Silicon Chunk

High Purity Si Chunk
CAS 7440-21-3


Product Product Code Order or Specifications
(2N) 99% Silicon Chunk SI-M-02-CK Contact American Elements
(3N) 99.9% Silicon Chunk SI-M-03-CK Contact American Elements
(4N) 99.99% Silicon Chunk SI-M-04-CK Contact American Elements
(5N) 99.999% Silicon Chunk SI-M-05-CK Contact American Elements

CHEMICAL
IDENTIFIER
Formula CAS No. PubChem SID PubChem CID MDL No. EC No Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
Si 7440-21-3 24882537 5461123 MFCD00085311 231-130-8 N/A [SiH4] InChI=1S/Si XUIMIQQOPSSXEZ-UHFFFAOYSA-N

PROPERTIES Mol. Wt. Appearance Density Tensile Strength Melting Point Boiling Point Thermal Conductivity Electrical Resistivity Eletronegativity Specific Heat Heat of Vaporization Heat of Fusion MSDS
28.08 Silvery 2330 kg/m³ N/A 1414 °C 2900 °C 1.49 W/cm/K @ 298.2 K 3-4 microhm-cm @ 0°C 1.8 Paulings 0.168 Cal/g/K @ 25°C 40.6 K-Cal/gm atom at 2355 °C 9.47 Cal/gm mole Safety Data Sheet

High Purity ChunkAmerican Elements specializes in producing high purity Silicon Chunk using crystallization, solid state and other ultra high purification processes such as sublimation. Standard Chunk pieces are amorphous uniform pieces ranging in size from 5-15 mm. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into granules, rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics. We also produce Silicon as rod, pellets, powder, pieces, disc, ingot, wire, and in compound forms, such as oxide. Other shapes are available by request.

Silicon (Si) atomic and molecular weight, atomic number and elemental symbolSilicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy Ferrosilicon.Elemental Silicon Silica (or silicon oxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word "silex" which means flint or hard stone. For more information on silicon, including properties, safety data, research, and American Elements' catalog of silicon products, visit the Silicon Information Center.

HEALTH, SAFETY & TRANSPORTATION INFORMATION
Warning
H228
F
11
16-33-36
VW0400000
UN 1346 4.1/PG 3
2
Flame-Flammables        

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PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


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Production Catalog Available in 36 Countries & Languages


Recent Research & Development for Silicon

  • Wei Sun, Renzong Hu, Hui Liu, Meiqin Zeng, Lichun Yang, Haihui Wang, Min Zhu, Embedding nano-silicon in graphene nanosheets by plasma assisted milling for high capacity anode materials in lithium ion batteries, Journal of Power Sources, Volume 268, 5 December 2014
  • Hiroyuki Usui, Kazuma Nouno, Yuya Takemoto, Kengo Nakada, Akira Ishii, Hiroki Sakaguchi, Influence of mechanical grinding on lithium insertion and extraction properties of iron silicide/silicon composites, Journal of Power Sources, Volume 268, 5 December 2014
  • Liguo Wang, Fengyou Wang, Xiaodan Zhang, Ning Wang, Yuanjian Jiang, Qiuyan Hao, Ying Zhao, Improving efficiency of silicon heterojunction solar cells by surface texturing of silicon wafers using tetramethylammonium hydroxide, Journal of Power Sources, Volume 268, 5 December 2014
  • Xiao-Qing Bao, Lifeng Liu, Improved photo-stability of silicon nanobelt arrays by atomic layer deposition for efficient photocatalytic hydrogen evolution, Journal of Power Sources, Volume 268, 5 December 2014
  • T. Koyanagi, K. Shimoda, S. Kondo, T. Hinoki, K. Ozawa, Y. Katoh, Irradiation creep of nano-powder sintered silicon carbide at low neutron fluences, Journal of Nuclear Materials, Volume 455, Issues 1–3, December 2014
  • Daxi Guo, Hang Zang, Peng Zhang, Jianqi Xi, Tao Li, Li Ma, Chaohui He, Analysis of primary damage in silicon carbide under fusion and fission neutron spectra, Journal of Nuclear Materials, Volume 455, Issues 1–3, December 2014
  • Bo Liang, Yanping Liu, Yunhua Xu, Silicon-based materials as high capacity anodes for next generation lithium ion batteries, Journal of Power Sources, Volume 267, 1 December 2014
  • Chan Soon Kang, Seoung-Bum Son, Ji Woo Kim, Seul Cham Kim, Yong Seok Choi, Jae Young Heo, Soon-Sung Suh, Young-Ugk Kim, Yeon Yi Chu, Jong Soo Cho, Se-Hee Lee, Kyu Hwan Oh, Electrochemically induced and orientation dependent crack propagation in single crystal silicon, Journal of Power Sources, Volume 267, 1 December 2014
  • Seunghun Jang, Moonsup Han, RF power control for fabricating amorphous silicon nitride without Si-nanocrystals and its effect on defects and luminescence, Journal of Alloys and Compounds, Volume 614, 25 November 2014
  • Ryota Yanagisawa, Hisayuki Endo, Masafumi Unno, Hideyuki Morimoto, Shin-ichi Tobishima, Effects of organic silicon compounds as additives on charge–discharge cycling efficiencies of lithium in nonaqueous electrolytes for rechargeable lithium cells, Journal of Power Sources, Volume 266, 15 November 2014
  • Vivek Raj Shrestha, Hak-Soon Lee, Yong-Geon Lee, Sang-Shin Lee, Silicon nitride waveguide router enabling directional power transmission, Optics Communications, Volume 331, 15 November 2014
  • Haridas Kumarakuru, Zelalem N. Urgessa, Ezra J. Olivier, Johannes R. Botha, Andre Venter, Johannes H. Neethling, Growth of ZnS-coated ZnO nanorod arrays on (1 0 0) silicon substrate by two-step chemical synthesis, Journal of Alloys and Compounds, Volume 612, 5 November 2014
  • Dong-Joo Kim, Gil-Sung Kim, No-Won Park, Won-Yong Lee, Yumin Sim, Keun-Soo Kim, Maeng-Je Seong, Jung-Hyuk Koh, Chang-Hee Hong, Sang-Kwon Lee, Effect of annealing of graphene layer on electrical transport and degradation of Au/graphene/n-type silicon Schottky diodes, Journal of Alloys and Compounds, Volume 612, 5 November 2014
  • Yong Seok Choi, Matt Pharr, Chan Soon Kang, Seoung-Bum Son, Seul Cham Kim, Kee-Bum Kim, Hyunchul Roh, Se-Hee Lee, Kyu Hwan Oh, Joost J. Vlassak, Microstructural evolution induced by micro-cracking during fast lithiation of single-crystalline silicon, Journal of Power Sources, Volume 265, 1 November 2014
  • Myeongjin Kim, Youngjae Yoo, Jooheon Kim, Synthesis of microsphere silicon carbide/nanoneedle manganese oxide composites and their electrochemical properties as supercapacitors, Journal of Power Sources, Volume 265, 1 November 2014
  • Habib Hamidinezhad, Ali Akbar Ashkarran, Zulkurnain Abdul-Malek, Vertically-tapered silicon nanowire arrays prepared by plasma enhanced chemical vapor deposition: Synthesis, structural characterization and photoluminescence, Materials Science in Semiconductor Processing, Volume 27, November 2014
  • Wenhao Chen, Xiaomei Liu, Miao Li, Chuanqiang Yin, Lang Zhou, On the nature and removal of saw marks on diamond wire sawn multicrystalline silicon wafers, Materials Science in Semiconductor Processing, Volume 27, November 2014
  • Grzegorz Wielgoszewski, Grzegorz Józwiak, Michal Babij, Tomasz Baraniecki, Robert Geer, Teodor Gotszalk, Investigation of thermal effects in through-silicon vias using scanning thermal microscopy, Micron, Volume 66, November 2014
  • Guofang Fan, Yuan Li, Chunguang Hu, Lihua Lei, Dong Zhao, Hongyu Li, Zhen Zhen, A novel concept of acousto-optic ring frequency shifters on silicon-on-insulator technology, Optics & Laser Technology, Volume 63, November 2014
  • Liang Cao, Abdelsalam Aboketaf, Zihao Wang, Stefan Preble, Hybrid amorphous silicon (a-Si:H)–LiNbO3 electro-optic modulator, Optics Communications, Volume 330, 1 November 2014