Author(s) Pečinka, L.; Prokeš, L.; Havel, J.
Journal Rapid Commun Mass Spectrom
Date Published 2019 Feb 02

RATIONALE: Gallium-selenide thin films important for electronics and phase-change materials are prepared via pulsed laser deposition (PLD); however, there are no studies concerning the analysis of gallium-selenide clusters formed in the gas phase. Laser desorption ionisation (LDI) combined with time-of-flight mass spectrometry (TOF MS) has the high potential to generate charged Ga Se clusters, to analyse them and thus to develop new materials METHODS: LDI of Ga-Se mixtures using a pulsed laser (337 nm nitrogen) was used to generate gallium-selenide clusters. Mass spectra were recorded (in positive and negative ion mode) on a TOF mass spectrometer equipped with a quadrupole ion trap and reflectron mass analyser.

RESULTS: Ga-Se mixtures were found to be suitable for the laser ablation synthesis (LAS) of gallium selenide clusters, although their composition was strongly dependeny on the laser energy. The effect of laser energy on the stoichiometry of the generated clusters was established. In total, over 100 gallium-selenide Ga Se clusters were generated and identified from Ga-Se mixtures. LDI of Ga Se crystals showed almost the same clusters up to m/z 1000 with lower intensities, whereas no clusters from Ga Se were observed above m/z 1000.

CONCLUSIONS: A family of over 100 gallium-selenide clusters, generated and identified for the first time, shows rich and complex chemistry. Some of the clusters represent new compounds that have the potential to be used in the development of advanced materials.

DOI 10.1002/rcm.8403
ISSN 1097-0231
Citation Rapid Commun Mass Spectrom. 2019.

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