American Elements Logo and U.S. Registered Trademark
Gallium Rod
High Purity Ga Rod
7440-55-3
Product
Product Code
Order or Specifications
99% Gallium Rod
GA-M-02-R
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99.9% Gallium Rod
GA-M-03-R
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99.99% Gallium Rod
GA-M-04-R
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99.999% Gallium Rod
GA-M-05-R
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American Elements specializes in producing high purity uniform shaped Gallium Rod with the highest possible density 99.9+% Ultra High Purity Metallic Rods and smallest possible average grain sizes for use in semiconductor, Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Our standard Rod sizes range from 1/8" x 1/8" to 1/4" x 1/4" and 3 mm diameter. We can also provide Rod outside this range and deposition materials for specific applications such as fuel cells and solar energy and for thin film deposition on glass or metal substrates. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics. We have a variety of standard sized rod molds.. See research below. We also produce Gallium as powder, ingot, pieces, pellets, disc, granules, wire, and in compound forms, such as oxide. Other shapes are available by request.

Gallium is a Block P, Group 13, Period 4 element. The electronic configuration is [Ar] 3d10 4s2 4p1. In its elemental form gallium's CAS number is 7440-55-3. The gallium atom has a radius of 122.1.pm and it's Van der Waals radius is 187.pm. Gallium is one of three elements that naturally occur as a liquid at room temperature. The other two are mercury and cesium. The application of gallium that has received the most attention is the production of semiconducting compounds. Of these, the most important are the compounds of gallium with antimony, arsenic or phosphor. Nowadays gallium arsenide (Ga-As) is undoubtedly the most used. This compound is used in the production of several electronic parts such as diodes and transistors, made for voltage rectification, signal amplification, etc. Other gallium arsenide applications are the semiconductor "lasing" and microwave generation and also in sensors to measure temperature, light or magnetic field.

Formula CAS No. Appearance Molecular Weight
Ga 7440-55-3 Silvery 69.72
PRODUCT CATALOG Submicron & Nanopowder Tolling Ultra High Purity Sputtering Target Crystal Growth Rod, Plate, Powder, etc.
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Recent Research & Development for Gallium

  • Convenient Synthesis of Aluminum and Gallium Phosphonate Cages. Inorg Chem. 2008 Mar 26; [Epub ahead of print]

  • Base free lithium-organoaluminate and the gallium congener: potential precursors to heterometallic assemblies. Chem Commun (Camb). 2007 Dec 14;(46):4934-6.

  • Formation of High-Mass Cluster Ions from Compound Semiconductors Using Time-of-Flight Secondary Ion Mass Spectrometry with Cluster Primary Ions. Anal Chem. 2008 Mar 22; [Epub ahead of print]

  • Detection of an Infected Abdominal Aortic Aneurysm With Three-Phase Bone Scan and Gallium-67 Scan. Clin Nucl Med. 2008 Apr;33(4):305-307.

  • Rapid formation of metal-organic nano-capsules gives new insight into the self-assembly process. Chem Commun (Camb). 2008 Apr 7;(13):1539-41. Epub 2008 Feb 27.

  • Off-axis refractive mass-transported gallium-phosphide microlens array for the reduction of distortion in an optical interconnect system. Appl Opt. 2000 Nov 10;39(32):6028-33.

  • Facile one-pot synthesis of 5-substituted hydantoins. Org Biomol Chem. 2008 Mar 21;6(6):988-91. Epub 2008 Feb 14.

  • Investigation on damage of DNA molecules under irradiation of low frequency ultrasound in the presence of hematoporphyrin-gallium (HP-Ga) complex. Ultrason Sonochem. 2008 Feb 5; [Epub ahead of print]

  • Radionuclide imaging of musculoskeletal infection: conventional agents. Semin Musculoskelet Radiol. 2007 Dec;11(4):335-52.

  • Synthesis and characterization of ZnO and ZnO:Ga films and their application in dye-sensitized solar cells. Dalton Trans. 2008 Mar 21;(11):1487-91. Epub 2008 Feb 12.

  • Spatial-mode control of vertical-cavity lasers with micromirrors fabricated and replicated in semiconductor materials. Appl Opt. 1999 May 10;38(14):3030-8.

  • Mass-transport fabrication of off-axis and prismatic gallium phosphide optics. Appl Opt. 1999 May 10;38(14):2979-85.

  • Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardment.

  • Resistance of planktonic and biofilm-grown Burkholderia cepacia complex isolates to the transition metal gallium. J Antimicrob Chemother. 2008 Feb 26; [Epub ahead of print]

  • Low-level laser therapy modulates cyclo-oxygenase-2 expression during bone repair in rats. Lasers Med Sci. 2008 Feb 29; [Epub ahead of print]

  • Mid-Infrared (5-12-mum) and Limited (5.5-8.5-mum) Single-Knob Tuning Generated by Difference-Frequency Mixing in Single-Crystal AgGaS(2). Appl Opt. 1999 Mar 20;38(9):1798-801.

  • Primary malignant fibrous histiocytoma of the thyroid: review of the literature with two new cases. Thyroid. 2008 Jan;18(1):51-5.

  • [Atypical peritoneal tuberculosis. Use of laparoscopy in the diagnosis] Rev Esp Enferm Dig. 2007 Dec;99(12):725-8. Spanish.

  • Medical treatment of malignancy-associated hypercalcemia. Curr Med Chem. 2008;15(4):415-21.

  • Finite-Element Analysis of Lossy TE-TM modes in Metal-Clad Optical Waveguides. Appl Opt. 1998 Aug 20;37(24):5747-54.

 

 

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