Thermoelectric Properties of Tin Telluride Quasi Crystal Grown by Vertical Bridgman Method.

Author(s) Chen, Y.X.; Li, F.; Li, D.; Zheng, Z.; Luo, J.; Fan, P.
Journal Materials (Basel)
Date Published 2019 Sep 16
Abstract

Tin telluride (SnTe), with the same rock salt structure and similar band structure of PbTe alloys, was developed as a good thermoelectric material. In this work, SnTe quasi crystal was grown by vertical Bridgman method, with texturing degree achieved at 0.98. Two sets of samples, perpendicular and parallel to the growth direction, were cut to investigate thermoelectric properties. As a result, a carrier concentration () of ~9.5 × 10 cm was obtained, which may have originated from fully generated Sn vacancies during the long term crystal growth. The relatively high Seebeck coefficient of ~30 VK and ~40 VK along the two directions was higher than most pristine SnTe reported in the literature, which leads to the room temperature () for SnTe_IP and SnTe_OP achieved at ~14.0 WcmK and ~7.0 WcmK, respectively. Finally, the maximum dimensionless figure of merit () values were around 0.55 at 873 K.

DOI 10.3390/ma12183001
ISSN 1996-1944
Citation Chen Y-, Li F, Li D, Zheng Z, Luo J, Fan P. Thermoelectric Properties of Tin Telluride Quasi Crystal Grown by Vertical Bridgman Method. Materials (Basel). 2019;12(18).

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