Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon.

Title Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon.
Authors L. Chang; M.H.P. Pfeiffer; N. Volet; M. Zervas; J.D. Peters; C.L. Manganelli; E.J. Stanton; Y. Li; T.J. Kippenberg; J.E. Bowers
Journal Opt Lett
DOI 10.1364/OL.42.000803
Abstract

An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.

Citation L. Chang; M.H.P. Pfeiffer; N. Volet; M. Zervas; J.D. Peters; C.L. Manganelli; E.J. Stanton; Y. Li; T.J. Kippenberg; J.E. Bowers.Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon.. Opt Lett. 2017;42(4):803806. doi:10.1364/OL.42.000803

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