About Arsenides

Arsenide structure

Arsenides are compounds of one or more metallic elements with arsenic. While many these compounds feature bonds with more covalent than ionic character, the arsenic in these compounds is typically considered to be an anion species, usually assigned the formal charge -3.

Many elements in group II and group III on the periodic table combine with arsenic to produce arsenide semiconductors. Gallium arsenide is the most common of these, and is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells, and optical windows.

Cadmium arsenide can be prepared as amorphous semiconductive glass, used in infrared detectors using Nernst effect, and in thin-film dynamic pressure sensors. It can be also used to make magnetoresistors and in photodetectors. Cadmium arsenide can also be used as a dopant for the semiconductor HgCdTe.

Indium arsenide is used for construction of photodiode infrared detectors and diode lasers.

Recent Research & Development for Arsenides

Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications., Ren, Dingding, Ahtapodov Lyubomir, van Helvoort Antonius, Weman Helge, and Fimland Bjørn-Ove , Nanotechnology, 2019 Mar 27, (2019)

Samarium Polyarsenides Derived from Nanoscale Arsenic., Schoo, Christoph, Bestgen Sebastian, Egeberg Alexander, Seibert Jasmin, Konchenko Sergey N., Feldmann Claus, and Roesky Peter W. , Angew Chem Int Ed Engl, 2019 Jan 06, (2019)

Growth optimization and characterization of regular arrays of GaAs/AlGaAs core/shell nanowires for tandem solar cells on silicon., Vettori, M, Piazza V, Cattoni A, Scaccabarozzi A, Patriarche G, Regreny P, Chauvin N, Botella C, Grenet G, Penuelas J, et al. , Nanotechnology, 2019 Feb 22, Volume 30, Issue 8, p.084005, (2019)

Superconducting vanadium/indium-arsenide hybrid nanowires., Bjergfelt, Martin, Carrad Damon James, Kanne Thomas, Aagesen Martin, Fiordaliso Elisabetta, Johnson Erik, Shojaei Borzoyeh, Palmstrøm Chris J., Krogstrup Peter, T Jespersen Sand, et al. , Nanotechnology, 2019 Apr 04, (2019)

Design Optimization of Ge/GaAs-Based Heterojunction Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (A-TFET)., Seo, Jae Hwa, Yoon Young Jun, and Kang In Man , J Nanosci Nanotechnol, 2018 Sep 01, Volume 18, Issue 9, p.6602-6605, (2018)

Nonlinear propagation effects in high harmonic generation in reflection and transmission from gallium arsenide., Xia, Peiyu, Kim Changsu, Lu Faming, Kanai Teruto, Akiyama Hidefumi, Itatani Jiro, and Ishii Nobuhisa , Opt Express, 2018 Oct 29, Volume 26, Issue 22, p.29393-29400, (2018)

High final energy of gallium arsenide laser increases MyoD gene expression during the intermediate phase of muscle regeneration after cryoinjury in rats., Santos, Caroline Pereira, Aguiar Andreo Fernando, Giometti Ines Cristina, Mariano Thaoan Bruno, de Freitas Carlos Eduardo As, Nai Gisele Alborghett, de Freitas Selma Zambelli, Dal Pai-Silva Maeli, and Pacagnelli Francis Lopes , Lasers Med Sci, 2018 May, Volume 33, Issue 4, p.843-850, (2018)

Microscopic Nanomechanical Dissipation in Gallium Arsenide Resonators., Hamoumi, M, Allain P E., Hease W, Gil-Santos E, Morgenroth L, Gérard B, Lemaître A, Leo G, and Favero I , Phys Rev Lett, 2018 Jun 01, Volume 120, Issue 22, p.223601, (2018)

Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires., Li, Fajun, Xie Xiaolong, Gao Qian, Tan Liying, Zhou Yanping, Yang Qingbo, Ma Jing, Fu Lan, Tan Hark Hoe, and Jagadish Chennupati , Nanotechnology, 2018 Jun 01, Volume 29, Issue 22, p.225703, (2018)

Gallium arsenide (GaAs) leaching behavior and surface chemistry changes in response to pH and O., Ramos-Ruiz, Adriana, Field James A., Sun Wenjie, and Sierra-Alvarez Reyes , Waste Manag, 2018 Jul, Volume 77, p.1-9, (2018)

Facile synthesis of size-tunable tin arsenide nanocrystals., Tallapally, Venkatesham, Damma Devaiah, and Darmakkolla Srikar Rao , Chem Commun (Camb), 2018 Dec 19, (2018)

Pressure tuning of the thermal conductivity of gallium arsenide from first-principles calculations., Sun, Zhehao, Yuan Kunpeng, Zhang Xiaoliang, and Tang Dawei , Phys Chem Chem Phys, 2018 Dec 12, Volume 20, Issue 48, p.30331-30339, (2018)

Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide., Nemšák, Slavomír, Gehlmann Mathias, Kuo Cheng-Tai, Lin Shih-Chieh, Schlueter Christoph, Mlynczak Ewa, Lee Tien-Lin, Plucinski Lukasz, Ebert Hubert, Di Marco Igor, et al. , Nat Commun, 2018 Aug 17, Volume 9, Issue 1, p.3306, (2018)

All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001)., Kwoen, Jinkwan, Jang Bongyong, Lee Joohang, Kageyama Takeo, Watanabe Katsuyuki, and Arakawa Yasuhiko , Opt Express, 2018 Apr 30, Volume 26, Issue 9, p.11568-11576, (2018)

Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide., Timm, Rainer, Head Ashley R., Yngman Sofie, Knutsson Johan V., Hjort Martin, McKibbin Sarah R., Troian Andrea, Persson Olof, Urpelainen Samuli, Knudsen Jan, et al. , Nat Commun, 2018 Apr 12, Volume 9, Issue 1, p.1412, (2018)