Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication.

Author(s) Kusaka, Y.; Shirakawa, N.; Ogura, S.; Leppäniemi, J.; Sneck, A.; Alastalo, A.; Ushijima, H.; Fukuda, N.
Journal ACS Appl Mater Interfaces
Date Published 2018 Jul 25
Abstract

The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoO and a plasma-protecting layer of ZrO situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm/(V s) is demonstrated.

DOI 10.1021/acsami.8b07465
ISSN 1944-8252
Citation Kusaka Y, Shirakawa N, Ogura S, Leppäniemi J, Sneck A, Alastalo A, et al. Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication. ACS Appl Mater Interfaces. 2018;10(29):24339-24343.

Related Applications, Forms & Industries