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SILICIDE INFORMATION CENTER
AE Silicides ™

32.4 (A)/00.022


Hydrogen                                Helium  
Lithium Beryllium                     Boron Carbon Nitrogen Oxygen Fluorine Neon
Sodium Magnesium                     Aluminum Silicon Phosphorus Sulfur Chlorine Argon
Potassium Calcium Scandium Titanium Vanadium Chromium Manganese Iron Cobalt Nickel Copper Zinc Gallium Germanium Arsenic Selenium Bromine Krypton
Rubidium Strontium Yttrium Zirconium Niobium Molybdenum Technetium Ruthenium Rhodium Palladium Silver Cadmium Indium Tin Antimony Tellurium Iodine Xenon
Cesium Barium Lanthanum Hafnium Tantalum Tungsten Rhenium Osmium Iridium Platinum Gold Mercury Thallium Lead Bismuth Polonium Astatine Radon
Francium Radium Actinium Rutherfordium Dubnium Seaborgium Bohrium Hassium Meitnerium Darmstadtium Roentgenium Copernicium Ununtrium Ununquadium Ununpentium Ununhexium Ununseptium Ununoctium
                                   
    Cerium Praseodymium Neodymium Promethium Samarium Europium Gadolinium Terbium Dysprosium Holmium Erbium Thulium Ytterbium Lutetium    
    Thorium Protactinium Uranium Neptunium Plutonium Americium Curium Berkelium Californium Einsteinium Fermium Mendelevium Nobelium Lawerencium      

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Tantalum Silicide
Tantalum Silicide

A silicide is a compound that has silicon and one or more electropositive elements. Similar to borides and carbides, though structurally closer to borides than to carbides, the composition of silicides cannot be easily specified as covalent molecules. The chemical bonds in silicides range from conductive metal-like structures to covalent or ionic structures. Silicides of all non-transition metals, with exception of beryllium, have been described. Mercury, thallium, bismuth, and lead are nonmiscible with liquid silicon.

Na2Si and Ca2Si and other Group I silicides react with water to yielding hydrogen and/or silanes (which occur when silicides react with mineral acids). However transition metal silicides are usually inert to aqueous solutions of everything with except hydrofluoric acid; but they do react with more aggressive agents such as melted potassium hydroxide or fluorine and chlorine when red-hot.

Purities include 99%, 99.9%, 99.99%, 99.999% and 99.9999% which are sometimes referred to as 2N, 3N, 4N, 5N and 6N.

Physical properties may include nanopowder, nano particle, submicron, - 325 mesh, rod, foil, and high surface area bromide with particle distribution and particle size controlled and certified. We produce larger - 40 mesh, - 100 mesh, -200 mesh range sizes and < 0.5 mm, 2 mm, 5 mm and other mm size shot, granules, lump, flake and pieces, too.

American Elements maintains industrial scale production for all its silicide products.

American Elements will execute Non-Disclosure or Confidentiality Agreements to protect customer know-how.

Please select a Silicide Material from the table :

Barium Silicide
Boron Silicide (B4Si)
Boron Silicide (B6Si)
Calcium Silicide CaSi
Calcium Silicide CaSi2
Cerium Silicide
Chromium(III) Silicide Cr3Si
Chromium Silicide CrSi2
Cobalt Silicide
Copper Silicide
Dysprosium(II) Silicide
Erbium Silicide
Europium(II) Silicide
Gadolinium(II) Silicide

Hafnium Silicide
Holmium Silicide
Iridium Silicide
Ferrosilicon FeSi
Iron Silicide FeSi2
Lanthanum Silicide
Lutetium Silicide
Manganese Silicide
Magnesium Silicide
Molybdenum Silicide MoSi2
Molybdenum Silicide MoSi3
Neodymium Silicide
Nickel Silicide Ni2Si
Nickel Silicide NiSi2

Niobium Silicide NbSi2
Niobium Silicide Nb5Si3
Palladium Silicide
Platinum Silicide
Praseodymium Silicide
Rhenium Silicide
Samarium Silicide
Sodium Silicide
Strontium Silicide
Tantalum Silicide (TaSi2)
Tantalum Silicide (Ta5Si3)
Terbium(IV) Silicide
Thorium(IV) Silicide
Thulium Silicide

Titanium Silicide (TiSi2)
Titanium Silicide (Ti5Si3)
Tungsten Silicide (WSi2)
Tungsten Silicide (W5Si3)
Uranium Silicide
Vanadium Silicide
Vanadium(II) Silicide
Vanadium(IV) Silicide
Ytterbium(V) Silicide YbSi2
Ytterbium(V) Silicide Yb3Si5
Yttrium Silicide
Zirconium Silicide


French Siliciure German Silizid Italian Siliciuro Portuguese Siliceto Spanish Siliciuro 硅化物 シリサイド Swedish Silicide

 



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Recent Research & Development for Silicide

  • Force modulation for enhanced nanoscale electrical sensing. Koelmans WW, Sebastian A, Abelmann L, Despont M, Pozidis H. Nanotechnology. 2011 Sep 2;22(35):355706. Epub 2011 Aug 8. PMID: 21821873 [PubMed - in process]

  • Joule-Assisted Silicidation for Short-Channel Silicon Nanowire Devices. Mongillo M, Spathis P, Katsaros G, Gentile P, Sanquer M, De Franceschi S. ACS Nano. 2011 Aug 4. [Epub ahead of print] PMID: 21815658 [PubMed - as supplied by publisher]

  • Observations of Shape-Dependent Hydrogen Uptake Trajectories from Single Nanocrystals. Tang ML, Liu N, Dionne JA, Alivisatos AP. J Am Chem Soc. 2011 Aug 3. [Epub ahead of print] PMID: 21793566 [PubMed - as supplied by publisher]

  • Real-Time Observation of Impurity Diffusion in Silicon Nanowires. Holmberg VC, Collier KA, Korgel BA. Nano Lett. 2011 Jul 29. [Epub ahead of print] PMID: 21786784 [PubMed - as supplied by publisher]

  • Evaluation of two-dimensional strain distribution by STEM/NBD. Uesugi F, Hokazono A, Takeno S. Ultramicroscopy. 2011 Feb 1;111(8):995-998. [Epub ahead of print] PMID: 21740862 [PubMed - as supplied by publisher]

  • In situ observations of endotaxial growth of CoSi(2) nanowires on Si(110) using ultrahigh vacuum transmission electron microscopy. Bennett PA, Smith DJ, He Z, Reuter MC, Ellis AW, Ross FM. Nanotechnology. 2011 Jul 29;22(30):305606. Epub 2011 Jul 1. PMID: 21719973 [PubMed - in process]

  • Formation of silicon nanodots via ion beam sputtering of ultrathin gold thin film coatings on Si. El-Atwani O, Ortoleva S, Cimaroli A, Allain JP. Nanoscale Res Lett. 2011 May 31;6(1):403. PMID: 21711934 [PubMed - in process] Free Article

  • Scanning tip measurement for identification of point defects. Dózsa L, Molnár G, Raineri V, Giannazzo F, Ferencz J, Lányi S. Nanoscale Res Lett. 2011 Feb 14;6(1):140. PMID: 21711635 [PubMed - in process] Free Article

  • Properties of silicon dioxide layers with embedded metal nanocrystals produced by oxidation of Si:Me mixture. Novikau A, Gaiduk P, Maksimova K, Zenkevich A. Nanoscale Res Lett. 2011 Feb 16;6(1):148. PMID: 21711632 [PubMed - in process] Free Article

  • Nanoscale characterization of electrical transport at metal/3C-SiC interfaces. Eriksson J, Roccaforte F, Reshanov S, Leone S, Giannazzo F, Lonigro R, Fiorenza P, Raineri V. Nanoscale Res Lett. 2011 Feb 7;6(1):120. PMID: 21711619 [PubMed - in process] Free Article

  • Characterization of MHz pulse repetition rate femtosecond laser-irradiated gold-coated silicon surfaces. Sivakumar M, Venkatakrishnan K, Tan B. Nanoscale Res Lett. 2011 Jan 12;6(1):78. PMID: 21711595 [PubMed - in process] Free Article

  • The influence of surface oxide on the growth of metal/semiconductor nanowires. Lu KC, Wu WW, Ouyang H, Lin YC, Huang Y, Wang CW, Wu ZW, Huang CW, Chen LJ, Tu KN. Nano Lett. 2011 Jul 13;11(7):2753-8. Epub 2011 Jun 9. PMID: 21657260 [PubMed - in process]

  • Origin of step-like behavior in the Co/Si system. Sagdeo A, Rai S, Srivastava AK, Lodha GS, Rawat R, Le Guen K, Jonnard P. J Phys Condens Matter. 2011 Jun 22;23(24):246004. Epub 2011 May 26. PMID: 21613723 [PubMed - in process]

  • Crystalline structures and misfit strain inside Er silicide nanocrystals self-assembled on Si(001) substrates. Ding T, Wu Y, Song J, Li J, Huang H, Zou J, Cai Q. Nanotechnology. 2011 Jun 17;22(24):245707. Epub 2011 May 4. PMID: 21543833 [PubMed - in process]

  • The formation mechanism of cobalt silicide on silica from Co(SiCl3)(CO)4 by in situ Fourier transform infrared spectroscopy. Zhao A, Chen X, Guan J, Williams CT, Liang C. Phys Chem Chem Phys. 2011 May 28;13(20):9432-8. Epub 2011 Apr 11. PMID: 21483930 [PubMed - in process]

  • Manganese silicide nanowires on Si(001). Liu HJ, Owen JH, Miki K, Renner Ch. J Phys Condens Matter. 2011 May 4;23(17):172001. Epub 2011 Apr 8. PMID: 21474879 [PubMed - in process]

  • Synthesis of cobalt-based nanocrystal layer in silicon dioxide for nonvolatile memory applications. Yoon JH. J Nanosci Nanotechnol. 2011 Feb;11(2):1042-6. PMID: 21456136 [PubMed]

  • Retention characteristics of Schottky barrier tunneling transistor-nano floating gate memory with various side walls. Won S, Son D, Kim E, Kim J, Lee K, Park K. J Nanosci Nanotechnol. 2011 Jan;11(1):314-7. PMID: 21446446 [PubMed]

  • Probing the thermal decomposition behaviors of ultrathin HfO2 films by an in situ high temperature scanning tunneling microscope. Xue K, Wang L, An J, Xu J. Nanotechnology. 2011 May 13;22(19):195705. Epub 2011 Mar 23. PMID: 21430314 [PubMed - indexed for MEDLINE]

  • Enhancing the superconducting transition temperature of BaSi2 by structural tuning. Flores-Livas JA, Debord R, Botti S, San Miguel A, Marques MA, Pailhčs S. Phys Rev Lett. 2011 Feb 25;106(8):087002. Epub 2011 Feb 22. PMID: 21405591 [PubMed]



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