Improving Thermal Stability of Solution-Processed Indium Zinc Oxide Thin-Film Transistors by Praseodymium Oxide Doping.

Author(s) Li, M.; Zhang, W.; Chen, W.; Li, M.; Wu, W.; Xu, H.; Zou, J.; Tao, H.; Wang, L.; Xu, M.; Peng, J.
Journal ACS Appl Mater Interfaces
Date Published 2018 Aug 29

Praseodymium-doped indium zinc oxide (PrIZO) channel materials have been fabricated by a solution process with conventional chemical precursor. The PrIZO-based thin-film transistors (TFTs) exhibited a field-effect mobility of 10.10 cm/V s, a subthreshold swing value of 0.25 V/decade, and an I/ I ratio of 10. The as-fabricated PrIZO-TFTs showed an improved device performance against positive bias temperature stress (PBTS shift of 1.97 V for 7200 s), which was evidently better than the undoped IZO-TFTs (PBTS shift of 9.52 V). This result indicates that the organic residual (-OCH and -CH-) in metal-oxide semiconductor, which is confirmed to be a dominant effect on the performance of PBTS, can be passivated by the rare earth of praseodymium element. The residual is intended to be oxidized with a more stable ester group with the assistant of PrOx, weakening the electron-withdrawing characteristic during the thermal bias stress.

DOI 10.1021/acsami.8b07612
ISSN 1944-8252
Citation ACS Appl Mater Interfaces. 2018;10(34):2876428771.

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