American Elements: Lanthanum Aluminum Oxide Supplier & Tech Info

LaAlO3 is a crystalline solid used as a semiconductor and in photo optic applications. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Lanthanum is a Block F, Group 3, Period 6 element. The electronic configuration is [Xe] 5d¹ 6s². In its elemental form lanthanum 's CAS number is 7439-91-0. The lanthanum atom has a radius of 187.pm and it's Van der Waals radius is 200.pm. Lanthanum is one of the products manufactured and distributed under the tradename AE Rare Earths.

Aluminum is a Block P, Group 13, Period 3 element. The electronic configuration is [Ne] 3s² 3p¹. In its elemental form aluminum's CAS number is 7429-90-5. The aluminum atom has a radius of 143.2.pm and it's Van der Waals radius is 200.pm. Aluminum is a silvery-white metal that possesses many desirable characteristics. It is light, nonmagnetic and nonsparking. It stands second among metals in the scale of malleability, and sixth in ductility. It is extensively used in many industrial applications where a strong, light, easily constructed material is needed. Although it's electrical conductivity is only about 60% that of copper, it is used in electrical transmission lines because of its light weight. Pure aluminum is soft and lacks strength, but alloyed with small amounts of copper, magnesium, silicon, manganese, or other elements impart a variety of useful properties. These alloys are of vital importance in the construction of modern aircraft and rockets. Aluminum, evaporated in a vacuum, forms a highly reflective coating for both visible light and radiant heat. They are used to coat telescope mirrors. Aluminum is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder.

American Elements semi conducting materials are crystal structures produced from ultra high purity starting materials synthesized by our high purity production facility which includes several large electric muffle furnaces, a tube furnace for hydrogen reduction, 50 gallon glass-lined Pfaudler reactors supported by our analytical laboratory containing X-ray diffraction, SEM, AA, BET surface area, and ICP Spectrometry for trace metals analysis. See a discussion of American Elements Ultra High Purity and Analytical capabilities. See Crystal Growth for processes used to fabricate semiconductor materials, which include:

Crystal "pulling" by the Czochaiski method for production of semiconductor materials

Flux growth and gradient freeze

Directional solidification of fluorites using both the Bridgman-Stockbarger and float zoning techniques