Monolithic Mid-infrared Integrated Photonics Using Silicon on Epitaxial Barium Titanate Thin Films.

Title Monolithic Mid-infrared Integrated Photonics Using Silicon on Epitaxial Barium Titanate Thin Films.
Authors T. Jin; L. Li; B.Zhang Bzha Zhang; H.Y.Greg Lin; H. Wang; P. Lin
Journal ACS Appl Mater Interfaces
DOI 10.1021/acsami.7b02681
Abstract

Broadband mid-Infrared (mid-IR) photonic circuits that integrate silicon waveguides and epitaxial barium titanate (BTO) thin films are demonstrated using the complementary metal-oxide-semiconductor (CMOS) process. The epitaxial BTO thin films are grown on lanthanum aluminate (LAO) substrates by pulsed laser deposition (PLD) technique, where a broad infrared transmittance between ? = 2.5 µm to ? = 7 um is observed. The optical waveguiding direction is defined by the high refractive index amorphous Si (a-Si) ridge structure developed on the BTO layer. Our waveguides show a sharp fundamental mode over broad mid-IR spectrum while its optical field distribution between the a-Si and the BTO layers can be modified by varying the height of the a-Si ridge. With the advantages of broad mid-IR transparency and the intrinsic electro-optic (E-O) property, our monolithic Si on ferroelectric BTO platform will enable tunable mid-IR microphotonics that is desired for high-speed optical logic gates and chip-scale biochemical sensors.

Citation T. Jin; L. Li; B.Zhang Bzha Zhang; H.Y.Greg Lin; H. Wang; P. Lin.Monolithic Mid-infrared Integrated Photonics Using Silicon on Epitaxial Barium Titanate Thin Films.. ACS Appl Mater Interfaces. 2017. doi:10.1021/acsami.7b02681

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