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Indium Foil

High Purity In Foil
CAS 7440-74-6


Product Product Code Request Quote
(2N) 99% Indium Foil IN-M-02-F Request Quote
(2N5) 99.5% Indium Foil IN-M-025-F Request Quote
(3N) 99.9% Indium Foil IN-M-03-F Request Quote
(3N5) 99.95% Indium Foil IN-M-035-F Request Quote
(4N) 99.99% Indium Foil IN-M-04-F Request Quote
(5N) 99.999% Indium Foil IN-M-05-F Request Quote

CHEMICAL
IDENTIFIER
Formula CAS No. PubChem SID PubChem CID MDL No. EC No Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
In 7440-74-6 24855907 N/A MFCD00134048 231-180-0 N/A [In] InChI=1S/In APFVFJFRJDLVQX-UHFFFAOYSA-N

PROPERTIES Mol. Wt. Appearance Density Tensile Strength Melting Point Boiling Point Thermal Conductivity Electrical Resistivity Eletronegativity Specific Heat Heat of Vaporization Heat of Fusion MSDS
114.82 N/A 7310 kg/m³ N/A 156.6 °C 2080°C 0.818 W/cm/K @ 298.2 K 8.37 microhm-cm @ 20°C 1.7 Paulings 0.056 Cal/g/K @ 25°C 53.7 K-Cal/gm atom at 2080 °C 0.781 Cal/gm mole Safety Data Sheet

American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopeia/British Pharmacopeia) and follows applicable ASTM testing standards.See safety data and research below and pricing/lead time above. American Elements specializes in producing Indium High Purity Foil and sheets in many thicknesses and sizes for numerous industrial uses and provides health and occupational safety information for this product. Most foils are produced from cast Ingots for use in coating and thin film Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Ultra High Purity (99.9+%) thin film foilThermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Organometallic and Chemical Vapor Deposition (MOCVD) for specific applications such as fuel cells and solar energy. Thickness can range from 0.003" to approximately 2mm for all metals. Some metals can also be rolled down as thin as 0.001” for use as an evaporation source in microelectronics, optics, magnetics, MEMS, and hard resistant coatings. Piece sizes are available up to approximately 7" maximum width. Maximum lengths of about 20" can be obtained with a nominal thickness between about 0.005" and 0.020" for thin film deposition on glass or metal substrates. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar, or plate form, as well as other machined shapes and through other processes such as nanoparticles () and in the form of solutions and organometallics. We also produce Indium as rods, powder and plates. Other shapes are available by request.

Indium (In) atomic and molecular weight, atomic number and elemental symbolIndium (atomic symbol: In, atomic number: 49) is a Block P, Group 13, Period 5 element with an atomic weight of 114.818. The number of electrons in each of indium's shells is [2, 8, 18, 18, 3] and its electron configuration is [Kr] 4d10 5s2 5p1. The indium atom has a radius of 162.6 pm and a Van der Waals radius of 193 pm. Indium was discovered by Ferdinand Reich and Hieronymous Theodor Richter in 1863. Indium Bohr Model It is a relatively rare, extremely soft metal is a lustrous silvery Elemental Indium gray and is both malleable and easily fusible. It has similar chemical properties to gallium such as a low melting point and the ability to wet glass. Fields such as optics and microelectronics that utilize semiconductor technology have wide uses for indium, especially in the form of Indiun Tin Oxide (ITO). Thin films of Copper Indium Gallium Selenide (CIGS) are used in high-performing solar cells. Indium's name is derived from the Latin word indicum, meaning violet. For more information on indium, including properties, safety data, research, and American Elements' catalog of indium products, visit the Indium element page.

HEALTH, SAFETY & TRANSPORTATION INFORMATION
Warning
H302-H312-H315-H319-H332-H335
Xn
20/21/22-36/37/38
26-36
NL1050000
N/A
3
Exclamation Mark-Acute Toxicity        

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PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


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Recent Research & Development for Indium

  • Iron- and Indium-Catalyzed Reactions toward Nitrogen- and Oxygen-Containing Saturated Heterocycles. Johan Cornil, Laurine Gonnard, Charlélie Bensoussan, Anna Serra-Muns, Christian Gnamm, Claude Commandeur, Malgorzata Commandeur, Sébastien Reymond, Amandine Guérinot, and Janine Cossy. Acc. Chem. Res.: February 12, 2015
  • On the Electronic Structures and Transport Properties of n-Type Doped Indium oxides. Zhangxian Chen, Liang Huang, Qingfan Zhang, Yongjie Xi, Ran Li, Wanchao Li, Guo Qin Xu, and Hansong Cheng. J. Phys. Chem. C: February 10, 2015
  • Nanoscale Optical Properties of Indium Gallium Nitride/Gallium Nitride Nanodisk-in-Rod Heterostructures. Xiang Zhou, Ming-Yen Lu, Yu-Jung Lu, Eric J. Jones, Shangjr Gwo, and Silvija Gradeak. ACS Nano: February 7, 2015
  • Constructing Crystalline Heterometallic Indium–Organic Frameworks by the Bifunctional Method. Jinjie Qian, Feilong Jiang, Kongzhao Su, Jie Pan, Linfeng Liang, Feifei Mao, and Maochun Hong. Crystal Growth & Design: February 2, 2015
  • Influence of Source and Drain Contacts on the Properties of Indium–Gallium–Zinc-Oxide Thin-Film Transistors based on Amorphous Carbon Nanofilm as Barrier Layer. Dongxiang Luo, Hua Xu, Mingjie Zhao, Min Li, Miao Xu, Jianhua Zou, Hong Tao, Lei Wang, and Junbiao Peng. ACS Appl. Mater. Interfaces: January 26, 2015
  • Efficient Chemisorption of Organophosphorous Redox Probes on Indium Tin Oxide Surfaces under Mild Conditions. Amélie Forget, Benoît Limoges, and Véronique Balland. Langmuir: January 22, 2015
  • Photoinduced Carrier Dynamics of Nearly Stoichiometric Oleylamine-Protected Copper Indium Sulfide Nanoparticles and Nanodisks. Masanori Sakamoto, Lihui Chen, Makoto Okano, David M. Tex, Yoshihiko Kanemitsu, and Toshiharu Teranishi. J. Phys. Chem. C: January 19, 2015
  • Electrochemical Modification of Indium Tin Oxide Using Di(4-nitrophenyl) Iodonium Tetrafluoroborate. Matthew R. Charlton, Kristin J. Suhr, Bradley J. Holliday, and Keith J. Stevenson. Langmuir: December 19, 2014
  • Dehydrative Thiolation of Allenols: Indium vs Gold Catalysis. S. Webster, P. C. Young, G. Barker, G. M. Rosair, and A.-L. Lee. J. Org. Chem.: December 18, 2014
  • DNA Adsorption by Indium Tin Oxide Nanoparticles. Biwu Liu and Juewen Liu. Langmuir: December 18, 2014