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Silicon Carbide Nitride Nanoparticles


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(2N) 99% Silicon Carbide Nitride Nanoparticles SI-CN-02-NP Request Quote
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Nitride IonHigh Purity, D50 = +10 nanometer (nm) by SEMSilicon Carbide Nitride Nanoparticles, whiskers, nanodots or nanopowder are spherical high surface area particles. Nanoscale Nitride Bonded Silicon Carbide particles are typically 10 - 150 nanometers (nm) with specific surface area (SSA) in the 10 - 75 m 2 /g range. Nano Silicon Carbide Particles are also available in ultra high purity and high purity and coated and dispersed forms. They are also available as a nanofluid through the AE Nanofluid production group. Nanofluids are generally defined as suspended nanoparticles in solution either using surfactant or surface charge technology. Nanofluid dispersion and coating selection technical guidance is also available. Other nanostructures include nanorods, nanowhiskers, nanohorns, nanopyramids and other nanocomposites. Surface functionalized nanoparticles allow for the particles to be preferentially adsorbed at the surface interface using chemically bound polymers.

Silicon (Si) atomic and molecular weight, atomic number and elemental symbolSilicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Elemental Silicon Silica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone. For more information on silicon, including properties, safety data, research, and American Elements' catalog of silicon products, visit the Silicon element page.

Carbon(C)atomic and molecular weight, atomic number and elemental symbolCarbon is a Block P, Group 12, Period 2 element. Carbon Bohr ModelThe number of electrons in each of Carbon's shells is 2, 4 and its electron configuration is [He] 2s2 2p2. In its elemental form, carbon's CAS number is 7440-44-0. Carbon is at the same time one of the softest (graphite) and hardest (diamond) materials found in nature. It is the 15th most abundant element in the Earth's crust, and the fourth most abundant element (by mass) in the universe after hydrogen, helium, and oxygen. Carbon was discovered by the Egyptians and Sumerians circa 3750 BC. It was first recognized as an element by Antoine Lavoisierby in 1789. For more information on carbon, including properties, safety data, research, and American Elements' catalog of carbon products, visit the Carbon element page.

Silicon Chloride Silicon Foil Aluminium Silicon Magnesium Alloy Silicon Nanoparticles Silicon Pellets
Silicon Fluoride Silicon Metal Silicon Acetate Solution Silicon 2 - Ethylhexanoate Silicon Oxide Pellets
Calcium Silicon Alloy Silicon Oxide Silicon Nanoparticles Silicon Sputtering Target Silicon Wire
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Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.

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Recent Research & Development for Silicon

  • Magnetic and Electric Hotspots with Silicon Nanodimers. Reuben M Bakker, Dmitry Permyakov, Ye Feng Yu, Dmitry Markovich, Ramón Paniagua-Domínguez, Leonard Gonzaga, Anton Samusev, Yuri S. Kivshar, Boris Luk`yanchuk, and Arseniy I. Kuznetsov. Nano Lett.: February 16, 2015
  • Role of Interfacial Oxide in High-Efficiency Graphene-Silicon Schottky Barrier Solar Cells. Yi Song, Xinming Li, Charles Mackin, Xu Zhang, Wenjing Fang, Tomas Palacios, Hongwei Zhu, and Jing Kong. Nano Lett.: February 16, 2015
  • Directional Fano Resonance in a Silicon Nanosphere Dimer. Jiahao Yan, Pu Liu, Zhaoyong Lin, Hao Wang, Huanjun Chen, Chengxin Wang, and Guowei Yang. ACS Nano: February 15, 2015
  • Tuning the Polymerization Behavior of Silicon-Bridged [1]Ferrocenophanes Using Bulky Substituents. Rebecca A. Musgrave, Andrew D. Russell, George R. Whittell, Mairi F. Haddow, and Ian Manners. Organometallics: February 13, 2015
  • Soft porous silicon rubbers as key elements for the realization of acoustic metamaterials. Kevin Zimny, Aurore Merlin, BA Sidiki Abdoulaye, Christophe Aristégui, Thomas Brunet, and Olivier Mondain-Monval. Langmuir: February 12, 2015
  • Highly Sensitive and Selective Detection of Dopamine Using One-Pot Synthesized Highly Photoluminiscent Silicon Nanoparticles. Xiaodong Zhang, Xiaokai Chen, Siqi Kai, Hong-Yin Wang, Jingjing Yang, Fu-Gen Wu, and Zhan Chen. Anal. Chem.: February 11, 2015
  • The Role of Silicon Nanowire Diameter for Alkyl (chain lengths: C1-C18) Passivation Efficiency through Si-C Bonds. Muhammad Y. Bashouti, Carmelina A. Garzuzi, María de la Mata, Jordi Arbiol, Juergen Ristein, Hossam Haick, and Silke Christiansen. Langmuir: February 10, 2015
  • Shape-dependent light scattering properties of subwavelength silicon nanoblocks. Ho-Seok Ee, Ju-Hyung Kang, Mark Brongersma, and Min-Kyo Seo. Nano Lett.: February 10, 2015
  • Characterization of alkylsilane self-assembled monolayers on silicon by molecular simulation. Juan Manuel Castillo, Mischa Klos, Karin Jacobs, Martin Horsch, and Hans Hasse. Langmuir: February 10, 2015
  • Higher Ionization Energies from Sequential Vacuum-Ultraviolet Multiphoton Ionization of Size-Selected Silicon Cluster Cations. Christian Kasigkeit, Konstantin Hirsch, Andreas Langenberg, Thomas Moller, Jürgen Probst, Jochen Rittmann, Marlene Vogel, Jörg Wittich, Vicente Zamudio-Bayer, Bernd von Issendorff, and J. Tobias Lau. J. Phys. Chem. C: February 9, 2015

Recent Research & Development for Carbides

  • Two-Dimensional Titanium Carbide for Efficiently Reductive Removal of Highly Toxic Chromium(VI) from Water. Yulong Ying, Yu Liu, Xinyu Wang, Yiyin Mao, Wei Cao, Pan Hu, and Xinsheng Peng. ACS Appl. Mater. Interfaces: January 5, 2015
  • Continuous-Mode Laser Ablation at the Solid–Liquid Interface of Pelletized Low-Cost Materials for the Production of Luminescent Silicon Carbide Nanocrystals. M. Carmen Ortega-Liébana, José L. Hueso, Raul Arenal, Ruth Lahoz, Germán F. de la Fuente, and Jesús Santamaría. J. Phys. Chem. C: December 23, 2014
  • Structural Evolutions in Polymer-Derived Carbon-Rich Amorphous Silicon Carbide. Kewei Wang, Baisheng Ma, Xuqin Li, Yiguang Wang, and Linan An. J. Phys. Chem. A: December 9, 2014
  • Macroscopic Approach to the Nucleation and Propagation of Foreign Polytype Inclusions during Seeded Sublimation Growth of Silicon Carbide. Nikolaos Tsavdaris, Kanaparin Ariyawong, Jean-Marc Dedulle, Eirini Sarigiannidou, and Didier Chaussende. Crystal Growth & Design: December 4, 2014
  • Nanocasting Hierarchical Carbide-Derived Carbons in Nanostructured Opal Assemblies for High-Performance Cathodes in Lithium–Sulfur Batteries. Claudia Hoffmann, Sören Thieme, Jan Brückner, Martin Oschatz, Tim Biemelt, Giovanni Mondin, Holger Althues, and Stefan Kaskel. ACS Nano: November 29, 2014
  • Interaction Between Silicon–Carbide Nanotube and Cholesterol Domain. A Molecular Dynamics Simulation Study.. Przemys?aw Raczy?ski, Krzysztof Górny, Jannis Samios, and Zygmunt Gburski. J. Phys. Chem. C: November 25, 2014
  • In Situ Formation of Nanoparticle Titanium Carbide/Nitride Shaped ceramics from Meltable Precursor Composition. Teddy M. Keller, Matthew Laskoski, Andrew P. Saab, Syed B. Qadri, and Manoj Kolel-Veetil. J. Phys. Chem. C: November 14, 2014
  • Silicon Carbide with Uniformly Sized Spherical Mesopores from Butoxylated Silica Nanoparticles Template. Sergei A. Alekseev, Dmytro M. Korytko, Svitlana V. Gryn, Viacheslav Iablokov, Olena A. Khainakova, Santiago Garcia-Granda, and Norbert Kruse. J. Phys. Chem. C: September 16, 2014
  • Silicene on Zirconium Carbide. Takashi Aizawa, Shigeru Suehara, and Shigeki Otani. J. Phys. Chem. C: September 15, 2014
  • Tailoring the Properties of Atomic Layer Deposited Nickel and Nickel Carbide Thin Films via Chain-Length Control of the Alcohol Reducing Agents. Mouhamadou Sarr, Naoufal Bahlawane, Didier Arl, Manuel Dossot, Edward McRae, and Damien Lenoble. J. Phys. Chem. C: September 10, 2014

Recent Research & Development for Nitrides

  • Alloyed Co-Mo Nitride as High-performance Electrocatalyst for Oxygen Reduction in Acidic Medium. Tao Sun, Qiang Wu, Renchao Che, Yongfeng Bu, Yufei Jiang, Yi Li, Lijun Yang, Xizhang Wang, and Zheng Hu. ACS Catal.: February 12, 2015
  • Improving the Quality of GaN Crystals by using Graphene or Hexagonal Boron Nitride Nanosheets Substrate. Lei Zhang, Xianlei Li, Yongliang Shao, Jiaoxian Yu, Yongzhong Wu, Xiaopeng Hao, Zhengmao Yin, Yuanbin Dai, Yuan Tian, Qin Huo, Yinan Shen, Zhen Hua, and Baoguo Zhang. ACS Appl. Mater. Interfaces: February 9, 2015
  • Nanoscale Optical Properties of Indium Gallium Nitride/Gallium Nitride Nanodisk-in-Rod Heterostructures. Xiang Zhou, Ming-Yen Lu, Yu-Jung Lu, Eric J. Jones, Shangjr Gwo, and Silvija Gradeak. ACS Nano: February 7, 2015
  • The Nitridomagnesosilicate Ba[Mg3SiN4]:Eu2+ and Structure-Property Relations of Similar Narrow Band Red Nitride Phosphors. Sebastian Schmiechen, Philipp Strobel, Cora Hecht, Thomas Reith, Markus Siegert, Peter J Schmidt, Petra Huppertz, Detlef U Wiechert, and Wolfgang Schnick. Chem. Mater.: February 5, 2015
  • Phosphotungstic Acid Supported on Mesoporous Graphitic Carbon Nitride as Catalyst for Oxidative Desulfurization of Fuel. Yunfeng Zhu, Mingyuan Zhu, Lihua Kang, Feng Yu, and Bin Dai. Ind. Eng. Chem. Res.: February 4, 2015
  • Switch-on Fluorescence Sensing of Glutathione in Food Samples Based on a Graphitic Carbon Nitride Quantum Dot (g-CNQD)–Hg2+ Chemosensor. Yali Xu, Xiaoying Niu, Haijuan Zhang, Laifang Xu, Shengguo Zhao, Hongli Chen, and Xingguo Chen. J. Agric. Food Chem.: January 28, 2015
  • Alkyl-Chain-Grafted Hexagonal Boron Nitride Nanoplatelets as Oil-Dispersible Additives for Friction and Wear Reduction. Sangita Kumari, Om P. Sharma, Rashi Gusain, Harshal P. Mungse, Aruna Kukrety, Niranjan Kumar, Hiroyuki Sugimura, and Om P. Khatri. ACS Appl. Mater. Interfaces: January 27, 2015
  • Polymorphic Behavior and Enzymatic Degradation of Poly(butylene adipate) in the Presence of Hexagonal Boron Nitride Nanosheets. Yi-Ren Tang, Jun Xu, and Bao-Hua Guo. Ind. Eng. Chem. Res.: January 26, 2015
  • B-N Bond Cleavage and BN Ring Expansion at the Surface of Boron Nitride Nanotubes by Iminoborane. Rajashabala Sundaram, Steve Scheiner, Ajit K. Roy, and Tapas Kar. J. Phys. Chem. C: January 20, 2015
  • Facile Synthesis and High Rate Capability of Silicon Carbonitride/Boron Nitride Composite with a Sheet-Like Morphology. Lamuel David, Samuel Bernard, Christel Gervais, Philippe Miele, and Gurpreet Singh. J. Phys. Chem. C: January 13, 2015