Lead-free all-inorganic cesium tin iodide perovskite for filamentary and interface-type resistive switching toward environment-friendly and temperature-tolerant nonvolatile memories.

Author(s) Han, J.Su; Van Le, Q.; Choi, J.; Kim, H.; Kim, S.Gil; Hong, K.Tak; Moon, C.Woo; Kim, T.Ludvic; Kim, S.Young; Jang, H.Won
Journal ACS Appl Mater Interfaces
Date Published 2019 Jan 30

Recently, organometallic and all-inorganic halide perovskites (HPs) have become promising materials for resistive switching (RS) nonvolatile memory devices with low-power consumption, because they show current-voltage hysteresis caused by fast ion migration. However, the toxicity and environmental pollution potential of lead, a common constituent of HPs, has limited commercial applications of HP-based devices. Here, RS memory devices based on lead-free all-inorganic cesium tin iodide (CsSnI3) perovskites with temperature-tolerance are successfully fabricated. The devices exhibit reproducible and reliable bipolar RS characteristics in both Ag and Au top electrodes (TEs) with different switching mechanisms. The Ag TE devices show filamentary RS behavior with ultra-low operating voltages (< 0.15 V). In contrast, the Au TE devices have interface-type RS behavior with gradual resistance changes. This suggests that the RS characteristics are attributed to either the formation of metal filaments or the ion migration of defects in HPs under applied electric fields. These distinct mechanisms may permit the opportunity to design devices for specific purposes. This work will pave the way for lead-free all-inorganic HP-based nonvolatile memory for commercial applications of HP-based devices.

DOI 10.1021/acsami.8b15769
ISSN 1944-8252
Citation ACS Appl Mater Interfaces. 2019.

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