Formation and Thermal Behaviors of Ternary Silicon Oxycarbides derived from Silsesquioxane Derivatives.

Author(s) Iwase, Y.; Fuchigami, T.; Horie, Y.; Daiko, Y.; Honda, S.; Iwamoto, Y.
Journal Materials (Basel)
Date Published 2019 May 27
Abstract

Silsesquioxane (SQ) derivatives possessing intramolecular HC = CH- groups and Si-H groups were designed as precursors for ternary silicon oxycarbide (SiOC). By using R-Si(OMe), H-Si(OEt) and (H-Si(Me))O as starting compounds, SQ derivatives of VH-SQ (R = vinyl) and St-H-SQ (R = stylyl) were successfully synthesized through the conventional sol-gel route. Simultaneous thermogravimetric and mass spectroscopic analyses up to 1000 °C revealed that in situ cross-linking via hydrosilylation and demethanation of VH-SQ suppressed the evolution of gaseous hydrocarbon species to afford amorphous SiOC having a composition close to the desired stoichiometric SiOC (x = ca. 0.3) with a high yield. The effect of carbon content on the phase separation and crystallization of the SQ-derived amorphous SiOC was studied by several spectroscopic analyses and TEM observation. The results were discussed aiming to develop a novel polymer-derived ceramics (PDCs) route for in situ formation of binary β-SiC-amorphous SiO nanocomposites with enhanced thermal and mechanical stability.

DOI 10.3390/ma12101721
ISSN 1996-1944
Citation Iwase Y, Fuchigami T, Horie Y, Daiko Y, Honda S, Iwamoto Y. Formation and Thermal Behaviors of Ternary Silicon Oxycarbides derived from Silsesquioxane Derivatives. Materials (Basel). 2019;12(10).