Effects of the Process Parameters on the Properties of Sputter-Deposited Tin Oxide Thin Films.

Author(s) Woo, S.Woo; Seo, H.Byeol; Choi, J.; Bae, B.Seong; Yun, E.J.
Journal J Nanosci Nanotechnol
Date Published 2019 Mar 01

This study examined the effects of the oxygen partial pressure on the properties of tin oxide (SnO) thin films deposited by radio frequency magnetron sputtering using a SnO target. The properties of the samples were characterized by Hall Effect measurements, dynamic-secondary ion mass spectrometry, X-ray photoelectron spectroscopy (XPS), X-ray diffraction, and atomic force microscopy. All the samples exhibited dominant Sn XPS peaks, indicating that SnO with -type conductivity was the main composition regardless of the oxygen partial pressure. The samples deposited with an oxygen partial pressure of 12% showed the best -type characteristics, which included a maximum hole mobility of 1.94 cm²/Vs, carrier concentration of 3.83×10/cm³, Sn peak area percentage of 91.34%, Sn peak area percentage of 2.35%, and Sn peak area percentage of 6.31%. As the oxygen partial pressure was increased to more than 12%, the Sn peak area percentage decreased while the Sn peak area percentage increased. This was attributed to the reduction of the SnO phase and the growth of the SnO₂ phase in the samples due to the incorporation of more oxygen. These results are expected to contribute to the development of -type SnO-based TFTs with good performance.

DOI 10.1166/jnn.2019.16241
ISSN 1533-4880
Citation J Nanosci Nanotechnol. 2019;19(3):13011307.

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