Skip to Page Content

Silicon Carbide Nitride Nanoparticles

SiC-Si3N4


Product Product Code Request Quote
(2N) 99% Silicon Carbide Nitride Nanoparticles SI-CN-02-NP Request Quote
(3N) 99.9% Silicon Carbide Nitride Nanoparticles SI-CN-03-NP Request Quote
(4N) 99.99% Silicon Carbide Nitride Nanoparticles SI-CN-04-NP Request Quote
(5N) 99.999% Silicon Carbide Nitride Nanoparticles SI-CN-05-NP Request Quote

Nitride IonHigh Purity, D50 = +10 nanometer (nm) by SEMSilicon Carbide Nitride Nanoparticles, whiskers, nanodots or nanopowder are spherical high surface area particles. Nanoscale Nitride Bonded Silicon Carbide particles are typically 10 - 150 nanometers (nm) with specific surface area (SSA) in the 10 - 75 m 2 /g range. Nano Silicon Carbide Particles are also available in ultra high purity and high purity and coated and dispersed forms. They are also available as a nanofluid through the AE Nanofluid production group. Nanofluids are generally defined as suspended nanoparticles in solution either using surfactant or surface charge technology. Nanofluid dispersion and coating selection technical guidance is also available. Other nanostructures include nanorods, nanowhiskers, nanohorns, nanopyramids and other nanocomposites. Surface functionalized nanoparticles allow for the particles to be preferentially adsorbed at the surface interface using chemically bound polymers.

Silicon (Si) atomic and molecular weight, atomic number and elemental symbolSilicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Elemental Silicon Silica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone. For more information on silicon, including properties, safety data, research, and American Elements' catalog of silicon products, visit the Silicon element page.

Carbon(C)atomic and molecular weight, atomic number and elemental symbolCarbon is a Block P, Group 12, Period 2 element. Carbon Bohr ModelThe number of electrons in each of Carbon's shells is 2, 4 and its electron configuration is [He] 2s2 2p2. In its elemental form, carbon's CAS number is 7440-44-0. Carbon is at the same time one of the softest (graphite) and hardest (diamond) materials found in nature. It is the 15th most abundant element in the Earth's crust, and the fourth most abundant element (by mass) in the universe after hydrogen, helium, and oxygen. Carbon was discovered by the Egyptians and Sumerians circa 3750 BC. It was first recognized as an element by Antoine Lavoisierby in 1789. For more information on carbon, including properties, safety data, research, and American Elements' catalog of carbon products, visit the Carbon element page.


CUSTOMERS FOR SILICON CARBIDE NITRIDE NANOPARTICLES HAVE ALSO LOOKED AT
Silicon Chloride Silicon Foil Aluminium Silicon Magnesium Alloy Silicon Nanoparticles Silicon Pellets
Silicon Fluoride Silicon Metal Silicon Acetate Solution Silicon 2 - Ethylhexanoate Silicon Oxide Pellets
Calcium Silicon Alloy Silicon Oxide Silicon Nanoparticles Silicon Sputtering Target Silicon Wire
Show Me MORE Forms of Silicon

PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


Have a Question? Ask a Chemical Engineer or Material Scientist
Request an MSDS or Certificate of Analysis

Recent Research & Development for Silicon

  • Gradient poly(styrene-co-polyglycidol) grafts via silicon surface-initiated AGET ATRP. Gosecka M, Pietrasik J, Decorse P, Glebocki B, Chehimi MM, Slomkowski S, Basinska T. Langmuir. 2015 Apr 14. : Langmuir
  • Lithiation of Silicon Nanoparticles Confined in Carbon Nanotubes. Yu WJ, Liu C, Hou PX, Zhang L, Shan XY, Li F, Cheng HM. ACS Nano. 2015 Apr 13. : ACS Nano
  • Origins of conductivity improvement in fluoride-enhanced silicon doping of ZnO films. Rashidi N, Vai AT, Kuznetsov VL, Dilworth JR, Edwards PP. Chem Commun (Camb). 2015 Apr 16. : Chem Commun (Camb)
  • The photodynamic antibacterial effects of silicon phthalocyanine (pc) 4. Dimaano ML, Rozario C, Nerandzic MM, Donskey CJ, Lam M, Baron ED. Int J Mol Sci. 2015 Apr 8: Int J Mol Sci
  • Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition. Jia E, Zhou C, Wang W. Nanoscale Res Lett. 2015 Mar 13: Nanoscale Res Lett
  • High-Speed GaN/GaInN nanowire array LED on Silicon (111). Köster R, Sager D, Quitsch WA, Pfingsten O, Poloczek A, Blumenthal S, Keller G, Prost W, Bacher G, Tegude FJ. Nano Lett. 2015 Mar 10.
  • Carbon p Electron Ferromagnetism in Silicon Carbide. Wang Y, Liu Y, Wang G, Anwand W, Jenkins CA, Arenholz E, Munnik F, Gordan OD, Salvan G, Zahn DR, Chen X, Gemming S, Helm M, Zhou S. Sci Rep. 2015 Mar 11
  • Complete magnesiothermic reduction reaction of vertically aligned mesoporous silica channels to form pure silicon nanoparticles. Kim KH, Lee DJ, Cho KM, Kim SJ, Park JK, Jung HT. Sci Rep. 2015 Mar 11
  • Comparative toxicity of silicon dioxide, silver and iron oxide nanoparticles after repeated oral administration to rats. Yun JW, Kim SH, You JR, Kim WH, Jang JJ, Min SK, Kim HC, Chung DH, Jeong J, Kang BC, Che JH. J Appl Toxicol. 2015 Mar 6.
  • Sub-Parts Per Million NO2 Chemi-Transistor Sensors Based on Composite Porous Silicon/Gold Nanostructures Prepared by Metal-Assisted Etching. Sainato M, Strambini LM, Rella S, Mazzotta E, Barillaro G. ACS Appl Mater Interfaces. 2015 Mar 16.

Recent Research & Development for Carbides

  • Porous molybdenum carbide nano-octahedrons synthesized via confined carburization in metal-organic frameworks for efficient hydrogen production. Wu HB, Xia BY, Yu L, Yu XY, Lou XW. Nat Commun. 2015 Mar 11: Nat Commun
  • Carbon p Electron Ferromagnetism in Silicon Carbide. Wang Y, Liu Y, Wang G, Anwand W, Jenkins CA, Arenholz E, Munnik F, Gordan OD, Salvan G, Zahn DR, Chen X, Gemming S, Helm M, Zhou S. Sci Rep. 2015 Mar 11: Sci Rep
  • Nanostructured vanadium carbide thin films produced by RF magnetron sputtering. Pat S, Korkmaz Ş. Scanning. 2015 Mar 30.: Scanning
  • A metallic superhard boron carbide: first-principles calculations. Ma M, Yang B, Li Z, Hu M, Wang Q, Cui L, Yu D, He J. Phys Chem Chem Phys. 2015 Apr 1: Phys Chem Chem Phys
  • Two-Dimensional Titanium Carbide for Efficiently Reductive Removal of Highly Toxic Chromium(VI) from Water. Ying Y, Liu Y, Wang X, Mao Y, Cao W, Hu P, Peng X. ACS Appl Mater Interfaces. 2015 Jan 28
  • Porous molybdenum carbide nano-octahedrons synthesized via confined carburization in metal-organic frameworks for efficient hydrogen production. Wu HB, Xia BY, Yu L, Yu XY, Lou XW. Nat Commun. 2015 Mar 11
  • Carbon p Electron Ferromagnetism in Silicon Carbide. Wang Y, Liu Y, Wang G, Anwand W, Jenkins CA, Arenholz E, Munnik F, Gordan OD, Salvan G, Zahn DR, Chen X, Gemming S, Helm M, Zhou S. Sci Rep. 2015 Mar 11
  • Meso/Macroporous Nitrogen-Doped Carbon Architectures with Iron Carbide Encapsulated in Graphitic Layers as an Efficient and Robust Catalyst for the Oxygen Reduction Reaction in Both Acidic and Alkaline Solutions. Xiao M, Zhu J, Feng L, Liu C, Xing W. Adv Mater. 2015 Mar 10.
  • A metallic superhard boron carbide: first-principles calculations. Ma M, Yang B, Li Z, Hu M, Wang Q, Cui L, Yu D, He J. Phys Chem Chem Phys. 2015 Mar 16.
  • Monitoring the thin film formation during sputter deposition of vanadium carbide. Kaufholz M, Krause B, Kotapati S, Köhl M, Mantilla MF, Stüber M, Ulrich S, Schneider R, Gerthsen D, Baumbach T. J Synchrotron Radiat. 2015 Jan

Recent Research & Development for Nitrides

  • Phosphorus-Modified Tungsten Nitride/Reduced Graphene Oxide as a High-Performance, Non-Noble-Metal Electrocatalyst for the Hydrogen Evolution Reaction. Yan H, Tian C, Wang L, Wu A, Meng M, Zhao L, Fu H. Angew Chem Int Ed Engl. 2015 Mar 30.: Angew Chem Int Ed Engl
  • The unexpected non-monotonic inter-layer bonding dependence of the thermal conductivity of bilayered boron nitride. Gao Y, Zhang X, Jing Y, Hu M. Nanoscale. 2015 Apr 9: Nanoscale
  • Artificial nacre-like papers based on noncovalent functionalized boron nitride nanosheets with excellent mechanical and thermally conductive properties. Zeng X, Ye L, Yu S, Li H, Sun R, Xu J, Wong CP. Nanoscale. 2015 Apr 2: Nanoscale
  • In vivo biocompatibility of boron nitride nanotubes: Effects on stem cell biology and tissue regeneration in planarians. Salvetti A, Rossi L, Iacopetti P, Li X, Nitti S, Pellegrino T, Mattoli V, Golberg D, Ciofani G. Nanomedicine (Lond). 2015 Apr 2: Nanomedicine (Lond)
  • In situ synthesis of a large area boron nitride/graphene monolayer/boron nitride film by chemical vapor deposition. Wu Q, Jang SK, Park S, Jung SJ, Suh H, Lee YH, Lee S, Song YJ. Nanoscale. 2015 Apr 13. : Nanoscale
  • Mesoporous Carbon Nitride-Tungsten Oxide Composites for Enhanced Photocatalytic Hydrogen Evolution. Kailasam K, Fischer A, Zhang G, Zhang J, Schwarze M, Schröder M, Wang X, Schomäcker R, Thomas A. ChemSusChem. 2015 Mar 20.: ChemSusChem
  • Migrations of pentagon-heptagon defects in hexagonal boron nitride monolayer: the first-principles study. Wang J, Li SN, Liu JB. J Phys Chem A. 2015 Apr 16: J Phys Chem A
  • Bipolar doping of double-layer graphene vertical heterostructures with hydrogenated boron nitride. Liu Z, Wang RZ, Liu LM, Lau WM, Yan H. Phys Chem Chem Phys. 2015 Apr 13. : Phys Chem Chem Phys
  • Oscillatory motion in layered materials: graphene, boron nitride, and molybdenum disulfide. Ye Z, Otero-de-la-Roza A, Johnson ER, Martini A. Nanotechnology. 2015 Apr 24: Nanotechnology
  • Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructures. Gao T, Song X, Du H, Nie Y, Chen Y, Ji Q, Sun J, Yang Y, Zhang Y, Liu Z. Nat Commun. 2015 Apr 14: Nat Commun