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Silicon
Silicon information, including Technical Data, Safety Data and its high purity properties, research, applications and other useful facts are discussed below. Scientific facts such as the atomic structure, ionization energy, abundance on Earth, conductivity and thermal properties are included.

Silicon is one of man's most useful elements. It makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, being exceeded only by oxygen. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Silica, as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Silicon is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Ultra high purity silicon can be doped with boron ,gallium ,phosphorus , or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics and space-age industries. Hydrogenated amorphous silicon has shown promise in producing economical cells for converting solar energy into electricity. Silcones are important products of silicon. They range from liquids to hard, glasslike solids with many useful properties. Thin film deposition of Silicon Nanoparticle quantum dots on the polycrystalline silicon substrate of a photovoltaic (solar) cell increases voltage output as much as 60% by fluorescing the incoming light prior to capture.

Silicon facts, including appearance, CAS #, and molecular formula and safety data, research and properties are

 

  Hydrogen                                 Helium
  Lithium Beryllium                     Boron Carbon Nitrogen Oxygen Fluorine Neon
  Sodium Magnesium                     Aluminum Silicon Phosphorus Sulfur Chlorine Argon
  Potassium Calcium Scandium Titanium Vanadium Chromium Manganese Iron Cobalt Hydrogen Copper Zinc Gallium Germanium Arsenic Selenium Bromine Krypton
  Rubidium Strontium Yttrium Zirconium Niobium Molybdenum Technetium Ruthenium Rhodium Palladium Silver Cadmium Indium Tin Antimony Tellurium Iodine Xenon
  Cesium Barium Cerium Hafnium Tantalum Tungsten Rhenium Osmium Iridium Platinum Gold Mercury Thallium Lead Bismuth Polonium Astatine Radon
                                     
      Cerium Praseodymium Neodymium Promethium Samarium Europium Gadolinium Terbium Dysprosium Holmium Erbium Thulium Ytterbium Lutetium    
      Thorium Protactinium Uranium Neptunium Plutonium Americium Curium Berkelium Californium Einsteinium Fermium Mendelevium Nobelium Lawerencium    


(click on an element)
available for many specific states, forms and shapes on the product pages listed to the left. Elemental or metallic forms include pellets, rod, wire and granules for evaporation source material purposes. Nanoparticles and nanopowders provide ultra high surface area which nanotechnology research and recent experiments demonstrate function to create new and unique properties and benefits.

Oxides are available in forms including powders and dense pellets for such uses as optical coating and thin film applications. Oxides tend to be insoluble. Fluorides are another insoluble form for uses in which oxygen is undesirable such as metallurgy, chemical and physical vapor deposition and in some optical coatings. Silicon is available in soluble forms including chlorides, nitrates and acetates. These compounds are also manufactured as solutions at specified stoichiometries.

Silicon is a Block D, Group 14, Period 3 element. The electronic configuration is [Ne] 3s2 3p2. In its elemental form silicon's CAS number is 7440-21-3. The silicon atom has a radius of 117.6.pm and it's Van der Waals radius is 210.pm.

All elemental metals, compounds and solutions may be synthesized in ultra high purity (e.g. 99.999%) for laboratory standards, advanced electronic, metallurgy and optical materials and other high technology advantages. Information is provided for stable (non-radioactive) isotopes. Organo-Metallic Silicon compounds are soluble in organic or non-aqueous solvents. See Analytical Services for information on available certified chemical and physical analysis techniques including MS-ICP, X-Ray Diffraction, PSD and Surface Area (BET) analysis.

Silicon was first discovered by Jons Berzelius in 1823.

French Silicium German Silicium Italian Silicio Portuguese Silício Spanish Silicio Swedish Kisel

Abundance. The following table shows the abundance of silicon and each of its naturally occurring isotopes on Earth along with the atomic mass for each isotope.

Isotope
Atomic Mass
% Abundance on Earth
Si-28
27.976926533
92.23
Si-29
28.97649472
4.67
Si-30
29.97377022
3.10

Safety Data. The safety data for silicon metal, nanoparticles and its compounds can vary widely depending on the form. For potential hazard information, toxicity, and road, sea and air transportation limitations, such as DOT Hazard Class, DOT Number, EU Number, NFPA Health rating and RTECS Class, please see the specific material or compound referenced in the left margin.

Ionization Energy. The ionization energy for silicon (the least required energy to release a single electron from the atom in it's ground state in the gas phase) is stated in the following table:

1st Ionization Energy
786.52 kJ mol-1
2nd Ionization Energy
1577.15 kJ mol-1
3rd Ionization Energy
3231.61 kJ mol-1

Conductivity. As to silicon's electrical and thermal conductivity, the electrical conductivity measured as to electrical resistivity @ 20 ºC is 10 μΩcm and its electronegativities (or its ability to draw electrons relative to other elements) is 1.9. The thermal conductivity of silicon is 148 W m-1 K-1.

Thermal Properties. The melting point and boiling point for silicon are stated below. The following chart sets forth the heat of fusion, heat of vaporization and heat of atomization.

Heat of Fusion
39.6 kJ mol-1
Heat of Vaporization
383.3 kJ mol-1
Heat of Atomization
451.29 kJ mol-1

 
Formula Atomic Number Molecular Weight Electronegativity (Pauling) Density Melting Point
Boiling Point
Vanderwaals radius
Ionic radius Energy of first ionization
Si 14 28.0855 g.mol -1 1.8 2.33 g.cm-3 at 20 °C 1410 °C 3265 °C 0.132 nm 0.271 nm (-4) ; 0.041 (+4) 786.3 kJ.mol-1

PRODUCT CATALOG U.S. Operations Submicron & Nanopowder Tolling Ultra High Purity Sputtering Target Crystal Growth Rod, Plate, Powder, etc. Foil
 
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Recent Research & Development for Silicon

  • Metal patterning on silicon surface by site-selective electroless deposition through colloidal crystal templating. J Colloid Interface Sci. 2007 Oct 1; [Epub ahead of print]

  • Initial site of bile regurgitation following extrahepatic biliary obstruction in living rats. J Gastroenterol Hepatol. 2007 Nov;22(11):1983-92.

  • Analytical Performance of a Venturi-Assisted Array of Micromachined Ultrasonic Electrosprays Coupled to Ion Trap Mass Spectrometry for the Analysis of Peptides and Proteins. Anal Chem. 2007 Oct 3; [Epub ahead of print]

  • Silicon-based microfilters for whole blood cell separation. Biomed Microdevices. 2007 Oct 4; [Epub ahead of print]

  • The role of aluminium and silicon in the setting chemistry of glass ionomer cements. J Mater Sci Mater Med. 2007 Oct 4; [Epub ahead of print]

  • Thin films of SiO(2) and hydroxyapatite on titanium deposited by spray pyrolysis. J Mater Sci Mater Med. 2007 Oct 4; [Epub ahead of print]

  • Exploration of the use of novel SiO(2) nanocomposites doped with fluorescent Eu(3+)/sensitizer complex for latent fingerprint detection. Forensic Sci Int. 2007 Oct 1; [Epub ahead of print]

  • Implant surface analysis and microbiologic evaluation of failed implants retrieved from smokers. J Oral Implantol. 2007;33(4):232-8.

  • Assembly of nanosize metallic particles and molecular wires on electrode surfaces. Chem Commun (Camb). 2007 Oct 21;(39):3983-9. Epub 2007 May 29.

  • Characterization of the calcification of cardiac valve bioprostheses by environmental scanning electron microscopy and vibrational spectroscopy. J Microsc. 2007 Oct;228(Pt 1):62-77.

  • Remotely adjustable check-valves with an electrochemical release mechanism for implantable biomedical microsystems.
    Biomed Microdevices. 2007 Jan 25; [Epub ahead of print]

  • Implantable microscale neural interfaces.
    Biomed Microdevices. 2007 Jan 25; [Epub ahead of print]

  • Towards electrically conductive, self-healing materials.
    J R Soc Interface. 2007 Jan 3; [Epub ahead of print]

  • Skin capacitance imaging of acne lesions.
    Skin Res Technol. 2007 Feb;13(1):9-12.

  • Effects of charge and size on condensation of supersaturated water vapor on nanoparticles of SiO(2).
    J Chem Phys. 2007 Jan 21;126(3):034701.

  • Electronic Properties of Si and Ge Atoms Doped In Clusters: In(n)()Si(m)() and In(n)()Ge(m)().
    J Phys Chem A Mol Spectrosc Kinet Environ Gen Theory. 2007 Feb 1;111(4):573-7.

  • Molecular Recognition Forces between Immunoglobulin G and a Surface Protein Adhesin on Living Staphylococcus aureus.
    Langmuir. 2007 Jan 24; [Epub ahead of print]

  • Syntheses and X-ray Diffraction, Photochemical, and Optical Characterization of Cu(2)Si(x)()Sn(1-)(x)()S(3) (0.4 </= x </= 0.6) for Photovoltaic Applications.
    Inorg Chem. 2007 Jan 24; [Epub ahead of print]

  • Adsorption of Trimethoxysilane and of 3-Mercaptopropyltrimethoxysilane on Silica and on Silicon Wafers from Vapor Phase: An IR Study.
    Langmuir. 2007 Jan 23; [Epub ahead of print]

  • Comparison of Protein Surface Attachment on Untreated and Plasma Immersion Ion Implantation Treated Polystyrene: Protein Islands and Carpet.
    Langmuir. 2007 Jan 23; [Epub ahead of print]

 

 

 

 

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