Solution-phase synthesized iron telluride nanostructures with controllable thermally triggered p-type to n-type transition.

Author(s) Zheng, W.; Hong, S.; Min, B.; Wu, Y.
Journal Nanoscale
Date Published 2018 Nov 15

The switchability of electrical properties has recently attracted much attention due to its potential applications in memory, sensors, and resistive switches. Here, a solution-phase synthesis of iron telluride nanostructures with reversible and reproducible switching behavior between p- and n-type conduction is demonstrated by a simple change of temperature without crystal structure changes. The transition temperature of FeTe2 to switch from p-type to n-type is strongly dependent on the original ratio of the precursors and sintering time. Further studies confirm that the switching is derived from the valence change effect and a proof-of-concept thermally triggered p-n diode has been demonstrated.

DOI 10.1039/c8nr06418k
ISSN 2040-3372
Citation Nanoscale. 2018;10(44):2066420670.

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