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Silicon
Silicon information, including Technical Data, Safety Data and its high purity properties, research, applications and other useful facts are discussed below. Scientific facts such as the atomic structure, ionization energy, abundance on Earth, conductivity and thermal properties are included.

Silicon is one of man's most useful elements. It makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, being exceeded only by oxygen. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Silica, as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Silicon is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Ultra high purity silicon can be doped with boron, gallium, phosphorus , or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics and space-age industries. Hydrogenated amorphous silicon has shown promise in producing economical cells for converting solar energy into electricity. Silcones are important products of silicon. They range from liquids to hard, glasslike solids with many useful properties. Thin film deposition of Silicon Nanoparticle quantum dots on the polycrystalline silicon substrate of a photovoltaic (solar) cell increases voltage output as much as 60% by fluorescing the incoming light prior to capture.

Silicon facts, including appearance, CAS #, and molecular formula and safety data, research and properties are

 

  Hydrogen                                 Helium
  Lithium Beryllium                     Boron Carbon Nitrogen Oxygen Fluorine Neon
  Sodium Magnesium                     Aluminum Silicon Phosphorus Sulfur Chlorine Argon
  Potassium Calcium Scandium Titanium Vanadium Chromium Manganese Iron Cobalt Hydrogen Copper Zinc Gallium Germanium Arsenic Selenium Bromine Krypton
  Rubidium Strontium Yttrium Zirconium Niobium Molybdenum Technetium Ruthenium Rhodium Palladium Silver Cadmium Indium Tin Antimony Tellurium Iodine Xenon
  Cesium Barium Cerium Hafnium Tantalum Tungsten Rhenium Osmium Iridium Platinum Gold Mercury Thallium Lead Bismuth Polonium Astatine Radon
                                     
      Cerium Praseodymium Neodymium Promethium Samarium Europium Gadolinium Terbium Dysprosium Holmium Erbium Thulium Ytterbium Lutetium    
      Thorium Protactinium Uranium Neptunium Plutonium Americium Curium Berkelium Californium Einsteinium Fermium Mendelevium Nobelium Lawerencium    


(click on an element)
available for many specific states, forms and shapes on the product pages listed to the left. Elemental or metallic forms include pellets, rod, wire and granules for evaporation source material purposes. Nanoparticles and nanopowders provide ultra high surface area which nanotechnology research and recent experiments demonstrate function to create new and unique properties and benefits.

Oxides are available in forms including powders and dense pellets for such uses as optical coating and thin film applications. Oxides tend to be insoluble. Fluorides are another insoluble form for uses in which oxygen is undesirable such as metallurgy, chemical and physical vapor deposition and in some optical coatings. Silicon is available in soluble forms including chlorides, nitrates and acetates. These compounds are also manufactured as solutions at specified stoichiometries.

Silicon is a Block D, Group 14, Period 3 element. The electronic configuration is [Ne] 3s2 3p2. In its elemental form silicon's CAS number is 7440-21-3. The silicon atom has a radius of 117.6.pm and it's Van der Waals radius is 210.pm.

All elemental metals, compounds and solutions may be synthesized in ultra high purity (e.g. 99.999%) for laboratory standards, advanced electronic, metallurgy and optical materials and other high technology advantages. Information is provided for stable (non-radioactive) isotopes. Organo-Metallic Silicon compounds are soluble in organic or non-aqueous solvents. See Analytical Services for information on available certified chemical and physical analysis techniques including MS-ICP, X-Ray Diffraction, PSD and Surface Area (BET) analysis.

Silicon was first discovered by Jons Berzelius in 1823.

French Silicium German Silicium Italian Silicio Portuguese Silício Spanish Silicio Swedish Kisel

Abundance. The following table shows the abundance of silicon and each of its naturally occurring isotopes on Earth along with the atomic mass for each isotope.

Isotope
Atomic Mass
% Abundance on Earth
Si-28
27.976926533
92.23
Si-29
28.97649472
4.67
Si-30
29.97377022
3.10

Safety Data. The safety data for silicon metal, nanoparticles and its compounds can vary widely depending on the form. For potential hazard information, toxicity, and road, sea and air transportation limitations, such as DOT Hazard Class, DOT Number, EU Number, NFPA Health rating and RTECS Class, please see the specific material or compound referenced in the left margin.

Ionization Energy. The ionization energy for silicon (the least required energy to release a single electron from the atom in it's ground state in the gas phase) is stated in the following table:

1st Ionization Energy
786.52 kJ mol-1
2nd Ionization Energy
1577.15 kJ mol-1
3rd Ionization Energy
3231.61 kJ mol-1

Conductivity. As to silicon's electrical and thermal conductivity, the electrical conductivity measured as to electrical resistivity @ 20 ºC is 10 μΩcm and its electronegativities (or its ability to draw electrons relative to other elements) is 1.9. The thermal conductivity of silicon is 148 W m-1 K-1.

Thermal Properties. The melting point and boiling point for silicon are stated below. The following chart sets forth the heat of fusion, heat of vaporization and heat of atomization.

Heat of Fusion
39.6 kJ mol-1
Heat of Vaporization
383.3 kJ mol-1
Heat of Atomization
451.29 kJ mol-1

 
Formula Atomic Number Molecular Weight Electronegativity (Pauling) Density Melting Point
Boiling Point
Vanderwaals radius
Ionic radius Energy of first ionization
Si 14 28.0855 g.mol -1 1.8 2.33 g.cm-3 at 20 °C 1410 °C 3265 °C 0.132 nm 0.271 nm (-4) ; 0.041 (+4) 786.3 kJ.mol-1

PRODUCT CATALOG U.S. Operations Submicron & Nanopowder Tolling Ultra High Purity Sputtering Target Crystal Growth Rod, Plate, Powder, etc. Foil
 
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Periodic table of the elements science and academic information, elements and advanced materials data, scientific presentations and all pages, designs, concepts, logos, and color schemes herein are the copyrighted proprietary rights and intellectual property of American Elements. American Elements is a U.S. Registered Trademark. © 2001-2009. American Elements. All rights reserved.

 

Recent Research & Development for Silicon

  • A realistic molecular model of cement hydrates. Pellenq RJ, Kushima A, Shahsavari R, Van Vliet KJ, Buehler MJ, Yip S, Ulm FJ. Proc Natl Acad Sci U S A. 2009 Sep 22;106(38):16102-7. Epub 2009 Sep 8. PMID: 19805265 [PubMed - in process]

  • Controlled release of chlorhexidine from amorphous microporous silica. Verraedt E, Pendela M, Adams E, Hoogmartens J, Martens JA. J Control Release. 2009 Oct 2. [Epub ahead of print] PMID: 19804804 [PubMed - as supplied by publisher]

  • Surface Induced Nanofiber Growth by Self-Assembly of a Silk-Elastin-like Protein Polymer. Hwang W, Kim BH, Dandu R, Cappello J, Ghandehari H, Seog J. Langmuir. 2009 Oct 5. [Epub ahead of print] PMID: 19803470 [PubMed - as supplied by publisher]

  • [Transaxillary dual-plane breast augmentation with endoscope assistant] Luan J, Mu DL, Mu L, Liu C, Zhang ZQ. Zhonghua Zheng Xing Wai Ke Za Zhi. 2009 May;25(3):175-7. Chinese. PMID: 19803195 [PubMed - in process]

  • Nanotechnology: A gentle jackhammer. Gnecco E. Nature. 2009 Sep 10;461(7261):178-9. No abstract available. PMID: 19741691 [PubMed - indexed for MEDLINE]

  • Tumour Risks and Genotype-Phenotype-Proteotype Analysis in 358 Patients with Germline Mutations in SDHB and SDHD. Ricketts CJ, Forman JR, Rattenbury E, Bradshaw N, Lalloo F, Izatt L, Cole TR, Armstrong R, Ajith Kumar VK, Morrison PJ, Atkinson AB, Douglas F, Ball SG, Cook J, Srirangalingam U, Killick P, Kirby G, Aylwin S, Woodward ER, Evans DG, Hodgson SV, Murday V, Chew SL, Connell JM, Blundell TL, Macdonald F, Maher ER. Hum Mutat. 2009 Oct 2. [Epub ahead of print] PMID: 19802898 [PubMed - as supplied by publisher]

  • A Remarkable Base-Stabilized Bis(silylene) with a Silicon(I)-Silicon(I) Bond. Sen SS, Jana A, Roesky HW, Schulzke C. Angew Chem Int Ed Engl. 2009 Oct 2. [Epub ahead of print] No abstract available. PMID: 19802861 [PubMed - as supplied by publisher]

  • "Hot standards" for the thermoacidophilic archaeon Sulfolobus solfataricus. Zaparty M, Esser D, Gertig S, Haferkamp P, Kouril T, Manica A, Pham TK, Reimann J, Schreiber K, Sierocinski P, Teichmann D, van Wolferen M, von Jan M, Wieloch P, Albers SV, Driessen AJ, Klenk HP, Schleper C, Schomburg D, van der Oost J, Wright PC, Siebers B. Extremophiles. 2009 Oct 4. [Epub ahead of print] PMID: 19802714 [PubMed - as supplied by publisher]

  • Controlled thinning and surface smoothening of silicon nanopillars. Kalem S, Werner P, Nilsson B, Talalaev VG, Hagberg M, Arthursson O, Södervall U. Nanotechnology. 2009 Oct 5;20(44):445303. [Epub ahead of print] PMID: 19801781 [PubMed - as supplied by publisher]

  • Adsorption of small NaCl clusters on surfaces of silicon nanostructures. Amsler M, Alireza Ghasemi S, Goedecker S, Neelov A, Genovese L. Nanotechnology. 2009 Oct 5;20(44):445301. [Epub ahead of print] PMID: 19801776 [PubMed - as supplied by publisher]

  • Modeling and analysis of nanoscale interaction forces between Acidithiobacillus ferrooxidans and AFM tip. Chandraprabha MN, Somasundaran P, Natarajan KA. Colloids Surf B Biointerfaces. 2009 Sep 8. [Epub ahead of print] PMID: 19800769 [PubMed - as supplied by publisher]

  • Surface transformation of silicon-doped hydroxyapatite immersed in culture medium under dynamic and static conditions. Silva HM, Mateescu M, Ponche A, Damia C, Champion E, Soares G, Anselme K. Colloids Surf B Biointerfaces. 2009 Sep 15. [Epub ahead of print] PMID: 19800204 [PubMed - as supplied by publisher]

  • Free-Standing Lipid Bilayers in Silicon Chips-Membrane Stabilization Based on Microfabricated Apertures with a Nanometer-Scale Smoothness. Hirano-Iwata A, Aoto K, Oshima A, Taira T, Yamaguchi RT, Kimura Y, Niwano M. Langmuir. 2009 Oct 2. [Epub ahead of print] PMID: 19799400 [PubMed - as supplied by publisher]

  • Silicon-Bismuth and Germanium-Bismuth Clusters of High Stability. Zdetsis AD. J Phys Chem A. 2009 Oct 2. [Epub ahead of print] PMID: 19799391 [PubMed - as supplied by publisher]

  • [Electroluminescence from a Mn2+ activated SiO2 : Si film on N(+)-Si substrate] Wen J, Chen T, Ran GZ. Guang Pu Xue Yu Guang Pu Fen Xi. 2009 Jul;29(7):1736-9. Chinese. PMID: 19798929 [PubMed - in process]

  • Optical properties of Al2O3 thin films grown by atomic layer deposition. Kumar P, Wiedmann MK, Winter CH, Avrutsky I. Appl Opt. 2009 Oct 1;48(28):5407-12. doi: 10.1364/AO.48.005407. PMID: 19798382 [PubMed - in process]

  • Probing the microenvironment of surface-attached pyrene formed by a thermo-responsive oligomer. Lü F, Fang Y, Blanchard GJ. Spectrochim Acta A Mol Biomol Spectrosc. 2009 Sep 10. [Epub ahead of print] PMID: 19796986 [PubMed - as supplied by publisher]

  • Characterization of chemical bonding in ion-implanted polymers by means of mid-infrared reflectivity. Ivanov VG, Hadjichristov G, Faulques E. Appl Spectrosc. 2009 Sep;63(9):1022-6. PMID: 19796484 [PubMed - in process]

  • Effect of the Nd:YAG and the Er:YAG Laser on the Adhesive-Dentin Interface: A Scanning Electron Microscopy study. Ghiggi PC, Dall Agnol RJ, Júnior LH, Borges GA, Spohr AM. Photomed Laser Surg. 2009 Oct 1. [Epub ahead of print] PMID: 19795996 [PubMed - as supplied by publisher]

  • Fluorinated Silicon Surfaces under Mixed Surfactants: Resistance to Nonspecific Protein Adsorption for Biosensing. Hu K, Gao Y, Zhou W, Lian J, Li F, Chen Z. Langmuir. 2009 Oct 1. [Epub ahead of print] PMID: 19795867 [PubMed - as supplied by publisher]

 

 

 

 

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