Silicon Chunk

High Purity Si Chunk
CAS 7440-21-3

Product	Product Code	Order or Specifications
(2N) 99% Silicon Chunk	SI-M-02-CK
(3N) 99.9% Silicon Chunk	SI-M-03-CK
(4N) 99.99% Silicon Chunk	SI-M-04-CK
(5N) 99.999% Silicon Chunk	SI-M-05-CK

American Elements specializes in producing high purity Silicon Chunk using crystallization, solid state and other ultra high purification processes such as sublimation. Standard Chunk pieces are amorphous uniform pieces ranging in size from 5-15 mm. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into granules, rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics. See research below. We also produce Silicon as rod, pellets, powder, pieces, disc, ingot, wire, and in compound forms, such as oxide. Other shapes are available by request.

Silicon is a Block P, Group 14, Period 3 element. The number of electrons in each of Silicon's shells is 2, 8, 4 and its electronic configuration is [Ne] 3s² 3p². In its elemental form silicon's CAS number is 7440-21-3. The silicon atom has a radius of 117.6.pm and its Van der Waals radius is 210.pm. Silicon is not toxic but can cause chronic respiratory problems if inhaled as a fine silica or silicate dust. Asbestos silicates are carcinogenic. Silicon is makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Silica, as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Silicon is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Ultra high purity silicon can be doped with boron, gallium, phosphorus , or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics and space-age industries. Hydrogenated amorphous silicon has shown promise in producing economical cells for converting solar energy into electricity; in 2013, silicon nanoparticles created by scientists at the University of Buffalo successfully demonstrated the release of hydrogen, furthering the advancement of green energy technologies. Silcones are important products of silicon. They range from liquids to hard, glasslike solids with many useful properties. Silicon, first discovered by Jons Berzelius in 1823, is rarely found in pure crystal form and is usually produced from the iron-silicon alloy Ferrosilicon. The name Silicon originates from the Latin word "silex" which means flint or hard stone. See Silicon research below.

HEALTH, SAFETY & TRANSPORTATION INFORMATION
Material Safety Data Sheet	MSDS
Signal Word	Warning
Hazard Statements	H228
Hazard Codes	F
Risk Codes	11
Safety Precautions	16-33-36
RTECS Number	VW0400000
Transport Information	UN 1346 4.1/PG 3
WGK Germany	2
Globally Harmonized System of Classification and Labelling (GHS)

Production Catalog Available in 36 Countries & Languages

Recent Research & Development for Silicon

• Lorentzian-like image blur of gold nanoparticles on thick amorphous silicon films in ultra-high-voltage transmission electron microscopy. Oshima Y, Nishi R, Asayama K, Arakawa K, Yoshida K, Sakata T, Taguchi E, Yasuda H. Microscopy (Oxf). 2013 May 14. [Epub ahead of print]
• Nanopore-type black silicon anti-reflection layers fabricated by a one-step silver-assisted chemical etching. Lu YT, Barron AR. Phys Chem Chem Phys. 2013 May 16. [Epub ahead of print]
• Electron-ion coupling effects on radiation damage in cubic silicon carbide. Zhang C, Mao F, Zhang FS. J Phys Condens Matter. 2013 May 16;25(23):235402. [Epub ahead of print]
• Fluorescence quenching in luminescent porous silicon nanoparticles for the detection of intracellular Cu²⁺ Xia B, Zhang W, Shi J, Xiao S. Analyst. 2013 May 16. [Epub ahead of print]
• Realization of high performance silicon nanowire based solar cells with large size. Lin XX, Hua X, Huang ZG, Shen WZ. Nanotechnology. 2013 May 15;24(23):235402. [Epub ahead of print]
• Generation of high photocurrent in three-dimensional silicon quantum dot superlattice fabricated by combining bio-template and neutral beam etching for quantum dot solar cells. Igarashi M, Hu W, Rahman MM, Usami N, Samukawa S. Nanoscale Res Lett. 2013 May 15;8(1):228. [Epub ahead of print]
• Si isotopic structure of the infrared absorption of the fully hydrogenated vacancy in silicon. Clerjaud B, Pajot B. J Chem Phys. 2013 May 14;138(18):184505. doi: 10.1063/1.4803547.
• Direct imaging of 3D atomic-scale dopant-defect clustering processes in ion-implanted silicon. Koelling S, Richard O, Bender H, Uematsu M, Schulze A, Zschaetzsch G, Gilbert M, Vandervorst W. Nano Lett. 2013 May 15. [Epub ahead of print]
• Precision synthesis of silicon nanowires with crystalline core and amorphous shell. Bogart TD, Lu X, Korgel BA. Dalton Trans. 2013 May 15. [Epub ahead of print]
• Stability and electronic properties of ultrathin films of silicon and germanium. Kaltsas D, Tsetseris L. Phys Chem Chem Phys. 2013 May 14. [Epub ahead of print]
• Casimir forces on a silicon micromechanical chip. Zou J, Marcet Z, Rodriguez AW, Reid MT, McCauley AP, Kravchenko II, Lu T, Bao Y, Johnson SG, Chan HB. Nat Commun. 2013;4:1845. doi: 10.1038/ncomms2842.
• Permanent fine tuning of silicon microring devices by femtosecond laser surface amorphization and ablation. Bachman D, Chen Z, Fedosejevs R, Tsui YY, Van V. Opt Express. 2013 May 6;21(9):11048-56. doi: 10.1364/OE.21.011048.
• Optical bistability in a silicon nitride microring resonator with azo dye-doped liquid crystal as cladding material. Wang CT, Tseng CW, Yu JH, Li YC, Lee CH, Jau HC, Lee MC, Chen YJ, Lin TH. Opt Express. 2013 May 6;21(9):10989-94. doi: 10.1364/OE.21.010989.
• Efficient perfectly vertical fiber-to-chip grating coupler for silicon horizontal multiple slot waveguides. Covey J, Chen RT. Opt Express. 2013 May 6;21(9):10886-96. doi: 10.1364/OE.21.010886.
• Ultra-compact silicon photonic devices reconfigured by an optically induced semiconductor-to-metal transition. Ryckman JD, Hallman KA, Marvel RE, Haglund RF, Weiss SM. Opt Express. 2013 May 6;21(9):10753-63. doi: 10.1364/OE.21.010753.
• Actively Q-switched, thulium-holmium-codoped fiber laser incorporating a silicon-based, variable-optical-attenuator-based Q switch. Jung M, Han Lee J. Appl Opt. 2013 Apr 20;52(12):2706-10. doi: 10.1364/AO.52.002706.
• Surface Modification of Silicon Oxide with Trialkoxysilanes toward Close-Packed Monolayer Formation. Tanaka M, Sawaguchi T, Kuwahara M, Niwa O. Langmuir. 2013 May 13. [Epub ahead of print]
• A review on electronic and optical properties of silicon nanowire and its different growth techniques. Hasan M, Huq MF, Mahmood ZH. Springerplus. 2013 Apr 10;2(1):151. Print 2013 Dec.
• Silicon photomultipliers for improved detection of low light levels in miniature near-infrared spectroscopy instruments. Zimmermann R, Braun F, Achtnich T, Lambercy O, Gassert R, Wolf M. Biomed Opt Express. 2013 Apr 3;4(5):659-66. doi: 10.1364/BOE.4.000659. Print 2013 May 1.
• The Stoichiometry of Electroless Silicon Etching in Solutions of V₂ O₅ and HF. Kolasinski KW, Barclay WB. Angew Chem Int Ed Engl. 2013 May 10. doi: 10.1002/anie.201300755. [Epub ahead of print]

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