About Arsenides

Arsenide structure

Arsenides are compounds of one or more metallic elements with arsenic. While many these compounds feature bonds with more covalent than ionic character, the arsenic in these compounds is typically considered to be an anion species, usually assigned the formal charge -3.

Many elements in group II and group III on the periodic table combine with arsenic to produce arsenide semiconductors. Gallium arsenide is the most common of these, and is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells, and optical windows.

Cadmium arsenide can be prepared as amorphous semiconductive glass, used in infrared detectors using Nernst effect, and in thin-film dynamic pressure sensors. It can be also used to make magnetoresistors and in photodetectors. Cadmium arsenide can also be used as a dopant for the semiconductor HgCdTe.

Indium arsenide is used for construction of photodiode infrared detectors and diode lasers.

Recent Research & Development for Arsenides

Design Optimization of Ge/GaAs-Based Heterojunction Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (A-TFET)., Seo, Jae Hwa, Yoon Young Jun, and Kang In Man , J Nanosci Nanotechnol, 2018 Sep 01, Volume 18, Issue 9, p.6602-6605, (2018)

High final energy of gallium arsenide laser increases MyoD gene expression during the intermediate phase of muscle regeneration after cryoinjury in rats., Santos, Caroline Pereira, Aguiar Andreo Fernando, Giometti Ines Cristina, Mariano Thaoan Bruno, de Freitas Carlos Eduardo As, Nai Gisele Alborghett, de Freitas Selma Zambelli, Dal Pai-Silva Maeli, and Pacagnelli Francis Lopes , Lasers Med Sci, 2018 May, Volume 33, Issue 4, p.843-850, (2018)

Microscopic Nanomechanical Dissipation in Gallium Arsenide Resonators., Hamoumi, M, Allain P E., Hease W, Gil-Santos E, Morgenroth L, Gérard B, Lemaître A, Leo G, and Favero I , Phys Rev Lett, 2018 Jun 01, Volume 120, Issue 22, p.223601, (2018)

Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires., Li, Fajun, Xie Xiaolong, Gao Qian, Tan Liying, Zhou Yanping, Yang Qingbo, Ma Jing, Fu Lan, Tan Hark Hoe, and Jagadish Chennupati , Nanotechnology, 2018 Jun 01, Volume 29, Issue 22, p.225703, (2018)

Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide., Nemšák, Slavomír, Gehlmann Mathias, Kuo Cheng-Tai, Lin Shih-Chieh, Schlueter Christoph, Mlynczak Ewa, Lee Tien-Lin, Plucinski Lukasz, Ebert Hubert, Di Marco Igor, et al. , Nat Commun, 2018 Aug 17, Volume 9, Issue 1, p.3306, (2018)

All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001)., Kwoen, Jinkwan, Jang Bongyong, Lee Joohang, Kageyama Takeo, Watanabe Katsuyuki, and Arakawa Yasuhiko , Opt Express, 2018 Apr 30, Volume 26, Issue 9, p.11568-11576, (2018)

Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide., Timm, Rainer, Head Ashley R., Yngman Sofie, Knutsson Johan V., Hjort Martin, McKibbin Sarah R., Troian Andrea, Persson Olof, Urpelainen Samuli, Knudsen Jan, et al. , Nat Commun, 2018 Apr 12, Volume 9, Issue 1, p.1412, (2018)

Energy level tuned indium arsenide colloidal quantum dot films for efficient photovoltaics., Song, Jung Hoon, Choi Hyekyoung, Pham Hien Thu, and Jeong Sohee , Nat Commun, 2018 10 15, Volume 9, Issue 1, p.4267, (2018)

Unusual high thermal conductivity in boron arsenide bulk crystals., Tian, Fei, Song Bai, Chen Xi, Ravichandran Navaneetha K., Lv Yinchuan, Chen Ke, Sullivan Sean, Kim Jaehyun, Zhou Yuanyuan, Liu Te-Huan, et al. , Science, 2018 08 10, Volume 361, Issue 6402, p.582-585, (2018)

High thermal conductivity in cubic boron arsenide crystals., Li, Sheng, Zheng Qiye, Lv Yinchuan, Liu Xiaoyuan, Wang Xiqu, Huang Pinshane Y., Cahill David G., and Lv Bing , Science, 2018 08 10, Volume 361, Issue 6402, p.579-581, (2018)

Experimental observation of high thermal conductivity in boron arsenide., Kang, Joon Sang, Li Man, Wu Huan, Nguyen Huuduy, and Hu Yongjie , Science, 2018 08 10, Volume 361, Issue 6402, p.575-578, (2018)

Signatures of transient Wannier-Stark localization in bulk gallium arsenide., Schmidt, C, Bühler J, Heinrich A-C, Allerbeck J, Podzimski R, Berghoff D, Meier T, Schmidt W G., Reichl C, Wegscheider W, et al. , Nat Commun, 2018 07 23, Volume 9, Issue 1, p.2890, (2018)

Computational exploration of two-dimensional silicon diarsenide and germanium arsenide for photovoltaic applications., Matta, Sri Kasi, Zhang Chunmei, Jiao Yalong, O'Mullane Anthony, and Du Aijun , Beilstein J Nanotechnol, 2018, Volume 9, p.1247-1253, (2018)

Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire., Wagner, Tino, Menges Fabian, Riel Heike, Gotsmann Bernd, and Stemmer Andreas , Beilstein J Nanotechnol, 2018, Volume 9, p.129-136, (2018)

Significantly enhanced thermal conductivity of indium arsenide nanowires via sulfur passivation., Xiong, Yucheng, Tang Hao, Wang Xiaomeng, Zhao Yang, Fu Qiang, Yang Juekuan, and Xu Dongyan , Sci Rep, 2017 Oct 16, Volume 7, Issue 1, p.13252, (2017)