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Indium Arsenide |
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Indium Arsenide is
a narrow bandgap semiconductor making it a good material for electronic devices operating at very high speed (and low power) electronics and for infrared detectors. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement. Indium is a Block P, Group 13, Period 5 element. The electronic configuration is [Kr] 4d10 5s2 5p1. In its elemental form indium's CAS number is 7440-74-6. The indium atom has a radius of 162.6.pm and it's Van der Waals radius is 193.pm. Indium has found application in semi-conductor materials and other electronic applications. It is used to make low-melting alloys, such as an alloy of 24% indium - 76% Indium is liquid at room temperature. It is used in making bearing alloys, germanium transistors, rectifiers, and photoconductors. It can be plated onto metal and evaporated onto glass, forming a mirror as good as that made with silver but with more resistance to atmospheric corrosion. Indium has found application in semi-conductor materials and other electronic applications. It is used to make low-melting alloys, such as an alloy of 24% indium - 76% Indium is liquid at room temperature. It is used in making bearing alloys, germanium transistors, rectifiers, and photoconductors. It can be plated onto metal and evaporated onto glass, forming a mirror as good as that made with silver but with more resistance to atmospheric corrosion. Arsenic is a Block P, Group 15, Period 4 element. The electronic configuration is [Ar] 3d10 4s2 4p3. In its elemental form arsenic's CAS number is 1327-53-3. The arsenic atom has a radius of 124.5.pm and it's Van der Waals radius is 185.pm. Arsenic has numerous applications as a semiconductor and other electronic applications as Indium arsenide, silicon arsenide and tin arsenidea. Arsenic is finding increasing uses as a doping agent in solid-state devices such as transistors. American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:
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