Direct Observation of Semiconductor-Metal Phase Transition in Bilayer Tungsten Diselenide Induced by Potassium Surface Functionalization.

Author(s) Lei, B.; Pan, Y.; Hu, Z.; Zhang, J.; Xiang, D.; Zheng, Y.; Guo, R.; Han, C.; Wang, L.; Lu, J.; Yang, L.; Chen, W.
Journal ACS Nano
Date Published 2018 Jan 25
Abstract

Structures determine properties of materials and controllable phase transitions are, therefore, highly desirable for exploring exotic physics and fabricating devices. We report a direct observation of a controllable semiconductor-metal phase transition in bilayer tungsten diselenide (WSe2) with potassium (K) surface functionalization. Through the integration of in-situ field-effect-transistor (FET), X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy measurements and first-principles calculations, we identify that the electron doping from K adatoms drives bilayer WSe2 from a 2H-phase semiconductor to a 1T'-phase metal. The phase-transition mechanism is satisfactorily explained by the electronic structures and energy alignment of the 2H and 1T' phases. This explanation can be generally applied to understand doping induced phase transitions in two-dimensional (2D) structures. Finally, the associated dramatic changes of electronic structures and electrical conductance make this controllable semiconductor-metal phase transition of interest for 2D semiconductors based electronic and optoelectronic devices.

DOI 10.1021/acsnano.8b00398
ISSN 1936-086X
Citation Lei B, Pan Y, Hu Z, Zhang J, Xiang D, Zheng Y, et al. Direct Observation of Semiconductor-Metal Phase Transition in Bilayer Tungsten Diselenide Induced by Potassium Surface Functionalization. ACS Nano. 2018.

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