Author(s) Sun, L.; Zhao, M.; Wang, F.; Jiang, W.; Guo, J.; Li, J.; Dai, J.
Journal J Nanosci Nanotechnol
Date Published 2020 Apr 01

In this paper, -Ga₂O₃ nanowires were synthesized by vapor transport method at different temperatures. The as-prepared samples were analyzed for crystal structure by X-ray diffraction (XRD), transmission electron microscopy (TEM) and selected area electron diffraction (SAED), and for morphology using scanning electron microscopy (SEM). The results show that the Ga₂O₃ nanowires present a monoclinic structure, the length and diameter of the Ga₂O₃ nanowires increased with the growth temperature. A majority of the Ga₂O₃ nanowires present longitudinal twinning structures. A broad photoluminescence emission band was observed from the Ga₂O₃ nanowires at room temperature, which is caused by different kinds of vacancy defects. Our study shows an unusual twinning structure of -Ga₂O₃ nanowires, which may be helpful to understand the growth mechanism of nanowires.

DOI 10.1166/jnn.2020.17365
ISSN 1533-4899
Citation J Nanosci Nanotechnol. 2020;20(4):23952401.

Related Applications, Forms & Industries