Manganese-Doped Copper Tin Telluride Absorber Layer-Sensitized Solar Cells.

Author(s) Sangsuriyawong, P.; Tubtimtae, A.; Vailikhit, V.; Teesetsopon, P.; Choopun, S.
Journal J Nanosci Nanotechnol
Date Published 2018 Jun 01

Manganese2+-doped copper tin telluride nanoparticles (Mn2+:Cu2SnTe3 NPs), as an absorber layer, were grown using a chemical bath deposition (CBD) technique and demonstrated for solar cell applications. The cubical structure was formed on the WO3 surface with the band gap (Eg) of Cu2SnTe3 NPs decreased from 1.80 to 1.67 eV after Mn2+ doping. The photovoltaic property at 1 sun shows the efficiency (η) of 0.276%. The η was increased with reducing sunlight intensity due to the lower carrier recombination process at an electrode and electrolyte interface, which leads to the increasing η. The highest η of 1.120% was yielded at 0.1 sun with a Jsc = 2.81 mA/cm2, a Voc = 0.148 V, a FF = 26.8%. It can be noted that this kind of material and a synthesis procedure can be feasibly further improved for a higher efficiency and more stability on an absorber layer.

DOI 10.1166/jnn.2018.15224
ISSN 1533-4880
Citation J Nanosci Nanotechnol. 2018;18(6):43434348.

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