Embedded tin nanocrystals in silicon-an electrical characterization.

Title Embedded tin nanocrystals in silicon-an electrical characterization.
Authors L. Scheffler; M.J. Haastrup; S. Roesgaard; J.L. Hansen; N. Larsen; B. Julsgaard
Journal Nanotechnology
DOI 10.1088/1361-6528/aaa066
Abstract

Tin nanocrystals embedded in a SiSn layer grown by molecular beam epitaxy on n-type Si are investigated by means of deep level transient spectroscopy. Two Sn related deep traps are observed, depending on the annealing temperature of the samples. A deep level at (Sn1) is observed for annealing temperatures up to C, whereas a level at (Sn2) appears for annealing temperatures above C. Scanning transmission electron microscopy shows the formation of Sn nanocrystals at C, which coincides with the appearance of Sn2. Sn1 is tentatively assigned to a Sn related precursor defect, which transforms upon annealing into either Sn nanocrystals or an interface defect located at the nanocrystal surface.

Citation L. Scheffler; M.J. Haastrup; S. Roesgaard; J.L. Hansen; N. Larsen; B. Julsgaard.Embedded tin nanocrystals in silicon-an electrical characterization.. Nanotechnology. 2018;29(5):055702. doi:10.1088/1361-6528/aaa066

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Tin

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Silicon

See more Silicon products. Silicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Elemental SiliconSilica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone.

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