Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method.

Author(s) Chen, K.H.; Kao, M.C.; Huang, S.J.; Li, J.Z.
Journal Materials (Basel)
Date Published 2017 Dec 12
Abstract

Bipolar resistive switching properties and endurance switching behavior of the neodymium oxide (Nd₂O₃) thin films resistive random access memory (RRAM) devices for a high resistive status/low resistive status (HRS/LRS) using a low temperature supercritical carbon dioxide fluid (SCF) improvement post-treatment process were investigated. Electrical and physical properties improvement of Nd₂O₃ thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and current versus voltage (I-V) measurement. The metal-like behavior of ohmic conduction mechanism and metallic cluster reaction of hopping conduction mechanism in initial metallic filament path forming process of the SCF-treated thin films RRAM devices was assumed and discussed. Finally, the electrical conduction mechanism of the thin films RRAM derives for set/reset was also discussed and verified in filament path physical model.

DOI 10.3390/ma10121415
ISSN 1996-1944
Citation Chen K-, Kao M-, Huang S-, Li J-. Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method. Materials (Basel). 2017;10(12).

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