Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor.

Author(s) Jeong, Y.; Kang, I.Man; Cho, S.; Park, J.; Shin, H.
Journal J Nanosci Nanotechnol
Date Published 2020 Aug 01
Abstract

In this study, we propose an accurate and simple current-voltage model for an SOI-JLFET based on a solution of the Poisson equation. The model is divided into three regions: accumulation, accumulation-depletion, and depletion. The charge density in each region is calculated with the Poisson equation and region-specific boundary conditions, and then the current is obtained by integrating the charge density with consideration of the effect. The proposed model, which was implemented in HSPICE using Verilog-A, was validated using TCAD simulation for various physical conditions such as SOI channel thickness, gate oxide thickness, and channel doping concentration type. According to simulation results by the error rate calculation, our model shows more than 90% accuracy.

DOI 10.1166/jnn.2020.17795
ISSN 1533-4899
Citation Jeong Y, Kang IM, Cho S, Park J, Shin H. Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor. J Nanosci Nanotechnol. 2020;20(8):4920-4925.