Electrical Stability of Solution-Processed Indium Oxide Thin-Film Transistors.

Author(s) Lee, H.; Kwon, J.H.; Bae, J.H.; Park, J.; Seo, C.
Journal J Nanosci Nanotechnol
Date Published 2019 Apr 01
Abstract

We investigated the electrical stability of bottom-gate/top-contact-structured indium oxide (In₂O₃) thin-film transistors (TFTs) in atmospheric air and under vacuum. The solution-processed In₂O₃ film exhibits a nanocrystalline morphology with grain boundaries. The fabricated In₂O₃ TFTs operate in an -type enhancement mode. Over repeated TFT operation under vacuum, the TFTs exhibit a slight increase in the field-effect mobility, possibly due to multiple instances of the "trapping and release" behavior of electrons at grain boundaries. On the other hand, a decrease in the fieldeffect mobility and an increase in the hysteresis are observed as the measurement continues in atmospheric air. These results suggest that the electrical stability of solution-processed In₂O₃ TFTs is significantly affected by the electron-trapping phenomenon at crystal grain boundaries in the In₂O₃ semiconductor and the electrostatic interactions between electrons and polar water molecules.

DOI 10.1166/jnn.2019.16005
ISSN 1533-4880
Citation Lee H, Kwon J-, Bae J-, Park J, Seo C. Electrical Stability of Solution-Processed Indium Oxide Thin-Film Transistors. J Nanosci Nanotechnol. 2019;19(4):2371-2374.

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