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Magnesium Silicide Sputtering Target

CAS #: 22831-39-6
Linear Formula:
Mg2Si
MDL Number
MFCD00016202
EC No.:
245-254-5

ORDER

Product Product Code ORDER SAFETY DATA Technical data
(5N) 99.999% Magnesium Silicide Ingot MG-SID-05-I SDS > Data Sheet >
(5N) 99.999% Magnesium Silicide Lump MG-SID-05-L SDS > Data Sheet >
(5N) 99.999% Magnesium Silicide Powder MG-SID-05-P SDS > Data Sheet >
(5N) 99.999% Magnesium Silicide Sputtering Target MG-SID-05-ST SDS > Data Sheet >
(5N) 99.999% Magnesium Silicide Wafer MG-SID-05-WF SDS > Data Sheet >
WHOLESALE/SKU 0000-742-{{nid}}

Magnesium Silicide Sputtering Target Properties (Theoretical)

Compound Formula Mg2Si
Molecular Weight 76.7
Appearance solid
Melting Point N/A
Boiling Point N/A
Density 1.94 g/cm3
Solubility in H2O N/A
Exact Mass 75.94701
Monoisotopic Mass 75.94701

Magnesium Silicide Sputtering Target Health & Safety Information

Signal Word Danger
Hazard Statements H261
Hazard Codes F
Risk Codes 14/15
Safety Statements 4
RTECS Number N/A
Transport Information UN 2624 4.3/PG 2
WGK Germany 3

About Magnesium Silicide Sputtering Target

American Elements specializes in producing high purity Magnesium Silicide Sputtering Targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devises as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. We can also provide targets outside this range in addition to just about any size rectangular, annular, or oval target. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. Typical and custom packaging is available. Other shapes are available by request.

Synonyms

Dimagnesium silicide, Dimagnesium monosilicide, MgSi, Mg-Si

Chemical Identifiers

Linear Formula Mg2Si
Pubchem CID 89858
MDL Number MFCD00016202
EC No. 245-254-5
IUPAC Name N/A
Beilstein/Reaxys No. N/A
SMILES [Mg]=[Si]=[Mg]
InchI Identifier InChI=1S/2Mg.Si
InchI Key YTHCQFKNFVSQBC-UHFFFAOYSA-N
Chemical Formula
Molecular Weight
Standard InchI
Appearance
Melting Point
Boiling Point
Density

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Related Elements

Magnesium Bohr ModelSee more Magnesium products. Magnesium (atomic symbol: Mg, atomic number: 12) is a Block S, Group 2, Period 3 element with an atomic mass of 24.3050. The number of electrons in each of Magnesium's shells is [2, 8, 2] and its electron configuration is [Ne] 3s2. The magnesium atom has a radius of 160 pm and a Van der Waals radius of 173 pm. Magnesium was discovered by Joseph Black in 1775 and first isolated by Sir Humphrey Davy in 1808. Magnesium is the eighth most abundant element in the earth's crust and the fourth most common element in the earth as a whole. Elemental MagnesiumIn its elemental form, magnesium has a shiny grey metallic appearance and is an extremely reactive. It is can be found in minerals such as brucite, carnallite, dolomite, magnesite, olivine and talc. Commercially, magnesium is primarily used in the creation of strong and lightweight aluminum-magnesium alloys, which have numerous advantages in industrial applications. The name "Magnesium" originates from a Greek district in Thessaly called Magnesia.

See more Silicon products. Silicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Elemental SiliconSilica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone.