri , J Phys Chem Lett, 2017 Jun 01, Volume 8, Issue 11, p.2519-2525, (2017)

Temperature effects on gallium arsenide (63)Ni betavoltaic cell., Butera, S, Lioliou G, and Barnett A M. , Appl Radiat Isot, 2017 Jul, Volume 125, p.42-47, (2017)

Direct Electrical Probing of Periodic Modulation of Zinc-Dopant Distributions in Planar Gallium Arsenide Nanowires., Choi, Wonsik, Seabron Eric, Mohseni Parsian K., Kim Jeong Dong, Gokus Tobias, Cernescu Adrian, Pochet Pascal, Johnson Harley T., Wilson William L., and Li Xiuling , ACS Nano, 2017 Feb 28, Volume 11, Issue 2, p.1530-1539, (2017)

Pro-Inflammatory and Pro-Fibrogenic Effects of Ionic and Particulate Arsenide and Indium-Containing Semiconductor Materials in the Murine Lung., Jiang, Wen, Wang Xiang, Osborne Olivia J., Du Yingjie, Chang Chong Hyun, Liao Yu-Pei, Sun Bingbing, Jiang Jinhong, Ji Zhaoxia, Li Ruibin, et al. , ACS Nano, 2017 Feb 28, Volume 11, Issue 2, p.1869-1883, (2017)

Covalent Surface Modification of Gallium Arsenide Photocathodes for Water Splitting in Highly Acidic Electrolyte., Garner, Logan E., K Steirer Xerxes, Young James L., Anderson Nicholas C., Miller Elisa M., Tinkham Jonathan S., Deutsch Todd G., Sellinger Alan, Turner John A., and Neale Nathan R. , ChemSusChem, 2017 Feb 22, Volume 10, Issue 4, p.767-773, (2017)

The formation of amplitude spectra in X-ray pixel detectors made of gallium arsenide., Ayzenshtat, Gennadiy, Prokopiev Dmitriy, Baidali Sergey, Tolbanov Oleg, and Dorzheeva Larisa , J Xray Sci Technol, 2017 Feb 21, (2017)

Terahertz emission enhancement in semi-insulating gallium arsenide integrated with subwavelength one-dimensional metal line array., Faustino, Maria Angela B., Lopez Lorenzo P., Afalla Jessica Pauline, Muldera Joselito, Hermosa Nathaniel, Salvador Arnel A., Somintac Armando S., and Estacio Elmer S. , Opt Lett, 2016 Oct 01, Volume 41, Issue 19, p.4515-4517, (2016)

Efficacy of Nd:YAG and GaAlAs lasers in comparison to 2% fluoride gel for the treatment of dentinal hypersensitivity., Soares, Marília De Lima, Porciúncula Geane Bandeira, De Lucena Mara Ilka Holan, Gueiros Luiz Alcino Mon, Leão Jair Carneiro, and Carvalho Alessandra De Albuque , Gen Dent, 2016 Nov-Dec, Volume 64, Issue 6, p.66-70, (2016)

New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping., Chen, Bijuan, Deng Zheng, Li Wenmin, Gao Moran, Liu Qingqing, Gu C Z., Hu F X., Shen B G., Frandsen Benjamin, Cheung Sky, et al. , Sci Rep, 2016 Nov 22, Volume 6, p.36578, (2016)

Continuous injection synthesis of indium arsenide quantum dots emissive in the short-wavelength infrared., Franke, Daniel, Harris Daniel K., Chen Ou, Bruns Oliver T., Carr Jessica A., Wilson Mark W. B., and Bawendi Moungi G. , Nat Commun, 2016 Nov 11, Volume 7, p.12749, (2016)

Optical parametric generation by a simultaneously Q-switched mode-locked single-oscillator thulium-doped fiber laser in orientation-patterned gallium arsenide., Donelan, Brenda, Kneis Christian, Scurria Giuseppe, Cadier Benoît, Robin Thierry, Lallier Eric, Grisard Arnaud, Gérard Bruno, Eichhorn Marc, and Kieleck Christelle , Opt Lett, 2016 Nov 01, Volume 41, Issue 21, p.5063-5066, (2016)