American Elements: Silicon Selenide Supplier & Tech Info

Silicon Selenide (SiSe) is a crystal grown product generally immediately available in most volumes. technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Silicon is a Block P, Group 14, Period 3 element. The electronic configuration is [Ne] 3s² 3p². In its elemental form silicon's CAS number is 7440-21-3. The silicon atom has a radius of 117.6.pm and it's Van der Waals radius is 210.pm. Silicon is one of man's most useful elements. It makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, being exceeded only by oxygen. The Czochralski process is commonly used to produce single crystals of silicon used for solid-state or semiconductor devices. Silica, as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties.

Selenium is a Block P, Group 16, Period 4 element. The electronic configuration is [Ar] 3d¹⁰ 4s² 4p⁴. In its elemental form selenium's CAS number is 7782-49-2. The selenium atom has a radius of 116.pm and it's Van der Waals radius is 190.pm. Selenium exhibits both photovoltaic action, where light is converted directly into electricity, and photoconductive action, where the electrical resistance decreases with increased illumination. These properties make selenium useful in the production of photocells and exposure meters for photographic use, as well as solar cells. Below its melting point, selenium is a p-type semiconductor and has many uses in electronic and solid-state applications.

American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:

Crystal "pulling" by the Czochaiski method for production of semiconductor materials
Flux growth and gradient freeze
Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques