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Germanium Nitride Sputtering Target

CAS #:

Linear Formula:

Ge3N4

MDL Number:

MFCD00016118

EC No.:

235-064-0

ORDER

PRODUCT Product Code ORDER SAFETY DATA TECHNICAL DATA
(2N) 99% Germanium Nitride Sputtering Target
GE3-N-02-ST
Pricing > SDS > Data Sheet >
(3N) 99.9% Germanium Nitride Sputtering Target
GE3-N-03-ST
Pricing > SDS > Data Sheet >
(4N) 99.99% Germanium Nitride Sputtering Target
GE3-N-04-ST
Pricing > SDS > Data Sheet >
(5N) 99.999% Germanium Nitride Sputtering Target
GE3-N-05-ST
Pricing > SDS > Data Sheet >

Germanium Nitride Sputtering Target Properties (Theoretical)

Compound Formula Ge3N4
Molecular Weight 273.95
Appearance Target
Melting Point N/A
Boiling Point N/A
Density 5.35 g/cm3
Solubility in H2O N/A
Exact Mass 271.779797
Monoisotopic Mass 271.779797

Germanium Nitride Sputtering Target Health & Safety Information

Signal Word Warning
Hazard Statements H315-H319-H335
Hazard Codes Xi
Risk Codes 36/37/38
Safety Statements 26-36
RTECS Number N/A
Transport Information N/A
WGK Germany 3
MSDS / SDS

About Germanium Nitride Sputtering Target

American Elements specializes in producing high purity Germanium Nitride Sputtering Targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. Please contact us for information on lead time and pricing above.

Germanium Nitride Sputtering Target Synonyms

N/A

Chemical Identifiers

Linear Formula Ge3N4
MDL Number MFCD00016118
EC No. 235-064-0
Beilstein Registry No. N/A
Pubchem CID 16684757
IUPAC Name N/A
SMILES N#[Ge]N([Ge]#N)[Ge]#N
InchI Identifier InChI=1S/Ge3N4/c4-1-7(2-5)3-6
InchI Key BIXHRBFZLLFBFL-UHFFFAOYSA-N

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Payment Methods

American Elements accepts checks, wire transfers, ACH, most major credit and debit cards (Visa, MasterCard, AMEX, Discover) and Paypal.

For the convenience of our international customers, American Elements offers the following additional payment methods:

SOFORT bank tranfer payment for Austria, Belgium, Germany and SwitzerlandJCB cards for Japan and WorldwideBoleto Bancario for BraziliDeal payments for the Netherlands, Germany, Austria, Belgium, Italy, Poland, Spain, Switzerland, and the United KingdomGiroPay for GermanyDankort cards for DenmarkElo cards for BrazileNETS for SingaporeCartaSi for ItalyCarte-Bleue cards for FranceChina UnionPayHipercard cards for BrazilTROY cards for TurkeyBC cards for South KoreaRuPay for India

Related Elements

See more Germanium products. Germanium (atomic symbol: Ge, atomic number: 32) is a Block P, Group 14, Period 4 element with an atomic weight of 72.63. Germanium Bohr ModelThe number of electrons in each of germanium's shells is 2, 8, 18, 4 and its electron configuration is [Ar] 3d10 4s2 4p2. The germanium atom has a radius of 122.5 pm and a Van der Waals radius of 211 pm. Germanium was first discovered by Clemens Winkler in 1886. In its elemental form, germanium is a brittle grayish white semi-metallic element. Germanium is too reactive to be found naturally on Earth in its native state. High Purity (99.999%) Germanium (Ge) MetalIt is commercially obtained from zinc ores and certain coals. It is also found in argyrodite and germanite. It is used extensively as a semiconductor in transitors, solar cells, and optical materials. Other applications include acting an alloying agent, as a phosphor in fluorescent lamps, and as a catalyst. The name Germanium originates from the Latin word "Germania" meaning "Germany," For more information on germanium, including properties, safety data, research, and American Elements' catalog of germanium products, visit the Germanium element page.

See more Nitrogen products. Nitrogen is a Block P, Group 15, Period 2 element. Its electron configuration is [He]2s22p3. Nitrogen is an odorless, tasteless, colorless and mostly inert gas. It is the seventh most abundant element in the universe and it constitutes 78.09% (by volume) of Earth's atmosphere. Nitrogen was discovered by Daniel Rutherford in 1772.

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November 20, 2019
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