Re-distribution of oxygen at the interface between ?-Al2O3 and TiN.

Title Re-distribution of oxygen at the interface between ?-Al2O3 and TiN.
Authors E.O. Filatova; A.S. Konashuk; S.S. Sakhonenkov; A.A. Sokolov; V.V. Afanas'ev
Journal Sci Rep
DOI 10.1038/s41598-017-04804-4

Interface of TiN electrode with ?-Al2O3 layers was studied using near edge X-ray absorption fine structure, conventional X-ray photoelectron spectroscopy and photoelectron spectroscopy with high energies. Despite the atomic-layer deposited Al2O3 being converted into thermodynamically-stable polycrystalline cubic ?-phase by high-temperature (1000 or 1100?°C) anneal, our results reveal formation of a thin TiNxOy (?1-nm thick) interlayer at the interface between ?-Al2O3 film and TiN electrode due to oxygen scavenging from ?-Al2O3 film. Formation of the TiO2 was not observed at this interface. As environmental effect, a strong oxidation resulting in formation of a TiO2(1.4?nm)/TiNxOy(0.9?nm) overlayers on the top of the TiN electrode is traced. Development of O-deficiency of ?-Al2O3 is observed and related to the polarization anisotropy due to the preferential orientation of spin states involved in the X-ray absorption in the plane parallel to the surface. Investigation of the TiN electrode reveals the predominantly "stretched" octahedra in its structure with the preferential orientation relative the interface with ?-Al2O3. This anisotropy can be correlated with ?200?meV electron barrier height increase at the O-deficient TiN/?-Al2O3 interface as compared to the TiN/?-Al2O3 barrier formed under abundant oxidant supply condition as revealed by internal photoemission of electrons from TiN into the oxide.

Citation E.O. Filatova; A.S. Konashuk; S.S. Sakhonenkov; A.A. Sokolov; V.V. Afanas'ev.Re-distribution of oxygen at the interface between ?-Al2O3 and TiN.. Sci Rep. 2017;7(1):4541. doi:10.1038/s41598-017-04804-4

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