Tantalum Telluride Sputtering Target
| Product | Product Code | Order or Specifications |
| (2N) 99% Tantalum Telluride Sputtering Target | TA-TE-02-ST |
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| (2N5) 99.5% Tantalum Telluride Sputtering Target | TA-TE-025-ST |
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| (3N) 99.9% Tantalum Telluride Sputtering Target | TA-TE-03-ST |
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| (3N5) 99.95% Tantalum Telluride Sputtering Target | TA-TE-035-ST |
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| (4N) 99.99% Tantalum Telluride Sputtering Target | TA-TE-04-ST |
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| (5N) 99.999% Tantalum Telluride Sputtering Target | TA-TE-05-ST |
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American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopeia/British Pharmacopeia) and follows applicable ASTM testing standards.See safety data and research below and pricing/lead time above. American Elements specializes in producing high purity Tantalum Telluride Sputtering targets with the highest possible density 
and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devises as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. We can also provide targets outside this range in addition to just about any size rectangular, annular, or oval target. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes nanoparticles. We also produce Tantalum as disc, granules, ingot, pellets, pieces, powder, and rod. Other shapes are available by request.
Tantalum is a Block D, Group 5, Period 6 element. The number of electrons in each of Tantalum's shells is 2, 8, 18, 32, 11, 2 and its electronic configuration is [Xe] 4f14 5d3 6s2. In its elemental form tantalum's CAS number is 7440-25-7. The tantalum atom has a radius of 143.pm and it's Van der Waals radius is 200.pm. Tantalum is not toxic. Tantalum has a number of interesting properties that make it particularly useful in 
electronic applications. Tantalum is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. It has the third highest melting point, surpassed only by rhenium and tungsten, yet it is highly conductive to heat and electricity. This has made it the material of choice for electronic capacitors for most 
telecommunications and hand held electronics equipment, such as cell phones, laptop computers and pagers. Tantalum compounds, such as the oxide and chloride, are the basis for di-electric coatings. Tantalum is added to glass for its high refractive index. It has various applications in nuclear energy. Due to the close relation of tantalum to niobium in the periodic table, Tantalum's name originates from the Greek word Tantalos meaning Father of Niobe in Greek mythology. See Tantalum research below. See Tantalum research below.
Tellurium is a Block P, Group 16, Period 5 element. The number of electrons in each of Tellurium's shells is 2, 8, 18, 18, 6 and its electronic configuration is [Kr] 4d10 5s2 5p4. In its elemental form tellurium's CAS number is 13494-80-9. The tellurium atom has a radius of 143.2.pm and it's Van der Waals radius is 206.pm. Tellurium is a p-type semiconductor, and shows greater conductivity in certain directions, depending on alignment of the atoms. It is grown in crystalline form with other elements such as indium telluride. Its conductivity increases slightly with exposure to light which makes many tellurides candidates for solar energyapplications. Tellurium improves the machinability of copper and stainless steel, and its addition to lead decreases the corrosive action of sulfuric acid on lead and improves its strength and hardness. 
Tellurium is used as 
a basic ingredient in blasting caps, and is added to cast iron for chill control. Tellurium is used in ceramics. Bismuth telluride has been used in thermoelectric devices. Iron is available as metal and compounds with purities from 99% to 99.999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder. Tellurium was first discovered by Franz Muller von Reichenstein in 1782. The name Tellurium originates from the Greek word 'Tellus' meaning Earth. See Tellurium research below.
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Recent Research & Development for Tantalum
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