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Gallium Arsenide Wafer

CAS #: 1303-00-0
Linear Formula:
GaAs
MDL Number
MFCD00011017
EC No.:
215-114-8

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Product Product Code ORDER SAFETY DATA Technical data
Gallium Arsenide Wafer GA-AS-01-WF SDS > Data Sheet >
Gallium Arsenide Wafer (P-type) GA-AS-01-WSX.PTYP SDS > Data Sheet >
Gallium Arsenide Wafer (N-type) GA-AS-01-WSX.NTYP SDS > Data Sheet >
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Gallium Arsenide Wafer Properties (Theoretical)

Compound Formula AsGa
Molecular Weight 144.64
Appearance Gray crystalline solid
Melting Point 1400 °C (2550 °F)
Boiling Point N/A
Density 5.3 g/cm3
Solubility in H2O N/A
Exact Mass 143.84717
Monoisotopic Mass 143.84717
Poisson's Ratio 0.31
Young's Modulus 85 GPa
Thermal Conductivity 47 W/m-K
Thermal Expansion 5.6 µm/m-K
Specific Heat 360 J/kg-K
Refractive Index 3.4

Gallium Arsenide Wafer Health & Safety Information

Signal Word Danger
Hazard Statements H301 + H331-H410
Hazard Codes T,N
Risk Codes 23/25-50/53
Safety Statements 20/21-28-45-60-61
RTECS Number LW8800000
Transport Information UN 1557 6.1/PG 2
WGK Germany 3

About Gallium Arsenide Wafer

High purity semiconductor wafersAmerican Elements manufactures high purity single crystal Gallium Arsenide Wafers for optoelectronics applications. Our standard wafer diameters range from 25.4 mm (1 inch) to 300 mm (11.8 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants. American Elements can produce most materials in high purity and ultra high purity (99.99%, 99.999%, 99.9999%, and up to 99.99999%) forms and follows applicable ASTM testing standards; a range of grades are available including Mil Spec (military grade), ACS, Reagent and Technical Grade, Food, Agricultural and Pharmaceutical Grade, Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia). We can also produce materials to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies. Typical and custom packaging is available, as is additional research, technical and safety (MSDS) data. Please request a quote above to receive pricing information based on your specifications.

Synonyms

Gallium arsenide single crystal wafer, GaAs eipwafer, GaAs HEMT, pHEMT, mHEMT epi-wafer, N type or P type epitaxial wafer

Chemical Identifiers

Linear Formula GaAs
Pubchem CID 14770
MDL Number MFCD00011017
EC No. 215-114-8
IUPAC Name gallanylidynearsane
Beilstein/Reaxys No. N/A
SMILES [As]#[Ga]
InchI Identifier InChI=1S/As.Ga
InchI Key JBRZTFJDHDCESZ-UHFFFAOYSA-N
Chemical Formula
Molecular Weight
Standard InchI
Appearance
Melting Point
Boiling Point
Density

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Related Elements

See more Arsenic products. Arsenic (atomic symbol: As, atomic number: 33) is a Block P, Group 15, Period 4 element with an atomic radius of 74.92160. Arsenic Bohr ModelThe number of electrons in each of arsenic's shells is 2, 8, 18, 5 and its electron configuration is [Ar] 3d10 4s2 4p3. The arsenic atom has a radius of 119 pm and a Van der Waals radius of 185 pm. Arsenic was discovered in the early Bronze Age, circa 2500 BC. It was first isolated by Albertus Magnus in 1250 AD. In its elemental form, arsenic is a metallic grey, brittle, crystalline, semimetallic solid. Elemental ArsenicArsenic is found in numerous minerals including arsenolite (As2O3), arsenopyrite (FeAsS), loellingite (FeAs2), orpiment (As2S3), and realgar (As4S4). Arsenic has numerous applications as a semiconductor and other electronic applications as indium arsenide, silicon arsenide and tin arsenide. Arsenic is finding increasing uses as a doping agent in solid-state devices such as transistors.

See more Gallium products. Gallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor devices for microelectronics and optics. The element name originates from the Latin word 'Gallia' referring to Gaul, the old name of France.