Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide.

Author(s) Schmucker, S.W.; Namboodiri, P.N.; Kashid, R.; Wang, X.; Hu, B.; Wyrick, J.E.; Myers, A.F.; Schumacher, J.D.; Silver, R.M.; Stewart, M.D.
Journal Phys Rev Appl
Date Published 2019
Abstract

Scanning tunneling microscopy (STM) enables the fabrication of two-dimensional -doped structures in Si with atomistic precision, with applications from tunnel field-effect transistors to qubits. The combination of a very small contact area and the restrictive thermal budget necessary to maintain the integrity of the layer make developing a robust electrical contact method a significant challenge to realizing the potential of atomically precise devices. We demonstrate a method for electrical contact using PdSi formed at the temperature of silicon overgrowth (250 °C), minimizing the diffusive impact on the layer. We use the transfer length method to show our PdSi contacts have very high yield (99.7% +0.2% -1.5%) and low resistivity (272±41Ωm) in contacting mesa-etched Si:P layers. We also present three terminal measurements of low contact resistance (<1 kΩ) to devices written by STM hydrogen depassivation lithography with similarly high yield (100% +0% -3.2%).

DOI 10.1103/PhysRevApplied.11.034071
ISSN 2331-7019
Citation Schmucker SW, Namboodiri PN, Kashid R, Wang X, Hu B, Wyrick JE, et al. Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide. Phys Rev Appl. 2019;11.

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