Highly durable and flexible gallium-based oxide conductive-bridging random access memory.

Author(s) Gan, K.J.; Liu, P.T.; Chien, T.C.; Ruan, D.B.; Sze, S.M.
Journal Sci Rep
Date Published 2019 Oct 02
Abstract

The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/GaO/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such as good memory window (>10), low operation voltage, high endurance (>1.4 × 10 cycles), and large retention memory window (>10). The temperature coefficient of resistance in the filament confirms that the conduction mechanism observed in the GaO layer is similar with the phenomenon of electrochemical metallization (ECM). Moreover, the performance of CBRAM device will not be impacted during the flexibility test. Considering the excellent performance of the CBRAM device fabricated by low-temperature process, it may provide a promising potential for the applications of flexible integrated electronic circuits.

DOI 10.1038/s41598-019-50816-7
ISSN 2045-2322
Citation Sci Rep. 2019;9(1):14141.

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