DyScO3 is a crystalline solid used as a semiconductor and in photo optic applications.American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia)and follows applicable ASTM testing standards.Typical and custom packaging is available. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Like diamond, a pure carbon compound, Carbide compounds tend to be extremely hard, refractory and resistant to wear, corrosion and heat, making them excellent candidates for coatings for drills and other tools. They often have other valuable properties in combination with toughness, such as electrical conductivity, low thermal expansion and abrasiveness.

Dysprosium is a Block F, Group 3, Period 6 element. The number of electrons in each of Dysprosium's shells is 2, 8, 18, 28, 8, 2 and its electronic configuration is [Xe] 4f¹⁰ 6s². In its elemental form dysprosium's CAS number is 7429-91-6. The dysprosium atom has a radius of 175.2.pm and it's Van der Waals radius is unknown. Dysprosium is moderately toxic. Dysprosium is most commonly used in neodymium-iron-boron high strength permanent magnets. Dysprosium is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. While it has one of the highest magnetic moments of any of the rare earths (10.6µB), this has not resulted in an ability to perform on its own as a practical alternative to neodymium compositions. It is however now an essential additive in NdFeB production. It is also used in special ceramic compositions based on BaTiO formulations. Recent research has examined the use of dysprosium in dysprosium-iron-garnet (DyIG) and silicon implanted with dysprosium and holmium to form donor centers. Dysprosium is added to various advanced optical formulations due to the fact that it emits in the 470-500 and 570-600 nm wavelengths. Dysprosium was first discovered by Paul Emile Lecoq de Boisbaudran in 1886. The element name originates from the Greek word 'dysprositos' meaning hard to get at. See Dysprosium research below.

Scandium is a Block D, Group 3, Period 4 element. The number of electrons in each of Scandium's shells is 2, 8, 9, 2 and its electronic configuration is [Ar] 3d¹ 4s². In its elemental form scandium's CAS number is 7440-20-2. The scandium atom has a radius of 160.6.pm and it's Van der Waals radius is 200.pm. Scandium is mildly toxic. Scandium is a metal that has many of the characteristics of the rare earth elements, particularly yttrium. It is a light material with a higher melting point than aluminum giving uses in aerospace and most recently, in racing bicycles and golf clubs. Doping zirconium oxide with scandium oxide produces a low temperature electrolyte in solid oxide fuel cells. Scandium information, including Technical Data, Safety Data and its high purity properties, research, applications and other useful facts are discussed here. Scientific facts such as the atomic structure, ionization energy, abundance on Earth, conductivity and thermal properties are included. Scandium was first discovered by Lars Nilson in 1879. The origin of the name, Scandium, comes from the Latin word 'Scandia' meaning Scandinavia. See Scandium research below.

American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:

• Crystal "pulling" by the Czochaiski method for production of semiconductor materials
• Flux growth and gradient freeze
• Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques