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ARSENIDE INFORMATION CENTER
AE Arsenides ™

32.4 (A)/00.022


Hydrogen                                Helium  
Lithium Beryllium                     Boron Carbon Nitrogen Oxygen Fluorine Neon
Sodium Magnesium                     Aluminum Silicon Phosphorus Sulfur Chlorine Argon
Potassium Calcium Scandium Titanium Vanadium Chromium Manganese Iron Cobalt Nickel Copper Zinc Gallium Germanium Arsenic Selenium Bromine Krypton
Rubidium Strontium Yttrium Zirconium Niobium Molybdenum Technetium Ruthenium Rhodium Palladium Silver Cadmium Indium Tin Antimony Tellurium Iodine Xenon
Cesium Barium Lanthanum Hafnium Tantalum Tungsten Rhenium Osmium Iridium Platinum Gold Mercury Thallium Lead Bismuth Polonium Astatine Radon
Francium Radium Actinium Rutherfordium Dubnium Seaborgium Bohrium Hassium Meitnerium Darmstadtium Roentgenium Copernicium Ununtrium Ununquadium Ununpentium Ununhexium Ununseptium Ununoctium
                                   
    Cerium Praseodymium Neodymium Promethium Samarium Europium Gadolinium Terbium Dysprosium Holmium Erbium Thulium Ytterbium Lutetium    
    Thorium Protactinium Uranium Neptunium Plutonium Americium Curium Berkelium Californium Einsteinium Fermium Mendelevium Nobelium Lawerencium      

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Nickel Arsenide

An arsenide is any member of a rare mineral group consisting of compounds of one or more metals with arsenic (As). It is an anion with the charge −3. The trianion is formed by the reduction of arsenic by three electrons. For example heating arsenic powder with excess sodium gives sodium arsenide (Na3As). The anions have no existence in solution since they are extremely basic. These solid salts have very high lattice energies.

Arsenides are toxic because of the inherent toxicity of arsenic and all of its compounds. Aluminum arsenide is a semiconductor material. Gallium arsenide is an important semiconductor, and is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells, and optical windows. Quantum dots can be formed in a monolayer of indium arsenide on gallium arsenide.

Cadmium arsenide can be prepared as amorphous semiconductive glass, used in infrared detectors using Nernst effect, and in thin-film dynamic pressure sensors. It can be also used to make magnetoresistors, and in photodetectors. Cadmium arsenide can be used as a dopant for HgCdTe.

Indium arsenide is a semiconductor with the appearance of grey cubic crystals and a melting point 942 °C. Indium arsenide is used for construction of infrared detectors. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but indium arsenide detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.

Purities include 99%, 99.9%, 99.99%, 99.999% and 99.9999% which are sometimes referred to as 2N, 3N, 4N, 5N and 6N.

Physical properties may include nanopowder, nano particle, submicron, - 325 mesh, rod, foil, and high surface area bromide with particle distribution and particle size controlled and certified. We produce larger - 40 mesh, - 100 mesh, -200 mesh range sizes and < 0.5 mm, 2 mm, 5 mm and other mm size shot, granules, lump, flake and pieces, too.

American Elements maintains industrial scale production for all its arsenide products.

American Elements will execute Non-Disclosure or Confidentiality Agreements to protect customer know-how.

Please select an Arsenide Material from the table :

Aluminum Arsenide
Aluminum Gallium Arsenide
Antimony Arsenide
Barium Arsenide
Cadmium Arsenide
Cadmium(IV) Arsenide
Calcium Arsenide
Chromium Arsenide
Cobalt Arsenide CoAs
Cobalt Arsenide CoAs2
Cobalt Arsenide CoAs3
Copper Arsenide
Dysprosium Arsenide

Erbium Arsenide
Europium Arsenide
Gadolinium Arsenide
Gallium Arsenide
Gallium Indium Arsenide
Germanium Arsenide
Holmium Arsenide
Indium Arsenide
Indium Phosphide Arsenide
Iron Arsenide FeAs
Iron Arsenide Fe2As
Iron Arsenide FeAs2

Lanthanum Arsenide
Lead Arsenide
Lithium Arsenide
Lutetium Arsenide
Magnesium Arsenide
Manganese Arsenide
Neodymium Arsenide
Nickel Arsenide NiAs
Nickel Arsenide NiAs2
Niobium Arsenide
Potassium Arsenide
Praseodymium Arsenide
Samarium Arsenide

Silver Arsenide
Sodium Arsenide
Strontium Arsenide
Terbium Arsenide
Thallium Arsenide
Thulium Arsenide
Tin Arsenide
Ytterbium Arsenide
Yttrium Arsenide
Zinc Arsenide
Zinc(IV) Arsenide
Zirconium Arsenide


French Arséniure German Arsenid Italian Arseniuro Portuguese Arsenieto Spanish Arseniuro 砷化物 ヒ化物 Swedish Arsenid

 



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Recent Research & Development for Arsenide

  • Local quantum criticality of an iron-pnictide tetrahedron. Ong TT, Coleman P. Phys Rev Lett. 2012 Mar 9;108(10):107201. Epub 2012 Mar 5. PMID: 22463447 [PubMed - in process]

  • The effect of He-Ne and Ga-Al-As laser light on the healing of hard palate mucosa of mice. Fahimipour F, Mahdian M, Houshmand B, Asnaashari M, Sadrabadi AN, Farashah SE, Mousavifard SM, Khojasteh A. Lasers Med Sci. 2012 Mar 14. [Epub ahead of print] PMID: 22415572 [PubMed - as supplied by publisher]

  • Low-Level Laser Therapy Enhances the Stability of Orthodontic Mini-Implants via Bone Formation Related to BMP-2 Expression in a Rat Model. Omasa S, Motoyoshi M, Arai Y, Ejima KI, Shimizu N. Photomed Laser Surg. 2012 Mar 9. [Epub ahead of print] PMID: 22404559 [PubMed - as supplied by publisher]

  • Efficacy of low-intensity laser therapy in reducing treatment time and orthodontic pain: A clinical investigation. Doshi-Mehta G, Bhad-Patil WA. Am J Orthod Dentofacial Orthop. 2012 Mar;141(3):289-97. PMID: 22381489 [PubMed - in process]

  • Light-induced vasodilation of coronary arteries and its possible clinical implication. Plass CA, Loew HG, Podesser BK, Prusa AM. Ann Thorac Surg. 2012 Apr;93(4):1181-6. Epub 2012 Mar 3. PMID: 22381453 [PubMed - in process]

  • Wet Chemical Functionalization of III-V Semiconductor Surfaces: Alkylation of Gallium Arsenide and Gallium Nitride by a Grignard Reaction Sequence. Peczonczyk SL, Mukherjee J, Carim AI, Maldonado S. Langmuir. 2012 Mar 13;28(10):4672-82. Epub 2012 Feb 28. PMID: 22372474 [PubMed - in process]

  • Evaluation of low-level laser therapy in patients with acute and chronic temporomandibular disorders. Salmos-Brito JA, de Menezes RF, Teixeira CE, Gonzaga RK, Rodrigues BH, Braz R, Bessa-Nogueira RV, de Martínez Gerbi ME. Lasers Med Sci. 2012 Feb 25. [Epub ahead of print] PMID: 22367394 [PubMed - as supplied by publisher]

  • Effect of low-level laser therapy (LLLT) on orthodontic tooth movement. Genc G, Kocadereli I, Tasar F, Kilinc K, El S, Sarkarati B. Lasers Med Sci. 2012 Feb 18. [Epub ahead of print] PMID: 22350425 [PubMed - as supplied by publisher]

  • Cu(4.35)Cd(1.65)As(16): the first polyarsenic compound in the Cu-Cd-As system. Osters O, Nilges T. Acta Crystallogr Sect E Struct Rep Online. 2011 Nov 1;67(Pt 11):i62. Epub 2011 Oct 22. PMID: 22219727 [PubMed - in process]

  • Hole spin relaxation in Ge-Si core-shell nanowire qubits. Hu Y, Kuemmeth F, Lieber CM, Marcus CM. Nat Nanotechnol. 2011 Dec 18;7(1):47-50. doi: 10.1038/nnano.2011.234. PMID: 22179569 [PubMed - in process]

  • Analysis of optical absorption in GaAs nanowire arrays. Guo H, Wen L, Li X, Zhao Z, Wang Y. Nanoscale Res Lett. 2011 Dec 6;6:617. PMID: 22145699 [PubMed - in process]

  • GaAs 904-nm laser irradiation improves myofiber mass recovery during regeneration of skeletal muscle previously damaged by crotoxin. Silva LH, Silva MT, Gutierrez RM, Conte TC, Toledo CA, Aoki MS, Liebano RE, Miyabara EH. Lasers Med Sci. 2011 Dec 6. [Epub ahead of print] PMID: 22143119 [PubMed - as supplied by publisher]

  • Non-destructive clinical assessment of occlusal caries lesions using near-IR imaging methods. Staninec M, Douglas SM, Darling CL, Chan K, Kang H, Lee RC, Fried D. Lasers Surg Med. 2011 Dec;43(10):951-9. doi: 10.1002/lsm.21139. Epub 2011 Nov 22. PMID: 22109697 [PubMed - in process]

  • High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit. Marshall AR, Ker PJ, Krysa A, David JP, Tan CH. Opt Express. 2011 Nov 7;19(23):23341-9. doi: 10.1364/OE.19.023341. PMID: 22109211 [PubMed]

  • Effects of the combination of low-level laser irradiation and recombinant human bone morphogenetic protein-2 in bone repair. Rosa AP, de Sousa LG, Regalo SC, Issa JP, Barbosa AP, Pitol DL, de Oliveira RH, de Vasconcelos PB, Dias FJ, Chimello DT, Siéssere S. Lasers Med Sci. 2011 Nov 18. [Epub ahead of print] PMID: 22095190 [PubMed - as supplied by publisher]

  • Six-fold hexagonal symmetric nanostructures with various periodic shapes on GaAs substrates for efficient antireflection and hydrophobic properties. Leem JW, Song YM, Yu JS. Nanotechnology. 2011 Dec 2;22(48):485304. Epub 2011 Nov 9. PMID: 22071365 [PubMed]

  • Near-room-temperature mid-infrared quantum well photodetector. Hinds S, Buchanan M, Dudek R, Haffouz S, Laframboise S, Wasilewski Z, Liu HC. Adv Mater. 2011 Dec 8;23(46):5536-9. doi: 10.1002/adma.201103372. Epub 2011 Nov 3. PMID: 22052780 [PubMed - indexed for MEDLINE]

  • Effects of low-level laser therapy in combination with physiotherapy in the management of rotator cuff tendinitis. Eslamian F, Shakouri SK, Ghojazadeh M, Nobari OE, Eftekharsadat B. Lasers Med Sci. 2011 Nov 4. [Epub ahead of print] PMID: 22052627 [PubMed - as supplied by publisher]

  • High T(c) electron doped Ca10(Pt3As8)(Fe2As2)5 and Ca10(Pt4As8)(Fe2As2)5 superconductors with skutterudite intermediary layers. Ni N, Allred JM, Chan BC, Cava RJ. Proc Natl Acad Sci U S A. 2011 Nov 8;108(45):E1019-26. Epub 2011 Oct 31. PMID: 22042837 [PubMed]

  • Quantum confinement effects in nanoscale-thickness InAs membranes. Takei K, Fang H, Kumar SB, Kapadia R, Gao Q, Madsen M, Kim HS, Liu CH, Chueh YL, Plis E, Krishna S, Bechtel HA, Guo J, Javey A. Nano Lett. 2011 Nov 9;11(11):5008-12. Epub 2011 Oct 21. PMID: 22007924 [PubMed - indexed for MEDLINE]

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