Broadband Perfect Absorber with Monolayer MoS2 and Hexagonal Titanium Nitride Nano-disk Array.

Author(s) Huo, D.; Zhang, J.; Wang, H.; Ren, X.; Wang, C.; Su, H.; Zhao, H.
Journal Nanoscale Res Lett
Date Published 2017 Dec
Abstract

A broadband metamaterial absorber (MA) composed of hexagonal-arranged single-sized titanium nitride (TiN) nano-disk array and monolayer molybdenum disulfide (MoS2) is studied using finite-difference time-domain (FDTD) simulations. The structure of TiN nano-disk array/dielectric silica (SiO2)/aluminum (Al) is adopted in our design. By optimizing the dimension parameters of the structure, an average absorption of 96.1% is achieved from 400 to 850 nm. In addition, by inserting a monolayer MoS2 which has high absorption at the short wavelength side underneath the TiN nano-disk array, an average absorption of 98.1% over the entire visible regime from 400 to 850 nm was achieved, with a peak absorption near 100% and absorption over 99% from 475 to 772 nm. Moreover, the absorber presented in this paper is polarization insensitive. This compact and unique design with TiN nano-disk/monolayer MoS2/ SiO2/Al structure may have great potential for applications in photovoltaics and light trapping.

DOI 10.1186/s11671-017-2232-4
ISSN 1931-7573
Citation Huo D, Zhang J, Wang H, Ren X, Wang C, Su H, et al. Broadband Perfect Absorber with Monolayer MoS2 and Hexagonal Titanium Nitride Nano-disk Array. Nanoscale Res Lett. 2017;12(1):465.

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