Author(s) Zheng, X.D.; Ren, F.; Wu, H.Y.; Qin, W.J.; Jiang, C.Z.
Journal Nanotechnology
Date Published 2018 Apr 02

Here we reported the fabrication of tungsten oxide (WO) nanowires by Arion irradiation of WOthin films followed by annealing in vacuum. The nanowire length increases with increasing irradiation fluence and with decreasing ion energy. We propose that the stress-driven diffusion of the irradiation-induced W interstitial atoms is responsible for the formation of the nanowires. Comparing to the pristine film, the fabricated nanowire film shows a 10-fold enhancement in electrical conductivity, resulting from the high-density irradiation-induced vacancies on the oxygen sublattice. The nanostructure exhibits largely enhanced surface-enhanced Raman scattering effect due to the oxygen vacancy. Thus, ion irradiation provides a powerful approach for fabricating and tailoring the surface nanostructures of semiconductors.

DOI 10.1088/1361-6528/aaac09
ISSN 1361-6528
Citation Nanotechnology. 2018;29(15):155301.

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