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Linear Formula:



(2N) 99% InGaAsP
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(3N) 99.9% InGaAsP
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(4N) 99.99% InGaAsP
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(5N) 99.999% InGaAsP
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InGaAsP Properties



InGaAsP Health & Safety Information

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About InGaAsP

InGaAsP is a crystalline solid used as a semiconductor and in photo optic applications. American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia) and follows applicable ASTM testing standards. Typical and custom packaging is available. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

InGaAsP Synonyms

Indium gallium arsenic phosphide, Indium gallium arsenide phosphide,

InGaAsP Chemical Identifiers

Linear Formula


Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Related Elements

See more Arsenic products. Arsenic (atomic symbol: As, atomic number: 33) is a Block P, Group 15, Period 4 element with an atomic radius of 74.92160. Arsenic Bohr ModelThe number of electrons in each of arsenic's shells is 2, 8, 18, 5 and its electron configuration is [Ar] 3d10 4s2 4p3. The arsenic atom has a radius of 119 pm and a Van der Waals radius of 185 pm. Arsenic was discovered in the early Bronze Age, circa 2500 BC. It was first isolated by Albertus Magnus in 1250 AD. In its elemental form, arsenic is a metallic grey, brittle, crystalline, semimetallic solid. Elemental ArsenicArsenic is found in numerous minerals including arsenolite (As2O3), arsenopyrite (FeAsS), loellingite (FeAs2), orpiment (As2S3), and realgar (As4S4). Arsenic has numerous applications as a semiconductor and other electronic applications as indium arsenide, silicon arsenide and tin arsenide. Arsenic is finding increasing uses as a doping agent in solid-state devices such as transistors.

See more Gallium products. Gallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor devices for microelectronics and optics. The element name originates from the Latin word 'Gallia', the old name of France, and the word 'Gallus,' meaning rooster.

See more Indium products. Indium (atomic symbol: In, atomic number: 49) is a Block P, Group 13, Period 5 element with an atomic weight of 114.818. The number of electrons in each of indium's shells is [2, 8, 18, 18, 3] and its electron configuration is [Kr] 4d10 5s2 5p1. The indium atom has a radius of 162.6 pm and a Van der Waals radius of 193 pm. Indium was discovered by Ferdinand Reich and Hieronymous Theodor Richter in 1863. Indium Bohr ModelIt is a relatively rare, extremely soft metal is a lustrous silvery gray and is both malleable and easily fusible. It has similar chemical properties to Elemental Indiumgallium such as a low melting point and the ability to wet glass. Fields such as optics and microelectronics that utilize semiconductor technology have wide uses for indium, especially in the form of Indiun Tin Oxide (ITO). Thin films of Copper Indium Gallium Selenide (CIGS) are used in high-performing solar cells. Indium's name is derived from the Latin word indicum, meaning violet.

Phosphorus Bohr ModelSee more Phosphorus products. Phosphorus (atomic symbol: P, atomic number: 15) is a Block P, Group 15, Period 3 element. The number of electrons in each of Phosphorus's shells is 2, 8, 5 and its electronic configuration is [Ne] 3s2 3p3. The phosphorus atom has a radius of 110.5.pm and its Van der Waals radius is 180.pm. Phosphorus is a highly-reactive non-metallic element (sometimes considered a metalloid) with two primary allotropes, white phosphorus and red phosphorus its black flaky appearance is similar to graphitic carbon. Compound forms of phosphorus include phosphates and phosphides. Phosphorous was first recognized as an element by Hennig Brand in 1669 its name (phosphorus mirabilis, or "bearer of light") was inspired from the brilliant glow emitted by its distillation.

Recent Research

Bowtie nanoantenna integrated with indium gallium arsenide antimonide for uncooled infrared detector with enhanced sensitivity., Choi, Sangjo, and Sarabandi Kamal , Appl Opt, 2013 Dec 10, Volume 52, Issue 35, p.8432-8, (2013)

Scalable Indium Phosphide Thin-Film Nanophotonics Platform for Photovoltaic and Photoelectrochemical Devices., Lin, Qingfeng, Sarkar Debarghya, Lin Yuanjing, Yeung Matthew, Blankemeier Louis, Hazra Jubin, Wang Wei, Niu Shanyuan, Ravichandran Jayakanth, Fan Zhiyong, et al. , ACS Nano, 2017 May 23, Volume 11, Issue 5, p.5113-5119, (2017)

Electrically-Pumped Wavelength-Tunable GaAs Quantum Dots Interfaced with Rubidium Atoms., Huang, Huiying, Trotta Rinaldo, Huo Yongheng, Lettner Thomas, Wildmann Johannes S., Martín-Sánchez Javier, Huber Daniel, Reindl Marcus, Zhang Jiaxiang, Zallo Eugenio, et al. , ACS Photonics, 2017 Mar 15, Volume 4, Issue 4, p.868-872, (2017)

Indium Phosphide-Based Quantum Dots with Shell-Enhanced Absorption for Luminescent Down-Conversion., Dupont, Dorian, Tessier Mickael D., Smet Philippe F., and Hens Zeger , Adv Mater, 2017 Jun 05, (2017)

Phonon-Plasmon Coupling and Active Cu Dopants in Indium Arsenide Nanocrystals Studied by Resonance Raman Spectroscopy., Faust, Adam, Amit Yorai, and Banin Uri , J Phys Chem Lett, 2017 Jun 01, Volume 8, Issue 11, p.2519-2525, (2017)

Nanosecond difference-frequency generation in orientation-patterned gallium phosphide., Wei, Junxiong, S Kumar Chaitanya, Ye Hanyu, Devi Kavita, Schunemann Peter G., and Ebrahim-Zadeh M , Opt Lett, 2017 Jun 01, Volume 42, Issue 11, p.2193-2196, (2017)

Temperature effects on gallium arsenide (63)Ni betavoltaic cell., Butera, S, Lioliou G, and Barnett A M. , Appl Radiat Isot, 2017 Jul, Volume 125, p.42-47, (2017)

Pro-Inflammatory and Pro-Fibrogenic Effects of Ionic and Particulate Arsenide and Indium-Containing Semiconductor Materials in the Murine Lung., Jiang, Wen, Wang Xiang, Osborne Olivia J., Du Yingjie, Chang Chong Hyun, Liao Yu-Pei, Sun Bingbing, Jiang Jinhong, Ji Zhaoxia, Li Ruibin, et al. , ACS Nano, 2017 Feb 28, Volume 11, Issue 2, p.1869-1883, (2017)

Direct Electrical Probing of Periodic Modulation of Zinc-Dopant Distributions in Planar Gallium Arsenide Nanowires., Choi, Wonsik, Seabron Eric, Mohseni Parsian K., Kim Jeong Dong, Gokus Tobias, Cernescu Adrian, Pochet Pascal, Johnson Harley T., Wilson William L., and Li Xiuling , ACS Nano, 2017 Feb 28, Volume 11, Issue 2, p.1530-1539, (2017)

Covalent Surface Modification of Gallium Arsenide Photocathodes for Water Splitting in Highly Acidic Electrolyte., Garner, Logan E., K Steirer Xerxes, Young James L., Anderson Nicholas C., Miller Elisa M., Tinkham Jonathan S., Deutsch Todd G., Sellinger Alan, Turner John A., and Neale Nathan R. , ChemSusChem, 2017 Feb 22, Volume 10, Issue 4, p.767-773, (2017)


June 23, 2017
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