Organosilane-functionalization of nanostructured indium tin oxide films.

Title Organosilane-functionalization of nanostructured indium tin oxide films.
Authors R. Pruna; F. Palacio; M. Martínez; O. Blázquez; S. Hernández; B. Garrido; M. López
Journal Interface Focus
DOI 10.1098/rsfs.2016.0056

Fabrication and organosilane-functionalization and characterization of nanostructured ITO electrodes are reported. Nanostructured ITO electrodes were obtained by electron beam evaporation, and a subsequent annealing treatment was selectively performed to modify their crystalline state. An increase in geometrical surface area in comparison with thin-film electrodes area was observed by atomic force microscopy, implying higher electroactive surface area for nanostructured ITO electrodes and thus higher detection levels. To investigate the increase in detectability, chemical organosilane-functionalization of nanostructured ITO electrodes was performed. The formation of 3-glycidoxypropyltrimethoxysilane (GOPTS) layers was detected by X-ray photoelectron spectroscopy. As an indirect method to confirm the presence of organosilane molecules on the ITO substrates, cyclic voltammetry and electrochemical impedance spectroscopy (EIS) were also carried out. Cyclic voltammograms of functionalized ITO electrodes presented lower reduction-oxidation peak currents compared with non-functionalized ITO electrodes. These results demonstrate the presence of the epoxysilane coating on the ITO surface. EIS showed that organosilane-functionalized electrodes present higher polarization resistance, acting as an electronic barrier for the electron transfer between the conductive solution and the ITO electrode. The results of these electrochemical measurements, together with the significant difference in the X-ray spectra between bare ITO and organosilane-functionalized ITO substrates, may point to a new exploitable oxide-based nanostructured material for biosensing applications. As a first step towards sensing, rapid functionalization of such substrates and their application to electrochemical analysis is tested in this work. Interestingly, oxide-based materials are highly integrable with the silicon chip technology, which would permit the easy adaptation of such sensors into lab-on-a-chip configurations, providing benefits such as reduced size and weight to facilitate on-chip integration, and leading to low-cost mass production of microanalysis systems.

Citation R. Pruna; F. Palacio; M. Martínez; O. Blázquez; S. Hernández; B. Garrido; M. López.Organosilane-functionalization of nanostructured indium tin oxide films.. Interface Focus. 2016;6(6):20160056. doi:10.1098/rsfs.2016.0056

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See more Indium products. Indium (atomic symbol: In, atomic number: 49) is a Block P, Group 13, Period 5 element with an atomic weight of 114.818. The number of electrons in each of indium's shells is [2, 8, 18, 18, 3] and its electron configuration is [Kr] 4d10 5s2 5p1. The indium atom has a radius of 162.6 pm and a Van der Waals radius of 193 pm. Indium was discovered by Ferdinand Reich and Hieronymous Theodor Richter in 1863. Indium Bohr ModelIt is a relatively rare, extremely soft metal is a lustrous silvery gray and is both malleable and easily fusible. It has similar chemical properties to Elemental Indiumgallium such as a low melting point and the ability to wet glass. Fields such as optics and microelectronics that utilize semiconductor technology have wide uses for indium, especially in the form of Indiun Tin Oxide (ITO). Thin films of Copper Indium Gallium Selenide (CIGS) are used in high-performing solar cells. Indium's name is derived from the Latin word indicum, meaning violet.


Tin Bohr ModelSee more Tin products. Tin (atomic symbol: Sn, atomic number: 50) is a Block P, Group 14, Period 5 element with an atomic weight of 118.710. The number of electrons in each of tin's shells is 2, 8, 18, 18, 4 and its electron configuration is [Kr] 4d10 5s2 5p2. The tin atom has a radius of 140.5 pm and a Van der Waals radius of 217 pm.In its elemental form, tin has a silvery-gray metallic appearance. It is malleable, ductile and highly crystalline. High Purity (99.9999%) Tin (Sn) MetalTin has nine stable isotopes and 18 unstable isotopes. Under 3.72 degrees Kelvin, Tin becomes a superconductor. Applications for tin include soldering, plating, and such alloys as pewter. The first uses of tin can be dated to the Bronze Age around 3000 BC in which tin and copper were combined to make the alloy bronze. The origin of the word tin comes from the Latin word Stannum which translates to the Anglo-Saxon word tin. For more information on tin, including properties, safety data, research, and American Elements' catalog of tin products, visit the Tin element page.

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