High performance visible-near-infrared PbS-quantum-dots/indium Schottky diodes for photodetectors.

Title High performance visible-near-infrared PbS-quantum-dots/indium Schottky diodes for photodetectors.
Authors L. Mi; H. Wang; Y. Zhang; X. Yao; Y. Chang; G. Li; G. Li; Y. Jiang
Journal Nanotechnology
DOI 10.1088/1361-6528/28/5/055202
Abstract

Here we fabricate self-powered photodetectors based on PbS-quantum-dots/indium Schottky barrier diodes successfully. These devices exhibit excellent repeatability and stability at a high frequency (up to1 MHz), and show a typical fast rise time/fall time of ?0.8 ?s/3.2 ?s. They also show excellent rectification ratios up to 10(4) with bias from -0.5 V to +0.5 V in the dark and a pronounced photovoltaic performance under light illumination. Moreover, the devices demonstrate high sensitivity in weak light illumination detection (detectivity) approaching 10(12) Jones and low noise currents <1 pAHz(-1/2). These findings suggest great application potential of PbS-quantum-dots for advanced fast response, low noise current, high detectivity and high stability photodetectors.

Citation L. Mi; H. Wang; Y. Zhang; X. Yao; Y. Chang; G. Li; G. Li; Y. Jiang.High performance visible-near-infrared PbS-quantum-dots/indium Schottky diodes for photodetectors.. Nanotechnology. 2017;28(5):055202. doi:10.1088/1361-6528/28/5/055202

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Indium

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Lead

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