About Arsenides

Arsenide structure

Arsenides are compounds of one or more metallic elements with arsenic. While many these compounds feature bonds with more covalent than ionic character, the arsenic in these compounds is typically considered to be an anion species, usually assigned the formal charge -3.

Many elements in group II and group III on the periodic table combine with arsenic to produce arsenide semiconductors. Gallium arsenide is the most common of these, and is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells, and optical windows.

Cadmium arsenide can be prepared as amorphous semiconductive glass, used in infrared detectors using Nernst effect, and in thin-film dynamic pressure sensors. It can be also used to make magnetoresistors and in photodetectors. Cadmium arsenide can also be used as a dopant for the semiconductor HgCdTe.

Indium arsenide is used for construction of photodiode infrared detectors and diode lasers.

American Elements manufactures multiple forms of arsenide compounds including solutions, nanopowders, submicron, and -325 mesh powders, and high surface area materials with particle distribution and particle size controlled and certified. We also produce larger -40 mesh, -100 mesh, -200 mesh range sizes and <0.5 mm, 2 mm, 5 mm and other sizes of shot, granules, lump, flake and pieces. Purities include 99%, 99.9%, 99.99%, 99.999% and 99.9999% (2N, 3N, 4N, 5N and 6N).

American Elements maintains industrial scale production for all its arsenide products and will execute Non-Disclosure or Confidentiality Agreements to protect customer know-how.

Arsenides Products

Aluminum Arsenide Aluminum Gallium Arsenide Antimony Arsenide
Arsenic Germanium Selenide Barium Arsenide Boron Arsenide
Cadmium Arsenide Cadmium(IV) Arsenide Calcium Arsenide
Chromium Arsenide Cobalt Diarsenide Cobalt Triarsenide
Cobalt(III) Arsenide Copper Arsenide Dysprosium Arsenide
Erbium Arsenide Europium Arsenide Gadolinium Arsenide
Gallium Aluminum Arsenide Granule Gallium Aluminum Arsenide Lump Gallium Aluminum Arsenide Powder
Gallium Arsenide Gallium Arsenide Phosphide Gallium Arsenide Single Crystal Substrate
Gallium Arsenide Wafer Gallium Arsenide Windows Gallium Indium Arsenide
Germanium Arsenide Holmium Arsenide Indium Aluminum Arsenide
Indium Aluminum Arsenide Granule Indium Aluminum Arsenide Lump Indium Aluminum Arsenide Powder
Indium Arsenide Indium Arsenide Wafer Indium Gallium Arsenide Granule
Indium Gallium Arsenide Lump Indium Gallium Arsenide Phosphide Granule Indium Gallium Arsenide Phosphide Lump
Indium Gallium Arsenide Phosphide Powder Indium Gallium Arsenide Powder Indium Phosphide Arsenide
InGaAlAs InGaAsP Iron Diarsenide
Iron(II) Arsenide Iron(III) Arsenide Lanthanum Arsenide
Lead Arsenide Lead Tin Arsenic Granule Lead Tin Arsenic Lump
Lead Tin Arsenic Powder Lithium Arsenide Lutetium Arsenide
Magnesium Arsenide Manganese Arsenide Neodymium Arsenide
Nickel Arsenide Nickel Arsenide(II) Niobium Arsenide
Potassium Arsenide Praseodymium Arsenide Samarium Arsenide
Silicon Arsenide Silver Arsenide Sodium Arsenide
Strontium Arsenide Terbium Arsenide Thallium Arsenide
Thulium Arsenide Tin Arsenide Ytterbium Arsenide
Yttrium Arsenide Zinc Arsenide Zn3As Zinc Arsenide ZnAs2
Zirconium Arsenide

Recent Research & Development for Arsenides

Delayed Triplet-State Formation through Hybrid Charge Transfer Exciton at Copper Phthalocyanine/GaAs Heterojunction., Lim, Heeseon, Kwon Hyuksang, Kim Sang Kyu, and Kim Jeong Won , J Phys Chem Lett, 2017 Oct 05, Volume 8, Issue 19, p.4763-4768, (2017)

Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy., Chen, Bin, Fu Xuewen, Tang Jau, Lysevych Mykhaylo, Tan Hark Hoe, Jagadish Chennupati, and Zewail Ahmed H. , Proc Natl Acad Sci U S A, 2017 Nov 20, (2017)

Near-infrared photoluminescence biosensing platform with gold nanorods-over-gallium arsenide nanohorn array., Zhang, Yiming, Jiang Tao, and Tang Longhua , Biosens Bioelectron, 2017 Nov 15, Volume 97, p.278-284, (2017)

Electrically-Pumped Wavelength-Tunable GaAs Quantum Dots Interfaced with Rubidium Atoms., Huang, Huiying, Trotta Rinaldo, Huo Yongheng, Lettner Thomas, Wildmann Johannes S., Martín-Sánchez Javier, Huber Daniel, Reindl Marcus, Zhang Jiaxiang, Zallo Eugenio, et al. , ACS Photonics, 2017 Mar 15, Volume 4, Issue 4, p.868-872, (2017)

Triamidoamine thorium-arsenic complexes with parent arsenide, arsinidiide and arsenido structural motifs., Wildman, Elizabeth P., Balázs Gábor, Wooles Ashley J., Scheer Manfred, and Liddle Stephen T. , Nat Commun, 2017 Mar 09, Volume 8, p.14769, (2017)

Low energy bands and transport properties of chromium arsenide., Autieri, Carmine, Cuono Giuseppe, Forte Filomena, and Noce Canio , J Phys Condens Matter, 2017 Jun 07, Volume 29, Issue 22, p.224004, (2017)

Quasilinear quantum magnetoresistance in pressure-induced nonsymmorphic superconductor chromium arsenide., Niu, Q, Yu W C., Yip K Y., Lim Z L., Kotegawa H, Matsuoka E, Sugawara H, Tou H, Yanase Y, and Goh Swee K. , Nat Commun, 2017 Jun 05, Volume 8, p.15358, (2017)

Phonon-Plasmon Coupling and Active Cu Dopants in Indium Arsenide Nanocrystals Studied by Resonance Raman Spectroscopy., Faust, Adam, Amit Yorai, and Banin Uri , J Phys Chem Lett, 2017 Jun 01, Volume 8, Issue 11, p.2519-2525, (2017)

Temperature effects on gallium arsenide (63)Ni betavoltaic cell., Butera, S, Lioliou G, and Barnett A M. , Appl Radiat Isot, 2017 Jul, Volume 125, p.42-47, (2017)

Pro-Inflammatory and Pro-Fibrogenic Effects of Ionic and Particulate Arsenide and Indium-Containing Semiconductor Materials in the Murine Lung., Jiang, Wen, Wang Xiang, Osborne Olivia J., Du Yingjie, Chang Chong Hyun, Liao Yu-Pei, Sun Bingbing, Jiang Jinhong, Ji Zhaoxia, Li Ruibin, et al. , ACS Nano, 2017 Feb 28, Volume 11, Issue 2, p.1869-1883, (2017)

Direct Electrical Probing of Periodic Modulation of Zinc-Dopant Distributions in Planar Gallium Arsenide Nanowires., Choi, Wonsik, Seabron Eric, Mohseni Parsian K., Kim Jeong Dong, Gokus Tobias, Cernescu Adrian, Pochet Pascal, Johnson Harley T., Wilson William L., and Li Xiuling , ACS Nano, 2017 Feb 28, Volume 11, Issue 2, p.1530-1539, (2017)

Covalent Surface Modification of Gallium Arsenide Photocathodes for Water Splitting in Highly Acidic Electrolyte., Garner, Logan E., K Steirer Xerxes, Young James L., Anderson Nicholas C., Miller Elisa M., Tinkham Jonathan S., Deutsch Todd G., Sellinger Alan, Turner John A., and Neale Nathan R. , ChemSusChem, 2017 Feb 22, Volume 10, Issue 4, p.767-773, (2017)

The formation of amplitude spectra in X-ray pixel detectors made of gallium arsenide., Ayzenshtat, Gennadiy, Prokopiev Dmitriy, Baidali Sergey, Tolbanov Oleg, and Dorzheeva Larisa , J Xray Sci Technol, 2017 Feb 21, (2017)

Terahertz emission enhancement in semi-insulating gallium arsenide integrated with subwavelength one-dimensional metal line array., Faustino, Maria Angela B., Lopez Lorenzo P., Afalla Jessica Pauline, Muldera Joselito, Hermosa Nathaniel, Salvador Arnel A., Somintac Armando S., and Estacio Elmer S. , Opt Lett, 2016 Oct 01, Volume 41, Issue 19, p.4515-4517, (2016)

Efficacy of Nd:YAG and GaAlAs lasers in comparison to 2% fluoride gel for the treatment of dentinal hypersensitivity., Soares, Marília De Lima, Porciúncula Geane Bandeira, De Lucena Mara Ilka Holan, Gueiros Luiz Alcino Mon, Leão Jair Carneiro, and Carvalho Alessandra De Albuque , Gen Dent, 2016 Nov-Dec, Volume 64, Issue 6, p.66-70, (2016)