Using KrF ELA to Improve Gate-Stacked LaAlO?/ZrO? Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique.

Title Using KrF ELA to Improve Gate-Stacked LaAlO?/ZrO? Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique.
Authors C.H. Wu; K.M. Chang; Y.M. Chen; B.W. Huang; Y.X. Zhang; S.J. Wang
Journal J Nanosci Nanotechnol
DOI 10.1166/jnn.2018.14976
Abstract

Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique and KrF excimer laser annealing (ELA) were employed for the fabrication of indium gallium zinc oxide thin-film transistors (IGZO-TFTs). Device with a 150 mJ/cm2 laser annealing densities demonstrated excellent electrical characteristics with improved on/off current ratio of 4.7×107, high channel mobility of 10 cm2/V-s, and low subthreshold swing of 0.15 V/dec. The improvements are attributed to the adjustment of oxygen vacancies in the IGZO channel to an appropriate range of around 28.3% and the reduction of traps at the high-k/IGZO interface.

Citation C.H. Wu; K.M. Chang; Y.M. Chen; B.W. Huang; Y.X. Zhang; S.J. Wang.Using KrF ELA to Improve Gate-Stacked LaAlO?/ZrO? Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique.. J Nanosci Nanotechnol. 2018;18(3):19171921. doi:10.1166/jnn.2018.14976

Related Elements

Gallium

See more Gallium products. Gallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor devices for microelectronics and optics. The element name originates from the Latin word 'Gallia' referring to Gaul, the old name of France.

Indium

See more Indium products. Indium (atomic symbol: In, atomic number: 49) is a Block P, Group 13, Period 5 element with an atomic weight of 114.818. The number of electrons in each of indium's shells is [2, 8, 18, 18, 3] and its electron configuration is [Kr] 4d10 5s2 5p1. The indium atom has a radius of 162.6 pm and a Van der Waals radius of 193 pm. Indium was discovered by Ferdinand Reich and Hieronymous Theodor Richter in 1863. Indium Bohr ModelIt is a relatively rare, extremely soft metal is a lustrous silvery gray and is both malleable and easily fusible. It has similar chemical properties to Elemental Indiumgallium such as a low melting point and the ability to wet glass. Fields such as optics and microelectronics that utilize semiconductor technology have wide uses for indium, especially in the form of Indiun Tin Oxide (ITO). Thin films of Copper Indium Gallium Selenide (CIGS) are used in high-performing solar cells. Indium's name is derived from the Latin word indicum, meaning violet.

Zinc

See more Zinc products. Zinc (atomic symbol: Zn, atomic number: 30) is a Block D, Group 12, Period 4 element with an atomic weight of 65.38. The number of electrons in each of zinc's shells is 2, 8, 18, 2, and its electron configuration is [Ar] 3d10 4s2. Zinc Bohr ModelThe zinc atom has a radius of 134 pm and a Van der Waals radius of 210 pm. Zinc was discovered by Indian metallurgists prior to 1000 BC and first recognized as a unique element by Rasaratna Samuccaya in 800. Zinc was first isolated by Andreas Marggraf in 1746. In its elemental form, zinc has a silver-gray appearance. It is brittle at ordinary temperatures but malleable at 100 °C to 150 °C.Elemental Zinc It is a fair conductor of electricity, and burns in air at high red producing white clouds of the oxide. Zinc is mined from sulfidic ore deposits. It is the 24th most abundant element in the earth's crust and the fourth most common metal in use (after iron, aluminum, and copper). The name zinc originates from the German word "zin," meaning tin.

Related Forms & Applications