Author(s) Ahmed, S.; Ding, X.; Chu, X.; Li, M.; Chu, D.; Ma, T.; Wu, T.; Vinu, A.; Yi, J.
Journal ACS Appl Mater Interfaces
Date Published 2020 Apr 22

Shape-controlled MoS has been grown directly on a silicon substrate, for the first time, with the use of a facile hydrothermal synthesis approach. The growth morphology is dependent on the substrate orientation. Square, hexagonal, and triangular patterns of MoS are grown on Si(100), Si(110), and Si(111), respectively. Detailed studies reveal that Mo silicide is formed at the initial stage, and the formation of silicide patterns is dictated by the different surface energies of Si(100), Si(110) and Si(111). Subsequently, shaped MoS patterns are formed following the silicide ones at the thermodynamic equilibrium. The approach for the formation of these patterns can be generalized to other 2D materials and can also be formed on a large scale by a lithography method. The work has shown a new technique to form silicide via solution processing and grow patterned 2D materials directly on silicon substrates, which may have the potential for advancing next-generation electronic devices.

DOI 10.1021/acsami.0c01222
ISSN 1944-8252
Citation ACS Appl Mater Interfaces. 2020;12(16):1885018858.

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